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DMP3020LSS-13 [DIODES]

SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET; 单P沟道增强型MOSFET
DMP3020LSS-13
型号： DMP3020LSS-13
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
单P沟道增强型MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 PC
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DMP3020LSS  
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
Low On-Resistance  
•
•
Case: SOP-8L  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals Connections: See Diagram  
Terminals: Finish - Matte Tin annealed over Copper lead  
frame. Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.072g (approximate)  
•
•
14mΩ @ VGS = -10V  
25mΩ @ VGS = -4.5V  
•
•
•
•
•
•
•
•
•
•
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Lead Free By Design/RoHS Compliant (Note 2)  
"Green" Device (Note 4)  
Qualified to AEC-Q101 Standards for High Reliability  
•
•
•
SOP-8L  
S
D
S
S
G
D
D
D
TOP VIEW  
TOP VIEW  
Internal Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
-30  
Units  
V
V
Gate-Source Voltage  
VGSS  
±25  
Drain Current (Note 1)  
Steady  
State  
TA = 25°C  
TA = 70°C  
-12  
-6  
A
A
ID  
Pulsed Drain Current (Note 3)  
-40  
IDM  
Thermal Characteristics  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Value  
2.5  
Unit  
W
PD  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
50  
°C/W  
°C  
Rθ  
J, TSTG  
JA  
-55 to +150  
T
Notes:  
1. Device mounted on 2 oz. Copper pads on FR-4 PCB with R  
2. No purposefully added lead.  
= 50°C/W.  
JA  
θ
3. Pulse width ≤10μS, Duty Cycle ≤1%.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
1 of 5  
www.diodes.com  
October 2008  
© Diodes Incorporated  
DMP3020LSS  
Document number: DS31263 Rev. 8 - 2  
DMP3020LSS  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
-30  
⎯
⎯
V
BVDSS  
IDSS  
⎯
⎯
⎯
⎯
⎯
-1  
VGS = 0V, ID = -250μA  
VDS = -30V, VGS = 0V  
μA  
±100  
±800  
V
V
GS = ±20V, VDS = 0V  
GS = ±25V, VDS = 0V  
Gate-Source Leakage  
nA  
IGSS  
⎯
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
-1  
-2  
V
VGS(th)  
⎯
11.6  
18.6  
VDS = VGS, ID = -250μA  
VGS = -10V, ID = -8A  
VGS = -4.5V, ID = -5A  
VDS = -10V, ID = -12A  
VGS = 0V, IS = -2A  
14  
25  
⎯
⎯
Static Drain-Source On-Resistance  
RDS (ON)  
mΩ  
Forward Transconductance  
Diode Forward Voltage (Note 5)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
12  
S
V
gfs  
⎯
-0.5  
⎯
-1.1  
VSD  
⎯
1802  
415  
295  
2.3  
pF  
pF  
pF  
Ω
Ciss  
Coss  
Crss  
RG  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Output Capacitance  
V
DS = -15V, VGS = 0V, f = 1.0MHz  
Reverse Transfer Capacitance  
Gate Resistance  
VGS = 0V, VDS = 0V, f = MHz  
SWITCHING CHARACTERISTICS  
V
V
DS = -15V, VGS = -4.5V, ID = -8A  
DS = -15V, VGS = -10V, ID = -8A  
15.3  
30.7  
Total Gate Charge  
Qg  
⎯
⎯
nC  
ns  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
3.5  
7.9  
5.1  
8
Qgs  
Qgd  
td(on)  
tr  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VDS = -15V, VGS = -10V, ID = -8A  
VDS = -15V, VGS = -10V, ID = -8A  
V
R
GS = -10V, VDS = -15V,  
D = 15Ω, RG = 6Ω  
Turn-Off Delay Time  
Fall Time  
46  
30  
td(off)  
tf  
Notes:  
