DMP3020LSS [DIODES]
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET; 单P沟道增强型MOSFET型号: | DMP3020LSS |
厂家: | DIODES INCORPORATED |
描述: | SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET |
文件: | 总5页 (文件大小:198K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DMP3020LSS
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
•
Low On-Resistance
•
•
Case: SOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072g (approximate)
•
•
14mΩ @ VGS = -10V
25mΩ @ VGS = -4.5V
•
•
•
•
•
•
•
•
•
•
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
•
•
•
SOP-8L
S
D
S
S
G
D
D
D
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-30
Units
V
V
Gate-Source Voltage
VGSS
±25
Drain Current (Note 1)
Steady
State
TA = 25°C
TA = 70°C
-12
-6
A
A
ID
Pulsed Drain Current (Note 3)
-40
IDM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Symbol
Value
2.5
Unit
W
PD
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
50
°C/W
°C
Rθ
J, TSTG
JA
-55 to +150
T
Notes:
1. Device mounted on 2 oz. Copper pads on FR-4 PCB with R
2. No purposefully added lead.
= 50°C/W.
JA
θ
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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October 2008
© Diodes Incorporated
DMP3020LSS
Document number: DS31263 Rev. 8 - 2
DMP3020LSS
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
-30
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
⎯
-1
VGS = 0V, ID = -250μA
VDS = -30V, VGS = 0V
μA
±100
±800
V
V
GS = ±20V, VDS = 0V
GS = ±25V, VDS = 0V
Gate-Source Leakage
nA
IGSS
⎯
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
-1
-2
V
VGS(th)
⎯
11.6
18.6
VDS = VGS, ID = -250μA
VGS = -10V, ID = -8A
VGS = -4.5V, ID = -5A
VDS = -10V, ID = -12A
VGS = 0V, IS = -2A
14
25
⎯
⎯
Static Drain-Source On-Resistance
RDS (ON)
mΩ
Forward Transconductance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
12
S
V
gfs
⎯
-0.5
⎯
-1.1
VSD
⎯
1802
415
295
2.3
pF
pF
pF
Ω
Ciss
Coss
Crss
RG
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Output Capacitance
V
DS = -15V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
VGS = 0V, VDS = 0V, f = MHz
SWITCHING CHARACTERISTICS
V
V
DS = -15V, VGS = -4.5V, ID = -8A
DS = -15V, VGS = -10V, ID = -8A
15.3
30.7
Total Gate Charge
Qg
⎯
⎯
nC
ns
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
3.5
7.9
5.1
8
Qgs
Qgd
td(on)
tr
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VDS = -15V, VGS = -10V, ID = -8A
VDS = -15V, VGS = -10V, ID = -8A
V
R
GS = -10V, VDS = -15V,
D = 15Ω, RG = 6Ω
Turn-Off Delay Time
Fall Time
46
30
td(off)
tf
Notes:
5. Short duration pulse test used to minimize self-heating effect.
20
16
20
V
= -10V
GS
V
= -3.0V
GS
V
= -4.0V
GS
16
12
8
12
8
V
= -2.5V
GS
T
= 150°C
A
T
= 125°C
T
= 85°C
A
A
T
= 25°C
4
0
4
0
A
T
= -55°C
A
V
= -2.0V
GS
V
= -1.5V
GS
1
1.5
2
2.5
3
3.5
0
1
2
3
4
5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
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October 2008
© Diodes Incorporated
DMP3020LSS
Document number: DS31263 Rev. 8 - 2
DMP3020LSS
0.03
0.025
0.02
0.015
0.01
0.005
0
0.03
0.025
0.02
T
= 150°C
= 125°C
A
T
A
T
= 85°C
A
T
= 25°C
A
V
= -4.5V
GS
0.015
0.01
T
= -55°C
A
V
= -10V
GS
0.005
0
0
6
12
18
24
30
0
6
12
-ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
18
24
30
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
vs. Drain Current and Temperature
1.6
1.4
10,000
1,000
100
f = 1MHz
V
= -10V
GS
I
= -10A
D
1.2
1.0
C
iss
V
= -4.5V
= -5A
GS
I
D
C
oss
0.8
0.6
C
rss
-50 -25
0
25
50
75 100 125 150
0
5
10
15
20
25
30
TA, AMBIENT TEMPERATURE (°C)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Total Capacitance
Fig. 5 Normalized On-Resistance vs. Ambient Temperature
2.4
20
16
12
2.0
1.6
T
= 25°C
A
I
= -250µA
D
1.2
0.8
8
4
0
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
-50 -25
0
25
50
75 100 125 150
-VSD, SOURCE-DRAIN VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 Diode Forward Voltage vs. Current
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October 2008
© Diodes Incorporated
DMP3020LSS
Document number: DS31263 Rev. 8 - 2
DMP3020LSS
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
(t) = r(t) * R
θJA
θJA
R
= 87°C/W
θJA
D = 0.02
0.01
0.001
P(pk)
t
D = 0.01
D = 0.005
D = Single Pulse
1
t
2
T
- T = P * R (t)
J
A θJA
Duty Cycle, D = t /t
1
2
0.0001
0.001
0.01
0.1
1
10
100
1,000
10,000
t1, PULSE DURATION TIME (s)
Fig. 9 Transient Thermal Response
Ordering Information (Note 6)
Part Number
Case
Packaging
DMP3020LSS-13
SOP-8L
2500/Tape & Reel
Notes:
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Top View
8
5
Logo
P3020LS
YY WW
Part no.
Xth week: 01~52
Year: "07" =2007
"08" =2008
1
4
Package Outline Dimensions
SOP-8L
Min
⎯
0.08
1.30
Dim
Max
1.75
0.25
1.50
A
A1
A2
A3
b
E1
E
GAUGE PLANE
SEATING PLANE
A1
0.20 Typ.
0.3
L
0.5
D
E
E1
e
4.80
5.79
3.70
5.30
6.20
4.10
DETAIL A
7°~9°
h
1.27 Typ.
45°
h
L
θ
0.35
1.27
8°
⎯
0.38
0°
DETAIL A
A2
A3
A
b
e
All Dimensions in mm
D
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October 2008
© Diodes Incorporated
DMP3020LSS
Document number: DS31263 Rev. 8 - 2
DMP3020LSS
Suggested Pad Layout
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
1.27
C1
C2
Y
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
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October 2008
© Diodes Incorporated
DMP3020LSS
Document number: DS31263 Rev. 8 - 2
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