DMP3018SFK-7 [DIODES]
P-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMP3018SFK-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：345K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP3018SFK
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
ID
V(BR)DSS
RDS(on)max
Low Input Capacitance
TA = +25°C
-10.2A
14.5mΩ @ VGS = -10V
25.5mΩ @ VGS = -4.5V
Low Input/Output Leakage
-30V
-7.7A
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Mechanical Data
Case: U-DFN2523-6
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — NiPdAu over Copper Leadframe.
Applications
Load Switch
Power Management Functions
DC-DC Converters
e4
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
D
U-DFN2523-6
Pin 1
G
Pin 1, 2 = Source
Pin 3 = Gate
Pin 4, 5, 6 = Drain
Gate Protection
Diode
S
ESD PROTECTED
Equivalent Circuit
Bottom View
Ordering Information (Note 4)
Part Number
DMP3018SFK-7
DMP3018SFK-13
Case
U-DFN2523-6
U-DFN2523-6
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-DFN2523-6
P7 = Product Type Marking Code
7P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
P7
7P
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
Code
B
C
D
E
F
G
H
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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January 2015
© Diodes Incorporated
DMP3018SFK
Document number: DS37604 Rev. 2 - 2
DMP3018SFK
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-30
Units
V
V
Gate-Source Voltage
±25
VGSS
Steady
State
-10.2
-8.1
T
T
A = +25°C
A = +70°C
A
A
Continuous Drain Current (Note 6) VGS = -10V
Continuous Drain Current (Note 6) VGS = -4.5V
ID
ID
Steady
State
-7.7
-6.1
TA = +25°C
A = +70°C
T
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7)
-3
A
A
IS
-80
-14
104
IDM
IAS
EAS
A
Avalanche Energy (Note 7)
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
Units
W
1
123
PD
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
JA
JA
JC
2.2
PD
Thermal Resistance, Junction to Ambient (Note 6)
55
°C/W
W
R
Total Power Dissipation (Note 6)
17
TC = +25°C
PD
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
7.2
°C/W
°C
R
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
—
—
-1
V
BVDSS
IDSS
—
—
—
—
VGS = 0V, ID = -10mA
Zero Gate Voltage Drain Current TJ = +25°C
Zero Gate Voltage Drain Current TJ = +150°C (Note 9)
Gate-Source Leakage
µA
µA
V
V
DS = -24V, VGS = 0V
GS = ±25V, VDS = 0V
-100
±10
—
IGSS
—
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-1
—
-1.6
9.5
15
-3
V
VGS(th)
VDS = VGS, ID = -250μA
14.5
25.5
-1.2
—
V
V
GS = -10V, ID = -9.5A
GS = -4.5V, ID = -6.9A
Static Drain-Source On-Resistance
mΩ
RDS(ON)
—
Diode Forward Voltage
On State Drain Current (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
-0.7
—
V
A
VSD
—
VGS = 0V, IS = -1A
ID(ON)
-20
VDS ≦-5V, VGS = -10V
2,207
390
343
8.4
Ciss
Coss
Crss
Rg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4,414
780
686
20
V
DS = -15V, VGS = 0V,
Output Capacitance
pF
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS = 0V, VGS = 0V, f = 1MHz
42.7
21.6
7.9
Total Gate Charge (VGS = -10V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Qg
90
Qg
45
nC
ns
VDS = -15V, ID = -9.5A
Qgs
Qgd
tD(on)
tr
16
Gate-Drain Charge
10
20
15
Turn-On Delay Time
7.35
16.4
67.2
37.5
18.6
8.6
30
Turn-On Rise Time
V
DD = -15V, VGS = -10V,
110
60
Turn-Off Delay Time
RGEN = 6ꢀ, ID = -9.5A
tD(off)
tf
Turn-Off Fall Time
35
