ZXMN6A08E6_06 [ZETEX]
60V N-CHANNEL ENHANCEMENT MODE MOSFET; 60V N沟道增强型MOSFET
| 型号： | ZXMN6A08E6_06 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：468K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN6A08E6
60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
R
( )
I (A)
(BR)DSS
DS(on)
D
0.080 @ V
= 10V
3.5
2.5
GS
60
0.150 @ V
= 4.5V
GS
DESCRIPTION
This new generation trench MOSFET from Zetex features a unique structure
combining the benefits of low on-resistance and fast switching, making it ideal for
high efficiency power management applications.
SOT23-6
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
APPLICATIONS
•
•
•
•
DC - DC converters
Power management functions
Disconnect switches
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN6A08E6TA
ZXMN6A08E6TC
7”
8mm
8mm
3000 units
Top View
13”
10000 units
DEVICE MARKING
•
6A8
ISSUE 4 - MAY 2006
1
ZXMN6A08E6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
60
UNIT
Drain-Source Voltage
Gate Source Voltage
V
V
V
V
A
DSS
GS
20
Continuous Drain Current V
=10V; T =25°C (b)
I
3.5
2.8
2.8
GS
A
D
V
=10V; T =70°C (b)
GS
A
V
=10V; T =25°C (a)
GS
A
Pulsed Drain Current (c)
I
I
I
16
2.6
16
A
A
A
DM
S
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
SM
Power Dissipation at T =25°C (a)
A
P
1.1
8.8
W
mW/°C
D
Linear Derating Factor
Power Dissipation at T =25°C (b)
A
P
1.7
13.6
W
mW/°C
D
Linear Derating Factor
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
113
UNIT
°C/W
°C/W
Junction to Ambient (a)
Junction to Ambient (b)
R
θJA
73
R
θJA
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tՅ 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature.
ISSUE 4 - MAY 2006
2
ZXMN6A08E6
CHARACTERISTICS
ISSUE 4 - MAY 2006
3
ZXMN6A08E6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
60
V
A
nA
V
I
=250A, V
=0V
(BR)DSS
DSS
D
GS
=60V, V =0V
I
I
0.5
V
V
I
DS
GS
GS
=Ϯ20V, V
100
=0V
GSS
DS
= V
Gate-Source Threshold Voltage
V
R
1
=250A, V
GS(th)
DS(on)
DS
=10V, I =4.8A
GS
D
Static Drain-Source On-State Resistance
(1)
0.080
0.150
V
V
⍀
⍀
GS
GS
D
=4.5V, I =4.2A
D
Forward Transconductance (1)(3)
DYNAMIC (3)
g
6.6
S
V
=15V,I =4.8A
D
fs
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
C
C
C
459
44.2
24.1
pF
pF
pF
iss
V
=40 V, V
=0V,
DS
GS
oss
rss
f=1MHz
t
t
t
t
2.6
2.1
ns
ns
ns
ns
nC
d(on)
r
V
R
=30V, I =1.5A
DD
D
Turn-Off Delay Time
Fall Time
12.3
4.6
⍀, V
=10V
d(off)
G≅6.0
GS
f
Gate Charge
Q
4.0
V
=30V,V
DS
=5V,
g
GS
ID=1.4A
Total Gate Charge
Q
Q
Q
5.8
1.4
1.9
nC
nC
nC
g
V
=30V,V
=10V,
DS
ID=1.4A
GS
Gate-Source Charge
Gate-Drain Charge
gs
gd
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
0.88
1.2
V
T =25°C, I =4A,
GS
SD
J
S
V
=0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t
19.2
30.3
ns
T =25°C, I =1.4A,
J S
rr
di/dt= 100A/µs
Q
nC
rr
NOTES
(1) Measured under pulsed conditions. Pulse width=300µs; duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 4 - MAY 2006
4
ZXMN6A08E6
TYPICAL CHARACTERISTICS
ISSUE 4 - MAY 2006
5
ZXMN6A08E6
TYPICAL CHARACTERISTICS
ISSUE 4 - MAY 2006
6
ZXMN6A08E6
PACKAGE OUTLINE
PAD LAYOUT DETAILS
b
e
2
L
E1
E
DATUM A
a
e1
D
A
A2
A1
CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES.
PACKAGE DIMENSIONS
Millimetres
Inches
Min
Millimetres
Inches
Min
DIM
DIM
Min
0.90
0.00
0.90
0.35
0.09
2.80
Max
Max
0.057
0.006
0.051
0.019
0.008
0.118
Min
2.60
1.50
0.10
Max
Max
0.118
0.069
0.002
A
A1
A2
b
1.45
0.15
1.30
0.50
0.20
3.00
0.35
0
E
E1
L
3.00
1.75
0.60
0.102
0.059
0.004
0.035
0.014
0.0035
0.110
e
0.95 REF
1.90 REF
0° 10°
0.037 REF
0.074 REF
0° 10°
C
e1
L
D
© Zetex Semiconductors plc 2006
Europe
Americas
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Corporate Headquarters
Zetex GmbH
Zetex Inc
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Streitfeldstraße 19
D-81673 München
Germany
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 4 - MAY 2006
7
相关型号：
©2020 ICPDF网 联系我们和版权申明