DMP4025LK3-13 [DIODES]
Power Field-Effect Transistor, 6.7A I(D), 40V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2;
| 型号： | DMP4025LK3-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, 6.7A I(D), 40V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP4025LK3
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Low On-Resistance
I
D max
BVDSS
RDS(on) max
TA = +25°C
(Note 6)
Fast Switching Speed
Low Input/Output Leakage
-8.6A
-7.0A
25mΩ @ VGS = -10V
45mΩ @ VGS = -4.5V
Lead-Free Finish; RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
-40V
Description
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.315 grams (approximate)
Applications
Motor control
Backlighting
DC-DC Converters
Printer equipment
TO252
Top View
Top View
Pin Out
Device symbol
Ordering Information (Note 4)
Product
Marking
P4025L
Reel size (inches)
Tape width (mm)
Quantity per reel
DMP4025LK3-13
13
16
2,500
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
= Manufacturer’s Marking
P4025L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 10 = 2010)
YYWW
P4025L
WW = Week (01 - 53)
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© Diodes Incorporated
DMP4025LK3
Document Number:35938 Rev. 3 - 2
DMP4025LK3
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
Units
-40
V
Gate-Source Voltage
VGSS
20
-8.6
-6.9
-6.7
-35
(Notes 6)
Continuous Drain Current
V
V
GS = -10V
GS = -10V
TA = +70°C (Notes 6)
(Notes 5)
ID
A
Pulsed Drain Current
(Notes 7)
IDM
IS
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
(Notes 7)
-8.6
-35
(Notes 7)
ISM
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Value
1.7
Unit
(Notes 5)
(Notes 6)
(Notes 5)
(Notes 6)
(Notes 6)
Power Dissipation
W
PD
2.78
74
Thermal Resistance, Junction to Ambient
RθJA
45
°C/W
°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
7.1
RθJC
RθJL
(Notes 8)
1.43
-55 to +150
TJ, TSTG
Notes:
5. For a device surface mounted on minimum recommended FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is surface mounted on 25mm X 25mm X 1.6mm FR4 PCB.
7. Repetitive rating on 25mm X 25mm FR4 PCB, D=0.02, pulse width 300µs – pulse width by maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
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© Diodes Incorporated
DMP4025LK3
Document Number:35938 Rev. 3 - 2
DMP4025LK3
Thermal Characteristics
1.8
100
90
Single Pulse
1.6
1.4
1.2
1
R
R
T
= 70
C/W
= r * R
JA
JA
JA(t)
(t)
80
70
60
50
40
30
20
10
- T = P * R
J
A
JA(t)
0.8
0.6
0.4
0.2
0
0
0
20
40
60
80 100 120 140 160
0.0001 0.001 0.01
0.1
1
10
100 1,000
TA, AMBIENT TEMPERATURE (C)
t1, PULSE DURATION TIME (sec)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Single Pulse Maximum Power Dissipation
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
RJA(t) = r(t) * R
D = 0.005
JA
RJA = 70°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Figure 3. Transient Thermal Resistance
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© Diodes Incorporated
DMP4025LK3
Document Number:35938 Rev. 3 - 2
DMP4025LK3
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
-40
V
BVDSS
IDSS
-1
ID = -250µA, VGS = 0V
VDS = -40V, VGS = 0V
GS = 20V, VDS = 0V
µA
nA
IGSS
100
V
ON CHARACTERISTICS
Gate Threshold Voltage
-0.8
-1.3
18
-1.8
25
45
V
VGS(th)
ID = -250µA, VDS = VGS
V
V
GS = -10V, ID = -3A
GS = -4.5V, ID = -3A
Static Drain-Source On-Resistance (Note 9)
mΩ
RDS (ON)
30
Forward Transconductance (Notes 9 & 10)
Diode Forward Voltage (Note 9)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
16.6
-0.7
S
V
gfs
VDS = -5V, ID = -3A
IS = -1A, VGS = 0V
-1
VSD
1643
179
128
6.43
14
Ciss
Coss
Crss
Rg
VDS = -20V, VGS = 0V