Reverse Recovery Time
Reverse Recovery Charge
ns
trr
IS = -9.5A, di/dt = 100A/μs
17.5
nC
Qrr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7. UIS in production with L = 1mH, TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
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January 2015
© Diodes Incorporated
DMP3018SFK
Document number: DS37604 Rev. 2 - 2
DMP3018SFK
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
= -5.0V
DS
V
= -10V
GS
V
= -4.0V
GS
V
= -3.5V
GS
V
= -3.0V
GS
T
= 85C
A
T
= 150C
A
T
= 125C
V
= -2.5V
T
= 25C
A
GS
A
T
= -55C
V
= -2.2V
A
GS
0.0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.02
0.018
0.016
0.014
0.012
0.01
0.2
0.18
0.16
0.14
0.12
0.1
I
= -9.5A
D
V
V
= -4.5V
GS
I
= -6.9A
D
= -10V
GS
0.08
0.06
0.04
0.02
0
0.008
0.006
0.004
0.002
0
0
5
10
15
20
25
0
5
10
15
20
25
30
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
-VGS, GATE SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
0.02
0.018
0.016
0.014
0.012
0.01
1.8
1.6
1.4
1.2
1
V
= -10V
GS
T
= 150C
A
T
= 125C
A
V
I
= -4.5V
GS
T
= 85C
A
= -5A
D
T
= 25C
A
0.008
0.006
0.004
0.002
0
T
= -55C
A
0.8
0.6
0
5
10
15
20
25
30
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-ID, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
C)
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© Diodes Incorporated
DMP3018SFK
Document number: DS37604 Rev. 2 - 2
DMP3018SFK
0.03
0.025
0.02
0.015
0.01
0.005
0
3
2.8
2.6
2.4
2.2
2
V
I
= -4.5V
-I = 1mA
D
GS
1.8
1.6
1.4
1.2
1
= -5A
D
-I = 250µA
D
0.8
0.6
0.4
0.2
0
-50 -25
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 7 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
30
25
20
15
10
5
10000
f = 1MHz
C
iss
T = 150
C
1000
A
T = 125C
T = 25C
A
A
C
oss
T = 85C
A
T = -55C
C
A
rss
0
0
100
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
25
30
-VSD, SOURCE-DRAIN VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
Figure 10 Typical Junction Capacitance
10
9
100
10
R
DS(ON)
Limited
8
7
DC
P
= 10s
W
6
P
= 1s
W
V
I
= -15V
DS
1
5
= -9.5A
P
= 100ms
D
W
P
= 10ms
W
4
P
= 1ms
W
3
0.1
P
= 100µs
W
T
T
= 150°C
J(max)
2
= 25°C
A
VGS = -10V
Single Pulse
1
DUT on 1 * MRP Board
0.01
0
0
0.1
1
10
100
5
10 15 20 25 30 35 40 45
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
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© Diodes Incorporated
DMP3018SFK
Document number: DS37604 Rev. 2 - 2
DMP3018SFK
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.01
D = 0.005
RJA(t) = r(t) * R
RJA = 59°C/W
Duty Cycle, D = t1/ t2
JA
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10 100
1000
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
U-DFN2523-6
Dim Min Max Typ
A
A3
A
A1
A3
b
0.57 0.63 0.60
A1
0
0.05 0.02
0.152
D
e
0.25 0.35 0.30
D
2.45 2.55 2.50
L (3x)
D1 1.55 1.65 1.60
e
E
E1
L
0.65
Pin #1 ID
R0.150
2.25 2.35 2.30
1.18 1.28 1.23
0.30 0.40 0.35
0.30 0.40 0.35
E
E1
D1
L1
All Dimensions in mm
L1 (2x)
b (6x)
Suggested Pad Layout
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
U-DFN2523-6
X1
Y1
Dimensions Value (in mm)
Y2
C
X
0.650
0.400
1.700
0.650
0.450
1.830
2.700
Y3
X1
Y
Y1
Y2
Y3
Y
C
X
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© Diodes Incorporated
DMP3018SFK
Document number: DS37604 Rev. 2 - 2
DMP3018SFK
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMP3018SFK
Document number: DS37604 Rev. 2 - 2
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