5. Short duration pulse test used to minimize self-heating effect.  
20  
16  
20  
V
= -10V  
GS  
V
= -3.0V  
GS  
V
= -4.0V  
GS  
16  
12  
8
12  
8
V
= -2.5V  
GS  
T
= 150°C  
A
T
= 125°C  
T
= 85°C  
A
A
T
= 25°C  
4
0
4
0
A
T
= -55°C  
A
V
= -2.0V  
GS  
V
= -1.5V  
GS  
1
1.5  
2
2.5  
3
3.5  
0
1
2
3
4
5
-VGS, GATE-SOURCE VOLTAGE (V)  
Fig. 2 Typical Transfer Characteristic  
-VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 1 Typical Output Characteristic  
2 of 5  
www.diodes.com  
October 2008  
© Diodes Incorporated  
DMP3020LSS  
Document number: DS31263 Rev. 8 - 2  
DMP3020LSS  
0.03  
0.025  
0.02  
0.015  
0.01  
0.005  
0
0.03  
0.025  
0.02  
T
= 150°C  
= 125°C  
A
T
A
T
= 85°C  
A
T
= 25°C  
A
V
= -4.5V  
GS  
0.015  
0.01  
T
= -55°C  
A
V
= -10V  
GS  
0.005  
0
0
6
12  
18  
24  
30  
0
6
12  
-ID, DRAIN CURRENT (A)  
Fig. 4 Typical On-Resistance  
18  
24  
30  
-ID, DRAIN-SOURCE CURRENT (A)  
Fig. 3 Typical On-Resistance  
vs. Drain Current and Gate Voltage  
vs. Drain Current and Temperature  
1.6  
1.4  
10,000  
1,000  
100  
f = 1MHz  
V
= -10V  
GS  
I
= -10A  
D
1.2  
1.0  
C
iss  
V
= -4.5V  
= -5A  
GS  
I
D
C
oss  
0.8  
0.6  
C
rss  
-50 -25  
0
25  
50  
75 100 125 150  
0
5
10  
15  
20  
25  
30  
TA, AMBIENT TEMPERATURE (°C)  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 6 Typical Total Capacitance  
Fig. 5 Normalized On-Resistance vs. Ambient Temperature  
2.4  
20  
16  
12  
2.0  
1.6  
T
= 25°C  
A
I
= -250µA  
D
1.2  
0.8  
8
4
0
0.4  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50 -25  
0
25  
50  
75 100 125 150  
-VSD, SOURCE-DRAIN VOLTAGE (V)  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 8 Diode Forward Voltage vs. Current  
3 of 5  
www.diodes.com  
October 2008  
© Diodes Incorporated  
DMP3020LSS  
Document number: DS31263 Rev. 8 - 2  
DMP3020LSS  
1
D = 0.7  
D = 0.5  
D = 0.3  
0.1  
D = 0.1  
D = 0.9  
D = 0.05  
R
(t) = r(t) * R  
θJA  
θJA  
R
= 87°C/W  
θJA  
D = 0.02  
0.01  
0.001  
P(pk)  
t
D = 0.01  
D = 0.005  
D = Single Pulse  
1
t
2
T
- T = P * R (t)  
J
A θJA  
Duty Cycle, D = t /t  
1
2
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1,000  
10,000  
t1, PULSE DURATION TIME (s)  
Fig. 9 Transient Thermal Response  
Ordering Information (Note 6)  
Part Number  
Case  
Packaging  
DMP3020LSS-13  
SOP-8L  
2500/Tape & Reel  
Notes:  
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
Top View  
8
5
Logo  
P3020LS  
YY WW  
Part no.  
Xth week: 01~52  
Year: "07" =2007  
"08" =2008  
1
4
Package Outline Dimensions  
SOP-8L  
Min  
⎯
0.08  
1.30  
Dim  
Max  
1.75  
0.25  
1.50  
A
A1  
A2  
A3  
b
E1  
E
GAUGE PLANE  
SEATING PLANE  
A1  
0.20 Typ.  
0.3  
L
0.5  
D
E
E1  
e
4.80  
5.79  
3.70  
5.30  
6.20  
4.10  
DETAIL A  
7°~9°  
h
1.27 Typ.  
45°  
h
L
θ
0.35  
1.27  
8°  
⎯
0.38  
0°  
DETAIL A  
A2  
A3  
A
b
e
All Dimensions in mm  
D
4 of 5  
www.diodes.com  
October 2008  
© Diodes Incorporated  
DMP3020LSS  
Document number: DS31263 Rev. 8 - 2  
DMP3020LSS  
Suggested Pad Layout  
X
Dimensions Value (in mm)  
X
Y
C1  
C2  
0.60  
1.55  
5.4  
1.27  
C1  
C2  
Y
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
5 of 5  
www.diodes.com  
October 2008  
© Diodes Incorporated  
DMP3020LSS  
Document number: DS31263 Rev. 8 - 2  

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