DMP4015SPS [DIODES]

40V P-CHANNEL ENHANCEMENT MODE MOSFET;


型号：	DMP4015SPS
厂家：	DIODES INCORPORATED
描述：	40V P-CHANNEL ENHANCEMENT MODE MOSFET
文件：	总6页 (文件大小：379K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMP4015SPS

Green

40V P-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI^®

Product Summary

Features and Benefits



100% Unclamped Inductive Switch (UIS) Test In Production

Low On-Resistance

Fast Switching Speed

Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

I_D

V_(BR)DSS

R_{DS(on) max}

T_A= +25°C

-17.0A

-14.5A

11mΩ @ V_GS= -10V

15mΩ @ V_GS= -4.5V

-40V

Description

Mechanical Data



Case: POWERDI^®5060-8

This new generation MOSFET has been designed to minimize the on-

state resistance (R_DS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram



Terminals: Finish – 100% matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

Applications



DC-DC Converters

Power management functions

Analog Switch



Weight: 0.097 grams (approximate)

Pin1

Top View

Pin Configuration

Internal Schematic

Bottom View

Top View

Ordering Information (Note 4 & 5)

Part Number

DMP4015SPS-13

DMP4015SPSQ-13

Compliance

Standard

Automotive

Case

Packaging

2,500 / Tape & Reel

POWERDI^®5060-8

Notes:

1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the

same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

Marking Information

Logo

P4015SP

YY WW

Part no.

Xth week: 01 ~ 53

Year: “09” = 2009

Year: “13” = 2013

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November 2013

DMP4015SPS

Document number: DS35518 Rev. 9 - 2

DMP4015SPS

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-40

Units

Gate-Source Voltage

±25

V_GSS

_A= +25°C

Steady

State

-8.5

-6.8

I_D

T_A= +70°C

Continuous Drain Current (Note 6) V_GS= -10V

Continuous Drain Current (Note 7) V_GS= -10V

T_A= +25°C

T_A= +70°C

T_A= +25°C

-13.0

-10.5

t<10s

Steady

State

-11.0

-8.7

T_A= +70°C

T_A= +25°C

-17.0

-13.5

t<10s

T_A= +70°C

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Maximum Body Diode Continuous Current (Note 7)

Avalanche Current (Note 8)

-100

-3.5

-22

I_DM

I_S

I_AS

E_AS

Avalanche Energy (Note 8)

242

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

1.3

Units

T_A= +25°C

Total Power Dissipation (Note 6)

P_D

R_θJA

P_D

0.8

96.4

40.6

T_A= +70°C

Steady state

t<10s

°C/W

Thermal Resistance, Junction to Ambient (Note 6)

Total Power Dissipation (Note 7)

2.1

T_A= +25°C

T_A= +70°C

Steady state

t<10s

1.4

55.0

24.0

4.15

°C/W

°C

Thermal Resistance, Junction to Ambient (Note 7)

R_θJA

Thermal Resistance, Junction to Case (Note 7)

Operating and Storage Temperature Range

R_θJC

-55 to +150

T_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

-40





µA

BV_DSS

I_DSS







-1

V_GS= 0V, I_D= -250μA

_DS= -40V, V_GS= 0V

Zero Gate Voltage Drain Current

Gate-Source Leakage

I_GSS

100

V_GS= 25V, V_DS= 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

-1.5



-2.0

-2.5

11

V_GS(th)

V_DS= V_GS, I_D= -250A

V_GS= -10V, I_D= -9.8A

Static Drain-Source On-Resistance

mΩ

R_{DS (ON)}

V_GS= -4.5V, I_D= -9.8A

Forward Transfer Admittance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

-0.7

|Y_fs|

V_SD



-1.0

V_DS= -20V, I_D= -9.8A

V_GS= 0V, I_S= -1A

4234

1036

526

C_iss

C_oss

C_rss

R_G

















V_DS= -20V, V_GS= 0V

f = 1.0MHz

Output Capacitance

Ω

Reverse Transfer Capacitance

Gate Resistance

7.77

47.5

14.2

13.5

13.2

10.0

302.7

137.9

V_DS= 0V, V_GS= 0V, f = 1.0MHz

Total Gate Charge

Q_g

V_DS= -20V, V_GS= -5V

I_D= -9.8A

Gate-Source Charge

Gate-Drain Charge

nC

Q_gs

Q_gd

t_D(on)

t_r

Turn-On Delay Time

Turn-On Rise Time

V_GS= -10V, V_DD= -20V, R_G= 6Ω,

I_D= -1A, R_L= 20Ω

Turn-Off Delay Time

t_D(off)

t_f

Turn-Off Fall Time

Notes:

6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

8. UIS in production with L = 0.1mH, TJ = +25°C

9 .Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to production testing.

