DMP3018SFV-7 [DIODES]
30V P-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMP3018SFV-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：464K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP3018SFV
30V P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8 (Type UX)
Product Summary
Features and Benefits
ID Max
Low RDS(ON) – ensures on-state losses are minimized
Small form factor thermally efficient package enables higher
density end products
BVDSS
RDS(ON) Max
TC = +25°C
12mΩ @ VGS = -10V
21mΩ @ VGS = -4.5V
-35A
-25A
-30V
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Mechanical Data
®
Case: PowerDI 3333-8 (Type UX)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Applications
Backlighting
Power Management Functions
DC-DC Converters
Weight: 0.03 grams (Approximate)
D
Pin1
S
S
S
G
G
ESD PROTECTED
D
Gate Protection
D
D
S
Diode
D
Top View
Bottom View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP3018SFV-7
DMP3018SFV-13
Case
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
PowerDI3333-8 (Type UX)
PowerDI3333-8 (Type UX)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
V18 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
WW = Week Code (01 to 53)
V18
PowerDI is a registered trademark of Diodes Incorporated.
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www.diodes.com
January 2018
© Diodes Incorporated
DMP3018SFV
Document number: DS40134 Rev. 3 - 2
DMP3018SFV
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-30
Unit
V
Gate-Source Voltage
±25
V
VGSS
Steady
State
TA = +25°C
-11
-9
A
A
Continuous Drain Current (Note 6) VGS = -10V
Continuous Drain Current (Note 7) VGS = -10V
ID
ID
TA = +70°C
TC = +25°C
TC = +70°C
Steady
State
-35
-25
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
-30
-70
-70
-14
104
A
A
IS
IDM
ISM
IAS
EAS
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8) L = 1mH
A
A
Avalanche Energy (Note 8) L = 1mH
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.0
133
Unit
W
Total Power Dissipation (Note 5)
TA = +25°C
Steady State
PD
RθJA
PD
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
1.9
TA = +25°C
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
66
°C/W
W
RθJA
PD
30
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
3.7
°C/W
°C
RθJC
TJ, TSTG
-55 to +150
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
-30
—
—
-1
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
Gate-Source Leakage
μA
μA
VDS = -24V, VGS = 0V
VGS = ±20V, VDS = 0V
—
±10
IGSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-1.0
—
—
—
-3.0
12
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250μA
VGS = -10V, ID = -11.5A
VGS = -4.5V, ID = -8.5A
VGS = 0V, IS = -1A
Static Drain-Source On-Resistance
—
—
21
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
-0.7
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
2,147
407
358
24
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1.0MHz
—
—
—
—
—
—
—
—
—
—
28
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (VGS = -5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Qg
51
Qg
VDS = -15V, ID = -11.5A
6.6
15
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
7.8
Turn-On Rise Time
VDD = -15V, VGS = -10V,
19.9
57.5
42.8
21.5
11.6
Turn-Off Delay Time
tD(OFF)
tF
RG = 6Ω, ID = -11.5A
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
tRR
IS = -11.5A, dI/dt = 100A/μs
QRR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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January 2018
© Diodes Incorporated
DMP3018SFV
Document number: DS40134 Rev. 3 - 2
DMP3018SFV
30
25
20
15
10
5
30.0
25.0
20.0
15.0
10.0
5.0
VDS = -5V
VGS = -4.0V
VGS = -4.5V
VGS = -10.0V
VGS = -3.5V
VGS = -3.2V
TJ=125℃
TJ=85℃
TJ=150℃
TJ=25℃
VGS = -3.0V
TJ= -55℃
0.0
0
0
0.5
1
1.5
2
2.5
3
1.5
2
2.5
3
3.5
4
4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2.Typical Transfer Characteristic
0.03
0.025
0.02
0.015
0.01
0.005
0
0.2
0.15
0.1
ID = -11.5A
VGS = -4.5V
ID = -8.5A
VGS = -10V
0.05
0
0
2
4
6
8
10 12 14 16 18 20
0
5
10
15
20
25
30
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
1.8
1.6
1.4
1.2
1
0.016
0.014
0.012
0.01
VGS = -10V
TJ= 150℃
VGS = -10V, ID = -11.5A
TJ= 125℃
TJ= 85℃
TJ= 25℃
TJ= -55℃
0.008
0.006
0.004
VGS = -4.5V, ID = -8.5A
0.8
0.6
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100 125 150
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
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© Diodes Incorporated
DMP3018SFV
Document number: DS40134 Rev. 3 - 2
DMP3018SFV
3
2.8
2.6
2.4
2.2
2
0.03
0.028
0.026
0.024
0.022
0.02
0.018
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0.002
0
VGS = -4.5V, ID = -8.5A
ID = -1mA
ID = -250μA
1.8
1.6
1.4
1.2
1
VGS = -10V, ID = -11.5A
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
30
25
20
15
10
5
10000
f=1MHz
VGS = 0V
Ciss
1000
Coss
TJ = 85℃
TJ = 125℃
TJ = 25℃
Crss
TJ = 150℃
TJ = -55℃
0
100
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
25
30
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
8
100
10
PW =100µs
RDS(ON) Limited
6
PW =1ms
PW =10ms
TJ(Max) = 150℃
1
4
VDS = -15V, ID = -11.5A
PW =100ms
PW =1s
PW =10s
TC = 25℃
0.1
0.01
Single Pulse
DUT on 1*MRP
Board
2
DC
10
VGS= -10V
0
0
10
20
30
40
50
60
0.01
0.1
1
100
Qg (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11.Gate Charge
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© Diodes Incorporated
DMP3018SFV
Document number: DS40134 Rev. 3 - 2
DMP3018SFV
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
RθJA(t) = r(t) * RθJA
RθJA = 131℃/W
D=0.005
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-06 1E-05 0.0001 0.001
0.01
0.1
1
10
100
1000
10000 100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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© Diodes Incorporated
DMP3018SFV
Document number: DS40134 Rev. 3 - 2
DMP3018SFV
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8 (Type UX)
D
D1
A
A1
PowerDI3333-8
(Type UX)
Dim
Min
Max
Typ
A
A1
b
c
D
D1
D2
E
E1
E2
E2a
E2b
e
0.75
0.00
0.25
0.10
3.20
2.95
2.30
3.20
2.95
1.60
0.95
0.10
0.85 0.80
0.05
--
E1 E
0.40 0.32
0.25 0.15
3.40 3.30
3.15 3.05
2.70 2.50
3.40 3.30
3.15 3.05
2.00 1.80
1.35 1.15
0.30 0.20
0
c
L
E2a
E2b
E2
0.65 BSC
k
L
θ
0.50
0.30
0°
0.90 0.70
0.50 0.40
12°
10°
D2
k
All Dimensions in mm
L
b
e
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8 (Type UX)
X3
X2
Dimensions Value (in mm)
8
C
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
0.540
Y4
X
X1
X2
X3
Y
X1
Y1
Y2
Y1
Y2
Y3
Y4
Y3
Y
1
X
C
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© Diodes Incorporated
DMP3018SFV
Document number: DS40134 Rev. 3 - 2
DMP3018SFV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
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© Diodes Incorporated
DMP3018SFV
Document number: DS40134 Rev. 3 - 2
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