DMP1096UCB4-7 [DIODES]
Small Signal Field-Effect Transistor, 2.4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, WL-CSP1010H6-4, 4 PIN;
| 型号： | DMP1096UCB4-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 2.4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, WL-CSP1010H6-4, 4 PIN 开关 晶体管 |
| 文件： | 总6页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP1096UCB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ. @ VGS = -4.5V, TA = +25°C)
Features
LD-MOS Technology with the Lowest Figure of Merit:
RDS(on) = 85mΩ to Minimize On-State Losses
Qg = 3.7nC for Ultra-Fast Switching
VDSS
RDS(on)
Qg
Qgd
ID
-12V
85mΩ
3.7nC
0.6nC
-2.6A
Vgs(th) = -0.6V typ. for a Low Turn-On Potential
CSP with Footprint 1.0mm × 1.0mm
Description
Height = 0.62mm for Low Profile
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
ESD = 3kV HBM Protection of Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Mechanical Data
Battery Management
Load Switch
Case: U-WLB1010-4
Battery Protection
Terminal Connections: See Diagram Below
Weight: 0.005 grams (Approximate)
U-WLB1010-4
D
G
D
S
ESD PROTECTED TO 3kV
Top View
Equivalent Circuit
Ordering Information (Note 3)
Part Number
Case
Packaging
DMP1096UCB4-7
U-WLB1010-4
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
1W = Product Type Marking Code
YM = Date Code Marking
BW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
M = Month (ex: 9 = September)
Date Code Key
Year
2010
2011
2012
2013
2014
2015
2016
2017
2018
Code
X
Y
Z
A
B
C
D
E
F
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMP1096UCB4
Document number: DS31954 Rev. 8 - 2
DMP1096UCB4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-12
-5
Unit
V
Gate-Source Voltage
V
VGSS
Steady
Continuous Drain Current (Note 5) VGS = -4.5V
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
-2.6
-2.1
A
ID
Steady
Continuous Drain Current (Note 5) VGS = -2.5V
State
-2.4
-1.9
A
A
ID
Pulsed Drain Current (Note 6)
-10
IDM
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Symbol
PD
Value
0.82
Unit
W
150
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-12
-
-
-
-
-
-
V
V
BVDSS
BVGSS
IDSS
VGS = 0V, ID = -250μA
VDS = 0V, IG = -250μA
VDS = -9.6V, VGS = 0V
VGS = -5V, VDS = 0V
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
-6.0
-
-
-1
A
nA
-500
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.4
-0.6
85
-1.0
102
116
152
-
V
VGS(th)
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -500mA
VGS = -2.5V, ID = -500mA
VGS = -1.5V, ID = -500mA
VDS = -6V, ID = -500mA
VGS = 0V, IS = -500mA
-
-
-
-
mΩ
Static Drain-Source On-Resistance
97
RDS (ON)
127
4
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
S
V
|Yfs|
VSD
-0.6
-1.0
-
-
-
-
-
-
-
-
-
-
-
251
359
70
-
-
-
-
-
-
-
-
-
-
-
Ciss
Coss
Crss
Qg
VDS = -6V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
3.7
0.4
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Qg(th)
tD(on)
tr
VGS = -4.5V, VDS = -6V,
ID = -500mA
0.6
0.2
Gate Charge at Vth
17.6
26.9
37.5
32.3
Turn-On Delay Time
Turn-On Rise Time
VDS = -6V, VGS = -2.5V,
RG = 20Ω, ID = -500mA
ns
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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© Diodes Incorporated
DMP1096UCB4
Document number: DS31954 Rev. 8 - 2
DMP1096UCB4
5
4
5.0
4.0
V
= -4.5V
GS
V
= -5V
DS
V
= -3.0V
GS
V
= -2.5V
GS
V
= -2.0V
3
2
3.0
2.0
GS
V
= -1.5V
GS
T
= 150°C
1
0
A
1.0
0
T
A
= 85°C
T
= 125°C
A
A
T
= 25°C
V
= -1.2V
GS
T
= -55°C
A
0
0.3
0.6
0.9
1.2
1.5
0
0.5
1.0
1.5
2.0
2.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
Fig. 1 Typical Output Characteristic
0.20
0.18
0.14
0.12
0.10
V
= -4.5V
GS
0.16
0.14
0.12
T
T
= 150°C
A
V
= -2.5V
= -4.5V
= 125°C
= 85°C
GS
A
0.10
0.08
T
A
V
GS
T
= 25°C
A
0.06
0.04
0.08
0.06
T
= -55°C
A
0.02
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
-ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.6
1.4
0.16
0.14
0.12
0.10
0.08
V
= -2.5V
GS
V
= -2.5V
GS
1.2
1.0
I
= -0.5A
D
I
= -0.5A
D
V
= -4.5V
= -1.0A
GS
I
D
V
= -4.5V
GS
= -1.0A
I
D
0.8
0.6
0.06
0.04
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
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© Diodes Incorporated
DMP1096UCB4
Document number: DS31954 Rev. 8 - 2
DMP1096UCB4
1.2
1.0
5
4
0.8
0.6
T
= 25°C
3
2
A
I
= -1mA
D
I
= -250µA
D
0.4
0.2
0
1
0
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10,000
1,000
100
f = 1MHz
T
= 150°C
= 125°C
A
1,000
T
A
10
1
C
iss
T
= 85°C
= 25°C
A
C
oss
100
10
C
T
rss
A
0.1
0.01
0
2
4
6
8
10
12
0
2
4
6
8
10
12
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
R
(t) = r(t) * R
JA
JA
R
= 150°C/W
JA
0.01
P(pk)
T
D = 0.01
t
1
t
2
D = 0.005
- T = P * R (t)
J
A
JA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
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May 2015
© Diodes Incorporated
DMP1096UCB4
Document number: DS31954 Rev. 8 - 2
DMP1096UCB4
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
E
U-WLB1010-4
Dim
D
E
A
A2
b
e
SD
SE
Min
0.95
0.95
0.25
Max
1.05
1.05
0.62
0.35
Typ
1.00
1.00
0.38
0.30
0.50
0.25
0.25
D
A2
A
e
4X-Ø b
SD
All Dimensions in mm
SE
e
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
ØD
Dimensions
Value (in mm)
0.50
C
C
D
0.25
C
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DMP1096UCB4
Document number: DS31954 Rev. 8 - 2
DMP1096UCB4
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMP1096UCB4
Document number: DS31954 Rev. 8 - 2
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