DMP4015SK3Q [DIODES]
P-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMP4015SK3Q |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Green
DMP4015SK3
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
ID
TC = +25°C
-35A
100% Unclamped Inductive Switch (UIS) test in production
Low on-resistance
V(BR)DSS
RDS(on) max
11m @ VGS = -10V
15m @ VGS = -4.5V
Fast switching speed
-40V
-30A
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
)
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications
DC-DC Converters
Power management functions
Backlighting
Terminals: Finish – Matte Tin Finish annealed over Copper
e3
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (approximate)
D
D
TO252
G
S
Top View
Pin-Out
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP4015SK3-13
DMP4015SK3Q-13
Compliance
Standard
Automotive
Case
TO252
TO252
Packaging
2,500/Tape & Reel
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
Logo
.
Part no.
P4015S
YYWW
Xth week: 01 ~ 53
Year: “11” = 2011
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© Diodes Incorporated
DMP4015SK3
Document number: DS35480 Rev. 6 - 2
DMP4015SK3
Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-40
Units
V
V
Gate-Source Voltage
±25
VGSS
T
T
T
C = +25°C
C = +70°C
A = +25°C
Steady
State
-35
-27
A
A
A
Continuous Drain Current (Note 5) VGS = -10V
Continuous Drain Current (Note 5) VGS = -10V
ID
ID
ID
Steady
State
-14
-11
TA = +70°C
T
T
A = +25°C
A = +70°C
-22
-18
t<10s
-100
-5.5
-57
A
A
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 5)
Avalanche Current (Note 6)
IDM
IS
A
IAS
EAS
Avalanche Energy (Note 6)
162
mJ
Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
3.5
2.2
36
TA = +25°C
Total Power Dissipation (Note 5)
W
PD
TA = +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
15
°C/W
Steady state
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
4.5
RθJC
-55 to +150
°C
T
J, TSTG
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-40
V
BVDSS
IDSS
-1
VGS = 0V, ID = -250µA
DS = -40V, VGS = 0V
µA
nA
V
IGSS
100
VGS = 25V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-1.5
-2.0
7
-2.5
11
15
V
VGS(th)
VDS = VGS, ID = -250µA
VGS = -10V, ID = -9.8A
VGS = -4.5V, ID = -9.8A
VDS = -20V, ID = -9.8A
VGS = 0V, IS = -1A
Static Drain-Source On-Resistance
RDS(ON)
m
9
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
26
-0.7
S
V
|Yfs|
VSD
-1.0
4234
1036
526
Ciss
Coss
Crss
RG
VDS = -20V, VGS = 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
7.77
47.5
14.2
13.5
13.2
10.0
302.7
137.9
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = -20V, VGS = -5V
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
nC
Qgs
Qgd
tD(on)
tr
I
D = -9.8A
Turn-On Delay Time
Turn-On Rise Time
VGS = -10V, VDD = -20V,
RG = 6, ID = -1A
ns
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. UIS in production with L = 0.1mH, TJ = +25°C.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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© Diodes Incorporated
DMP4015SK3
Document number: DS35480 Rev. 6 - 2
DMP4015SK3
30.0
25.0
20.0
15.0
30
25
20
15
10
5
-V
= 4.0V
GS
-V = 3.5V
GS
-V
= 4.5V
GS
-V
= 10V
GS
10.0
5.0
-V = 3.0V
GS
0
0
0.0
0
0.5
1
1.5
2
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.02
0.015
0.01
0.005
0
0.02
0.015
0.01
T
= 150C
A
-V = 4.5V
GS
T
= 125C
A
T
= 85C
A
T
A
= 25C
T
= -55C
A
0.005
0
0
0
5
10
15
20
25
30
5
10
15
20
25
30
-ID, DRAIN SOURCE CURRENT
-ID, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
1.6
0.020
0.016
-V
= 4.5V
GS
-I = 5.0A
1.4
1.2
D
0.012
0.008
0.004
0
-V
= 10V
GS
1
0.8
0.6
-I = 10A
D
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 6 On-Resistance Variation with Temperature
0
25
50
75
100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
C)
C)
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© Diodes Incorporated
DMP4015SK3
Document number: DS35480 Rev. 6 - 2
DMP4015SK3
2.4
30
25
20
15
2
1.6
1.2
10
5
0.8
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
50
75 100 125 150
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1000
10000
f = 1MHz
T
=150°C
A
C
ISS
1000
100
T
=125°C
T
A
=85°C
A
C
OSS
100
10
1
T
=25°C
C
A
RSS
0.1
10
0
5
10
15
20
25
30
0
5
10
15
20
25
30
-VDS, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
10
8
100
Single Pulse
90
80
70
60
50
40
30
20
R
R
T
= 72°C/W
JA
(t) = r(t) * R
JA
JA
- T = P * R
J
A
JA
6
4
2
10
0
0
0
0.001 0.01
0.1
1
10
100 1,000
20
40
60
80
100
120
t1, PULSE DURATION TIME (sec)
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
Fig. 12 Single Pulse Maximum Power Dissipation
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DMP4015SK3
Document number: DS35480 Rev. 6 - 2
DMP4015SK3
90
80
100
10
600
500
R
DS(on)
Starting Temperature (T ) = 25°C
J
P
= 10µs
Limited
W
70
60
50
40
30
20
E
AS
400
300
200
DC
P
= 10s
W
1
P
= 1s
W
P
= 100ms
W
P
= 10ms
I
AS
W
P
= 1ms
W
P
= 100µs
W
0.1
TJ(max) = 150°C
TA = 25°C
VGS = -10V
Single Pulse
100
0
10
0
DUT on 1 * MRP Board
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
INDUCTOR (mH)
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Single-Pulse Avalanche Tested
Fig. 14 SOA, Safe Operation Area
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.50
D = 0.02
0.01
D = 0.01
RJA(t) = r(t) * R
D = 0.005
JA
RJA = 72°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.001
0.01
0.1
1
10
100
1,000
10,000
t1, PULSE DURATION TIMES (sec)
Fig. 15 Transient Thermal Resistance
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© Diodes Incorporated
DMP4015SK3
Document number: DS35480 Rev. 6 - 2
DMP4015SK3
Package Outline Dimensions
TO252
Dim Min Max Typ
2.19 2.39 2.29
E
A
A
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
b3
c2
L3
b
0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531
E1
A2
D
H
D
6.00 6.20 6.10
D1 5.21
e
2.286
E
6.45 6.70 6.58
L4
A1
E1 4.32
H
L
9.40 10.41 9.91
1.40 1.78 1.59
L
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
e
3X b
2X b2
a
a
0°
10°
All Dimensions in mm
Suggested Pad Layout
X2
Dimensions
Value (in mm)
Y2
Z
11.6
1.5
7.0
2.5
7.0
6.9
2.3
Z
X1
X2
Y1
Y2
C
C
Y1
E1
X1
E1
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© Diodes Incorporated
DMP4015SK3
Document number: DS35480 Rev. 6 - 2
DMP4015SK3
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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© Diodes Incorporated
DMP4015SK3
Document number: DS35480 Rev. 6 - 2
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