DMP3026SFDF-7 [DIODES]

P-CHANNEL ENHANCEMENT MODE MOSFET;


型号：	DMP3026SFDF-7
厂家：	DIODES INCORPORATED
描述：	P-CHANNEL ENHANCEMENT MODE MOSFET
文件：	总8页 (文件大小：526K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMP3026SFDF

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



0.6mm Profile – Ideal For Low Profile Applications

Low Gate Threshold Voltage

I_DMax

T_A= +25°C

-8.6A

V_(BR)DSS

R_DS(ON)Max

19mΩ @ VGS = -10V

45mΩ @ VGS = -4.5V

Low On-Resistance

-30V

-5.5A

ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

Description and Applications



Case: U-DFN2020-6 (Type F)

This MOSFET is designed to minimize the on-state resistance

(R_DS(ON)), yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020



Terminals: Finish – NiPdAu over Copper Leadframe. Solderable



Battery Management Application

Power Management Functions

DC-DC Converters

per MIL-STD-202, Method 208



Weight: 0.007 grams (Approximate)

U-DFN2020-6 (Type F)

ESD PROTECTED

Pin1

Gate Protection

Diode

Pin Out

Bottom View

Top View

Bottom View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMP3026SFDF-7

DMP3026SFDF-13

Case

Packaging

3,000/Tape & Reel

10,000/Tape & Reel

U-DFN2020-6 (Type F)

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

6P = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: D = 2016)

M = Month (ex: 9 = September)

Date Code Key

Year

2016

2017

2018

2019

2020

2021

2022

2023

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

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August 2016

DMP3026SFDF

Document number: DS38678 Rev. 1 - 2

DMP3026SFDF

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-30

Units

±25

Gate-Source Voltage

V_GSS

Steady

State

T_A= +25°C

-8.6

-6.9

I_D

T_A= +70°C

T_A= +25°C

T_A= +70°C

Continuous Drain Current (Note 6) V_GS= -10V

-10.3

-8.3

t<10s

I_D

Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)

Continuous Source-Drain Diode Current (Note 6)

Avalanche Current (Note 7) L = 0.1mH

-50

-2.0

-23

I_DM

T_A= +25°C

I_S

I_AS

Avalanche Energy (Note 7) L = 0.1mH

E_AS

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

0.71

Units

T_A= +25°C

Total Power Dissipation (Note 5)

P_D

R_θJA

P_D

0.47

178

125

T_A= +70°C

Steady State

t<10s

T_A= +25°C

T_A= +70°C

Steady State

t<10s

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

°C/W

2.0

1.3

7.4

Thermal Resistance, Junction to Ambient (Note 6)

R_θJA

°C/W

°C

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

Steady State

R_θJC

-55 to +150

T_J,T_STG

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

7. I and E rating are based on low frequency and duty cycles to keep T = +25°C.

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August 2016

DMP3026SFDF

Document number: DS38678 Rev. 1 - 2

DMP3026SFDF

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

-30

—

-1

BV_DSS

I_DSS

VGS = 0V, I_D= -250μA

Zero Gate Voltage Drain Current T_J= +25°C

Zero Gate Voltage Drain Current T_J= +150°C (Note 9)

Gate-Source Leakage

µA

VDS = -24V, V_GS= 0V

VGS = ±25V, V_DS= 0V

-100

±10

—

I_GSS

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

—

-3

-1

—

mΩ

V_GS(TH)

R_DS(ON)

V_SD

V_DS= V_GS, I_D= -250μA

VGS = -10V, ID = -4.5A

VGS = -4.5V, ID = -3.5A

VGS = -4.0V, ID = -3.0A

Static Drain-Source On-Resistance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

-0.7

-1.2

V_GS= 0V, I_S= -1.0A

—

1,204

154

112

—

C_ISS

C_OSS

C_RSS

R_G

V_DS= -15V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Ω

V_DS= 0V, V_GS= 0V, f = 1MHz

19.6

9.2

4.3

3.9

5.3

Total Gate Charge (V_GS= -10V)

Total Gate Charge (V_GS= -4.5V)

Gate-Source Charge

Q_G

V_DS= -15V, I_D= -9.5A

Q_GS

Q_GD

t_D(ON)

t_R

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

V_DS= -15V, V_GS= -10V,

R_G= 6Ω, I_D= -9.5A

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

Reverse Recovery Time

Reverse Recovery Charge

t_RR

I_F= -9.5A, di/dt = 100A/μs

3.3

Q_RR

Notes:

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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August 2016

DMP3026SFDF

Document number: DS38678 Rev. 1 - 2

DMP3026SFDF

= -10.0V

= -4.0V

= -5.0V

= -4.5V

= -3.5V

= 150C

T = 85C

= -3.0V

= 125C

= 25C

T = -55C

= -2.5V

0.5

1.5

2.5

3.5

4.5

V_DS, DRAIN-SOURCE VOLTAGE(V)

Figure1 Typical Output Characteristic

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristic

0.1

0.08

0.06

0.04

0.02

0.06

0.05

0.04

0.03

0.02

= -4.5A

= -4.0V

= -4.5V

= -3.5A

= -10.0V

0.01

I_D, DRAIN SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 4 Typical Drain-Source On-Resistance

vs. Gate-Source Voltage

0.03

0.025

0.02

= -10V

1.8

1.6

= 150C

= -10V

= -4.5A

= 125C

= 85C

1.4

1.2

= 25C

0.015

0.01

= -4.5V

= -3.5A

= -55C

0.8

0.6

0.4

0.2

0.005

-50 -25

75 100 125 150

I_D, DRAIN SOURCE CURRENT (A)

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

T_J, JUNCTION TEMPERATURE (C)

Figure 6 On-Resistance Variation with Temperature

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August 2016

DMP3026SFDF

Document number: DS38678 Rev. 1 - 2

DMP3026SFDF

0.06

0.05

0.04

0.03

0.02

0.01

3.5

2.5

= 250µA

= -4.5V

= -3.5A

1.5

= 1mA

= -10V

0.5

= -4.5A

-50 -25

100 125 150

-50 -25

100 125 150

T_J, JUNCTION TEMPERATURE (°C)

T_J, JUNCTION TEMPERATURE (C)

Figure 8 Gate Threshold Variation vs. Junction Temperature

10000

Figure 7 On-Resistance Variation with Temperature

iss

1000

T = 150C

oss

T = 25C

100

T = 125C

rss

T = -55C

T = 85C

f=1MHz

0.3

0.6

0.9

1.2

1.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forward Voltage vs. Current

100

DS(on)

Limited

= 100µs

= -15V

= -9.5A

= 10s

= 1s

= 100ms

T_J(max)= 150°C

T_C= 25°C

= 10ms

0.1

= 1ms

V_GS= -10V

Single Pulse

DUT on 1 * MRP Board

0.01

10 12 14 16 18 20

0.1

100

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

Q_g, TOTAL GATE CHARGE (nC)

Figure 11 Gate Charge

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August 2016

DMP3026SFDF

Document number: DS38678 Rev. 1 - 2

DMP3026SFDF

1 _{D = 0.9}

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

0.01

R_JA(t) = r(t) * R_JA

R_JA= 175°C/W

Duty Cycle, D = t1/ t2

D = Single Pulse

0.001

0.0001

0.001

0.01

0.1

100

1000

t1, PULSE DURATION TIME (sec)

Figure 13 Transient Thermal Resistance

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August 2016

DMP3026SFDF

Document number: DS38678 Rev. 1 - 2

DMP3026SFDF

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

U-DFN2020-6 (Type F)

U-DFN2020-6

(Type F)

Min Max

0.57 0.63

0.00 0.05

Dim

Typ

0.60

0.03

0.15

0.30

2.00

0.95

0.38

2.00

1.15

0.70

Seating Plane

0.25 0.35

1.95 2.05

0.85 1.05

D2a 0.33 0.43

E2a

1.95 2.05

1.05 1.25

0.65 0.75

0.65 BSC

D2a

E2a

0.863 BSC

0.70 BSC

0.325 BSC

0.37 BSC

0.15 BSC

0.36 BSC

0.225 0.325 0.275

0.20 BSC

0.110 BSC

0.20 BSC

All Dimensions in mm

z(4x)

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

U-DFN2020-6 (Type F)

Value

Dimensions

(in mm)

0.650

0.400

0.480

0.950

1.700

0.425

0.800

1.150

1.450

2.300

Y1 Y4

Pin1

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August 2016

DMP3026SFDF

Document number: DS38678 Rev. 1 - 2

DMP3026SFDF

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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August 2016

DMP3026SFDF

Document number: DS38678 Rev. 1 - 2

DMP3026SFDF-7 [DIODES]

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