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November 2013

DMP4015SPS

Document number: DS35518 Rev. 9 - 2

DMP4015SPS

-V =4.0V

-V =3.5V

-V =4.5V

-V =10V

-V =3.0V

0.5

1.5

0.5

1.5

2.5

3.5

4.5

-V_DS, DRAIN -SOURCE VOLTAGE(V)

Fig. 1 Typical Output Characteristics

-V_GS, GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

0.02

0.015

0.01

0.005

0.02

0.015

0.01

= 150C

-V = 4.5V

= 125C

= 85C

= 25C

= -55C

0.005

-I_D, DRAIN SOURCE CURRENT

-I_D, DRAIN SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

1.6

0.02

0.016

0.012

0.008

0.004

-V = 4.5V

-I = 5.0A

1.4

1.2

= 10V

0.8

0.6

= 10A

-50 -25

T_J, JUNCTION TEMPERATURE (

Fig. 6 On-Resistance Variation with Temperature

100 125 150

-50 -25

T_J, JUNCTION TEMPERATURE (

Fig. 5 On-Resistance Variation with Temperature

75 100 125 150

C)

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DMP4015SPS

Document number: DS35518 Rev. 9 - 2

DMP4015SPS

2.4

1.6

1.2

0.8

0.4

-50 -25

T_A, AMBIENT TEMPERATURE (°C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

75 100 125 150

0.2

0.4

0.6

0.8

1.2

1.4

-V_SD, SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

1000

10000

f = 1MHz

=150°C

ISS

1000

100

=125°C

=85°C

OSS

100

=25°C

RSS

0.1

-V_DS, DRAIN-SOURCE VOLTAGE(V)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Junction Capacitance

Fig. 10 Typical Drain-Source Leakage Current vs. Voltage

600

500

Starting Temperature (T ) = 25°C

400

300

200

100

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

INDUCTOR (mH)

100

120

Q_g, TOTAL GATE CHARGE (nC)

Fig. 11 Gate-Charge Characteristics

Fig. 12 Single-Pulse Avalanche Tested

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November 2013

DMP4015SPS

Document number: DS35518 Rev. 9 - 2

DMP4015SPS

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.9

(t) = r(t) * R

JA

D = 0.05

JA

= 97°C/W

JA

D = 0.02

P(pk)

0.01 _{D = 0.01}

- T = P * R (t)

A JA

D = 0.005

Duty Cycle, D = t /t

DUT mounted on FR-4 PCB with

minimum recommended pad layout

D = Single Pulse

0.001

0.01

0.1

100

1,000

t₁, PULSE DURATION TIME (s)

Fig. 13 Transient Thermal Response

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Detail A

POWERDI5060-8

Dim Min Max

0.90 1.10 1.00

0.00 0.05

0.33 0.51 0.41

O (4X)

Typ

–

b2 0.200 0.350 0.273

0.40 0.80 0.60

0.230 0.330 0.277

5.15 BSC

4.70 5.10 4.90

3.70 4.10 3.90

3.90 4.30 4.10

6.15 BSC

E1 E

O (4X)

5.60 6.00 5.80

3.28 3.68 3.48

3.99 4.39 4.19

1.27 BSC

b (8X)

e/2

0.51 0.71 0.61

b2 (4X)

0.51

–

0.51 0.71 0.61

L1 0.050 0.20 0.175

3.235 4.035 3.635

1.00 1.40 1.21

b3 (4X)

10º

6º

12º

8º

11º

7º

Θ1

All Dimensions in mm

Detail A

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November 2013

DMP4015SPS

Document number: DS35518 Rev. 9 - 2

DMP4015SPS

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions

Value (in mm)

1.270

0.660

0.820

0.610

4.100

0.755

4.420

5.610

1.270

0.600

1.020

0.295

1.825

3.810

0.180

6.610

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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November 2013

DMP4015SPS

Document number: DS35518 Rev. 9 - 2

DMP4015SPS [DIODES]

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