DMP4015SSSQ-13 [DIODES]
Power Field-Effect Transistor, 7.8A I(D), 40V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8;
| 型号： | DMP4015SSSQ-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, 7.8A I(D), 40V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：458K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP4015SSSQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
100% Unclamped Inductive Switch (UIS) test in production
Low Input Capacitance
ID
V(BR)DSS
RDS(ON) Max
TA = +25°C
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
-10.1A
-8.8A
11mΩ @ VGS = -10V
15mΩ @ VGS = -4.5V
-40V
Description
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
DC-DC Converters
Power Management Functions
Analog Switch
D
SO-8
S
S
S
G
D
D
G
D
D
S
Top View
Internal Schematic
Equivalent Circuit
Top View
Ordering Information (Note 5)
Part Number
Qualification
Case
Packaging
DMP4015SSSQ-13
Automotive
SO-8
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
= Manufacturer’s Marking
P4015SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
P4015SS
YY WW
WW = Week (01 - 53)
1
4
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© Diodes Incorporated
DMP4015SSSQ
Document number: DS36682 Rev. 4 - 2
DMP4015SSSQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-40
Units
V
V
Gate-Source Voltage
±25
VGSS
Steady
State
TA = +25°C
-9.1
-7.2
A
A
A
A
Continuous Drain Current (Note 6) VGS = -10V
Continuous Drain Current (Note 6) VGS = -4.5V
Continuous Drain Current (Note 7) VGS = -10V
Continuous Drain Current (Note 7) VGS = -4.5V
ID
ID
ID
ID
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Steady
State
-7.8
-6.2
Steady
State
-10.1
-8
Steady
State
-8.8
-7
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8)
-100
-22
A
A
IDM
IAS
Avalanche Energy (Note 8)
242
mJ
EAS
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Symbol
PD
Value
1.45
88
Units
W
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
°C/W
W
RθJA
1.82
70
PD
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
°C/W
°C/W
RθJA
7.6
RθJc
-55 to +150
°C
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-40
V
BVDSS
IDSS
-1
VGS = 0V, ID = -250μA
VDS = -40V, VGS = 0V
VGS = 25V, VDS = 0V
μA
nA
IGSS
100
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-1.5
-2
7
-2.5
11
15
V
VGS(th)
VDS = VGS, ID = -250μA
VGS = -10V, ID = -9.8A
VGS = -4.5V, ID = -9.8A
VDS = -20V, ID = -9.8A
VGS = 0V, IS = -1A
Static Drain-Source On-Resistance
mΩ
RDS(ON)
9
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
26
-0.7
S
V
|Yfs|
VSD
-1
4,234
1,036
526
Ciss
Coss
Crss
RG
VDS = -20V, VGS = 0V
f = 1MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
7.77
47.5
14.2
13.5
13.2
10
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
VDS = -20V, VGS = -5V
ID = -9.8A
Gate-Source Charge
nC
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VGS = -10V, VDD = -20V, RG = 6Ω,
ID = -1A, RL = 20Ω
nS
Turn-Off Delay Time
302.7
137.9
tD(off)
tf
Turn-Off Fall Time
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
8 .UIS in production with L = 1mH, TJ = +25°C
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
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© Diodes Incorporated
DMP4015SSSQ
Document number: DS36682 Rev. 4 - 2
DMP4015SSSQ
30.0
30
25
20
15
10
5
-V =4.0V
GS
25.0
20.0
15.0
-V =3.5V
GS
-V =4.5V
GS
-V =10V
GS
-V =3.0V
10.0
5.0
GS
-V =2.5V
GS
0
0
0.0
0
0.5
1
1.5
2
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.02
0.015
0.01
0.005
0
0.02
0.015
0.01
T
= 150C
A
-V = 4.5V
GS
T
= 125C
A
T
= 85C
A
T
= 25C
A
T
= -55C
A
0.005
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
-ID, DRAIN SOURCE CURRENT
-ID, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
1.6
0.02
0.016
0.012
0.008
0.004
0
-V =4.5V
GS
-I =5.0A
1.4
1.2
D
V
=10V
GS
1
0.8
0.6
I
=10A
D
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
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DMP4015SSSQ
Document number: DS36682 Rev. 4 - 2
DMP4015SSSQ
2.4
30
25
20
15
2
1.6
1.2
10
5
0.8
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
50
75 100 125 150
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10
10000
f=1MHz
C
iss
8
6
C
oss
1000
4
2
C
rss
100
0
0
0
5
10
15
20
25
30
20
40
60
80
100
120
VDS , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
Qg, TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
100
10
1
90
80
600
-I (A) @
R
D
DS(ON)
P
=10µs
Limited
W
-
I
D
500
400
300
200
(
A
)
@
70
60
50
40
30
20
P
E
W
AS
=
1
m
s
-I (A) @ DC
D
-I (A) @P =10s
D
W
-I (A) @P =1s
D
W
I
-I (A) @P =100ms
AS
D
W
-I (A) @P =10ms
D
W
0.1
-I (A) @P =100µs
D
W
100
0
T
T
= 150C
J(MAX)
10
0
= 25C
A
Single Pulse
0.01
0
0.2
0.4
INDUCTOR (mH)
Fig. 12 Single-Pulse Avalanche Tested
0.6
0.8
1.0
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
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DMP4015SSSQ
Document number: DS36682 Rev. 4 - 2
DMP4015SSSQ
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RJA(t) = r(t) * RJA
RJA = 75°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.001
0.01
0.1
1
10
100
1000
10000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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© Diodes Incorporated
DMP4015SSSQ
Document number: DS36682 Rev. 4 - 2
DMP4015SSSQ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SO-8
SO-8
Min
-
0.10
1.30
0.15
0.3
Dim
A
A1
A2
A3
b
Max
1.75
0.20
1.50
0.25
0.5
E1
E
Gauge Plane
Seating Plane
A1
L
Detail ‘A’
D
E
E1
e
4.85
5.90
3.85
4.95
6.10
3.95
7°~9°
h
°
45
1.27 Typ
h
L
-
0.35
0.82
8°
Detail ‘A’
A2
A3
A
0.62
0°
b
e
All Dimensions in mm
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SO-8
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
1.27
C1
C2
Y
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DMP4015SSSQ
Document number: DS36682 Rev. 4 - 2
DMP4015SSSQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMP4015SSSQ
Document number: DS36682 Rev. 4 - 2
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