DMP4025LSD-13 [DIODES]
Small Signal Field-Effect Transistor, 5.8A I(D), 40V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8;
| 型号： | DMP4025LSD-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 5.8A I(D), 40V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
DMP4025LSD
40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
ID max (A)
Low RDS(on) – Minimizes conduction losses
V(BR)DSS
RDS(on) max
T
A = +25C
-7.6
Fast switching speed – Minimizes switching losses
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
25m @ VGS = -10V
45m @ VGS = -4.5V
-40V
-6.0
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Applications
Motor Control
Backlighting
DC-DC Converters
Printer Equipment
SO-8
Top View
Pin-Out
Top View
Device symbol
Ordering Information (Notes 4 & 5)
Part Number
DMP4025LSD-13
DMP4025LSDQ-13
Compliance
Standard
Case
SO-8
SO-8
Packaging
2500 / Tape & Reel
2500 / Tape & Reel
Automotive
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
Marking Information
= Manufacturer’s Marking
P4025LD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 10 = 2010)
P4025LD
YY WW
WW = Week (01 - 53)
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© Diodes Incorporated
DMP4025LSD
Document Number: DS35937 Rev: 2 - 2
A Product Line of
Diodes Incorporated
DMP4025LSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
Units
-40
V
Gate-Source Voltage
VGSS
20
-7.6
-6.1
-5.8
-6.9
-28.0
-3.0
-28.0
(Notes 7 & 9)
TA = +70°C (Notes 7 & 9)
Continuous Drain Current
Pulsed Drain Current
V
V
GS = -10V
GS = -10V
ID
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 8 & 9)
(Notes 7 & 9)
A
IDM
IS
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
(Notes 8 & 9)
ISM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
1.25
10
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
Power Dissipation
Linear Derating Factor
1.8
14.3
W
mW/°C
PD
2.14
17.2
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 9 & 11)
100
Thermal Resistance, Junction to Ambient
70
58
RθJA
°C/W
°C
Thermal Resistance, Junction to Lead
51
RθJL
Operating and Storage Temperature Range
-55 to +150
T
J, TSTG
Notes:
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (2), except the device is measured at t 10 sec.
8. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point (at the end of the drain lead).
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DMP4025LSD
Document Number: DS35937 Rev: 2 - 2
A Product Line of
Diodes Incorporated
DMP4025LSD
Thermal Characteristics
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© Diodes Incorporated
DMP4025LSD
Document Number: DS35937 Rev: 2 - 2
A Product Line of
Diodes Incorporated
DMP4025LSD
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
-40
V
BVDSS
IDSS
ID = -250µA, VGS = 0V
VDS = -40V, VGS = 0V
-1.0
100
µA
nA
IGSS
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
-0.8
-1.3
18
-1.8
25
V
VGS(th)
ID = -250 µA, VDS = VGS
VGS = -10V, ID = -3A
Static Drain-Source On-Resistance (Note 12)
mΩ
RDS (ON)
30
45
V
GS = -4.5V, ID = -3A
Forward Transconductance (Notes 12 & 13)
Diode Forward Voltage (Note 12)
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
16.6
-0.7
S
V
gfs
VDS = -5V, ID = -3A
IS = -1A, VGS = 0V
-1.0
VSD
1640
179
128
6.43
14.0
33.7
5.5
Ciss
Coss
Crss
Rg
VDS = -20V, VGS = 0V
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -4.5V
Total Gate Charge (Note 14)
Total Gate Charge (Note 14)
Gate-Source Charge (Note 14)
Gate-Drain Charge (Note 14)
Turn-On Delay Time (Note 14)
Turn-On Rise Time (Note 14)
Turn-Off Delay Time (Note 14)
Turn-Off Fall Time (Note 14)
Qg
Qg
VDS = -20V
ID = -3A
nC
ns
Qgs
Qgd
tD(on)
tr
V
GS = -10V
7.3
6.9
14.7
53.7
30.9
V
DD = -20V, VGS = -10V
ID = -3A
tD(off)
tf
Notes:
12. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
Typical Characteristics
30
30
25
V
= -5V
T
= 150°C
DS
25
A
T
= 85°C
A
T
= 25°C
A
T
= 125°C
A
20
20
15
T
= -55°C
A
15
10
10
5
5
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
-VGS, GATE-SOURCE VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
Fig. 1 Typical Output Characteristic
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© Diodes Incorporated
DMP4025LSD
Document Number: DS35937 Rev: 2 - 2
A Product Line of
Diodes Incorporated
DMP4025LSD
0.04
0.03
0.05
0.04
V
= -10V
GS
T
= 150°C
A
T
= 125°C
= 85°C
V
= -4.5V
A
0.03
0.02
GS
T
A
0.02
0.01
0
T
= 25°C
A
V
= -10V
GS
T
= -55°C
A
0.01
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
-ID, DRAIN-SOURCE CURRENT (A)
-ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.7
1.5
0.06
0.05
V
= -10V
GS
I
= -20A
D
0.04
1.3
1.1
V
= -4.5V
GS
I
= -10A
D
V
= -4.5V
0.03
0.02
0.01
0
GS
I
= -10A
D
0.9
V
= -10V
GS
I
= -20A
D
0.7
0.5
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
2.0
1.5
20
18
16
T
= 25°C
14
12
A
I
= -1mA
D
1.0
10
8
I
= -250µA
D
6
0.5
0
4
2
0
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
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© Diodes Incorporated
DMP4025LSD
Document Number: DS35937 Rev: 2 - 2
A Product Line of
Diodes Incorporated
DMP4025LSD
10,000
1,000
10,000
1,000
T
T
= 150°C
A
C
C
iss
= 125°C
= 85°C
A
100
oss
T
A
C
100
10
rss
10
1
T
= 25°C
A
0
5
10
15
20
25
30
35 40
0
5
10
15
20
25
30
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
Fig. 9 Typical Total Capacitance
10
8
V
= -20V
DS
I
= -12A
D
6
4
2
0
0
5
10
15
20
25
30
35
40
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
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© Diodes Incorporated
DMP4025LSD
Document Number: DS35937 Rev: 2 - 2
A Product Line of
Diodes Incorporated
DMP4025LSD
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SO-8
Min
-
0.10
1.30
0.15
0.3
Dim
A
A1
A2
A3
b
Max
1.75
0.20
1.50
0.25
0.5
E1
E
Gauge Plane
Seating Plane
A1
L
D
E
E1
e
h
L
4.85
5.90
3.85
1.27 Typ
-
4.95
6.10
3.95
Detail ‘A’
7°~9°
h
°
45
0.35
0.82
8°
Detail ‘A’
0.62
0°
A2
A3
A
All Dimensions in mm
b
e
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
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© Diodes Incorporated
DMP4025LSD
Document Number: DS35937 Rev: 2 - 2
A Product Line of
Diodes Incorporated
DMP4025LSD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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Copyright © 2013, Diodes Incorporated
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© Diodes Incorporated
DMP4025LSD
Document Number: DS35937 Rev: 2 - 2
相关型号：
DMP4025LSDQ-13
Small Signal Field-Effect Transistor, 5.8A I(D), 40V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
DIODES
DMP4025LSSQ-13
Small Signal Field-Effect Transistor, 6A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
DIODES
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