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -4.5V
Total Gate Charge (Note 11)
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
Qg
33.7
5.5
Qg
VDS = -20V
ID = -3A
nC
ns
Qgs
Qgd
tD(on)
tr
V
GS = -10V
7.3
6.9
14.7
53.7
30.9
V
DD = -20V, VGS = -10V
ID = -3A
tD(off)
tf
Notes:
9. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
Typical Characteristics
30
30
25
V
= -5V
T
= 150°C
DS
25
A
T
= 85°C
A
T
= 25°C
A
T
= 125°C
A
20
20
15
T
= -55°C
A
15
10
10
5
5
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
-VGS, GATE-SOURCE VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 5. Typical Transfer Characteristic
Figure 4. Typical Output Characteristic
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DMP4025LK3
Document Number:35938 Rev. 3 - 2
DMP4025LK3
0.04
0.03
0.05
0.04
V
= -10V
GS
T
= 150°C
A
T
= 125°C
= 85°C
V
= -4.5V
A
0.03
0.02
GS
T
A
0.02
0.01
0
T
= 25°C
A
V
= -10V
GS
T
= -55°C
A
0.01
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
-ID, DRAIN-SOURCE CURRENT (A)
Figure 6. Typical On-Resistance
vs. Drain Current and Gate Voltage
-ID, DRAIN CURRENT (A)
Figure 7. Typical On-Resistance
vs. Drain Current and Temperature
1.7
1.5
0.06
0.05
V
= -10V
GS
I
= -20A
D
0.04
1.3
1.1
V
= -4.5V
GS
I
= -10A
D
V
= -4.5V
0.03
0.02
0.01
0
GS
I
= -10A
D
0.9
V
= -10V
GS
I
= -20A
D
0.7
0.5
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Figure 8. On-Resistance Variation with Temperature
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 9. On-Resistance Variation with Temperature
2.0
1.5
20
18
16
T
= 25°C
14
12
A
I
= -1mA
D
1.0
10
8
I
= -250µA
D
6
0.5
0
4
2
0
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Figure 10. Gate Threshold Variation vs. Ambient Temperature
50
75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 11. Diode Forward Voltage vs. Current
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© Diodes Incorporated
DMP4025LK3
Document Number:35938 Rev. 3 - 2
DMP4025LK3
10,000
1,000
10,000
1,000
T
T
= 150°C
= 125°C
A
C
C
iss
A
100
oss
T
= 85°C
C
A
100
10
rss
10
1
T
= 25°C
A
0
5
10
15
20
25
30
35 40
0
5
10
15
20
25
30
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13. Typical Leakage Current
vs. Drain-Source Voltage
Figure 12. Typical Total Capacitance
10
8
100
10
R
DS(on)
Limited
V
= -20V
DS
I
= -12A
D
DC
6
4
2
P
= 10s
P
1
W
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
0.1
TJ(max) = 150°C
TA = +25°C
VGS = 10V
P
= 100µs
W
Single Pulse
DUT on 1 * MRP Board
0
0
0.01
5
10
15
20
25
30
35
40
0.1
1
10
100
Qg, TOTAL GATE CHARGE (nC)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 14. Gate-Charge Characteristics
Figure 15. SOA, Safe Operation Area
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© Diodes Incorporated
DMP4025LK3
Document Number:35938 Rev. 3 - 2
DMP4025LK3
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
TO252
Dim Min Max Typ
2.19 2.39 2.29
E
b3
A
c2
A
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
L3
D
b
0.64 0.88 0.783
E1
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531
A2
H
D
6.00 6.20 6.10
D1 5.21
e
2.286
L4
A1
E
6.45 6.70 6.58
E1 4.32
L
H
L
9.40 10.41 9.91
1.40 1.78 1.59
e
3X b
2X b2
a
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
a
0°
10°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2
Dimensions
Value (in mm)
Z
11.6
1.5
7.0
2.5
7.0
6.9
2.3
Y2
X1
X2
Y1
Y2
C
Z
C
Y1
E1
X1
E1
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DMP4025LK3
Document Number:35938 Rev. 3 - 2
DMP4025LK3
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
DMP4025LK3
Document Number:35938 Rev. 3 - 2
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