DMP10H400SE-13 [DIODES]
Power Field-Effect Transistor, 2.3A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,;
| 型号： | DMP10H400SE-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：404K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP10H400SE
100V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low Gate Drive
ID
BVDSS
RDS(ON) Max
TA = +25C
Low Input Capacitance
Fast Switching Speed
-2.3A
-2.1A
250m @ VGS = -10V
300m @ VGS = -4.5V
-100V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMP10H400SEQ)
Description
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Mechanical Data
Case: SOT223
Applications
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Lead Frame.
Motor Control
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
D
SOT223
G
S
Top View
Pin Out - Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP10H400SE-13
Case
SOT223
Packaging
2,500 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
= Manufacturer’s Marking
P400SE = Marking Code
YWW = Date Code Marking
Y or Y= Year (ex: 5 = 2015)
WW = Week (01 to 53)
YWW
P400SE
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© Diodes Incorporated
DMP10H400SE
Document Number DS37841 Rev. 3 - 2
DMP10H400SE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-100
±20
Unit
V
Gate-Source Voltage
V
VGSS
Steady
State
TC = +25°C
TA = +25°C
-6.0
-2.3
A
Continuous Drain Current, VGS = -10V (Note 5)
ID
Maximum Body Diode Forward Current (Note 5)
-1.9
-10
A
A
IS
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%)
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
2.0
Unit
TA = +25°C
Total Power Dissipation (Note 5)
W
PD
1.3
62
13.7
TA = +70°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 5)
°C/W
W
RθJA
PD
TC = +25°C
°C/W
°C
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
9.1
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-100
V
1
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -80V, VGS = 0V
VGS = ±20V, VDS = 0V
µA
nA
±100
IGSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
-1.0
-2.2
203
241
-0.9
-3.0
250
300
-1.2
V
m
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250µA
VGS = -10V, ID = -5A
VGS = -4.5V, ID =-5A
VGS = 0V, IS = -5A
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
1239
42
Ciss
Coss
Crss
Rg
Output Capacitance
pF
VDS = -25V, VGS = 0V, f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
28
Reverse Transfer Capacitance
Gate Resistance
13
8.4
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Qg
17.5
2.8
Qg
nC
VDS = -60V, ID = -5A
Qgs
Qgd
tD(ON)
tR
3.2
Gate-Drain Charge
9.1
Turn-On Delay Time
14.9
57.4
34.4
25.2
24.5
Turn-On Rise Time
ns
VDD = -50V, RG = 9.1, ID = -5A
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
tRR
VGS = 0V, IS = -5A, di/dt = 100A/μs
VGS = 0V, IS = -5A, di/dt = 100A/μs
nC
QRR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
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© Diodes Incorporated
DMP10H400SE
Document Number DS37841 Rev. 3 - 2
DMP10H400SE
8
6
4
2
0
10.0
8.0
6.0
4.0
2.0
0.0
VGS=-10V
VDS=-5V
VGS=-4.5V
VGS=-4.0V
VGS=-5.0V
125℃
85℃
VGS=-3.5V
25℃
150℃
-55℃
VGS=-3.2V
4
0
1
2
3
5
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.35
0.5
0.45
0.4
0.3
0.25
0.2
VGS=-4.5V
0.35
0.3
VGS=-10V
0.25
0.2
ID=-5.0A
0.15
0.1
0.15
0
4
8
12
16
20
0
2
4
6
8
10
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. Typical Transfer Characteristic
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0.5
0.4
0.3
0.2
0.1
0
VGS=-10V
150℃
VGS=-10V, ID=-5.0A
125℃
85℃
25℃
VGS=-4.5V, ID=-5.0A
-55℃
-50 -25
0
25
50
75 100 125 150
0
2
4
6
8
10
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (℃)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
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© Diodes Incorporated
DMP10H400SE
Document Number DS37841 Rev. 3 - 2
DMP10H400SE
0.5
0.45
0.4
2.6
2.4
2.2
2
ID=-1mA
0.35
0.3
VGS=-4.5V, ID=-5.0A
ID=-250μA
0.25
0.2
1.8
1.6
1.4
VGS=-10V, ID=-5.0A
0.15
0.1
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
10
8
10000
1000
100
f=1MHz
Ciss
VGS=0V, TJ=85℃
VGS=0V, TJ=125℃
6
4
VGS=0V, TJ=150℃
VGS=0V, TJ=25℃
Coss
2
VGS=0V, TJ=-55℃
Crss
30
10
0
0
5
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
15
20
25
35
40
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
100
10
RDS(ON) Limited
PW=100μs
PW=1ms
6
1
VDS=-60V, ID=-5A
PW=10ms
PW=100ms
4
0.1
PW=1s
TJ(MAX)=150℃
TC=25℃
PW=10s
2
0.01
0.001
DC
Single Pulse
DUT on 1*MRP board
VGS= -10V
0
0
2
4
6
8
10 12 14 16 18
0.1
1
10
100
1000
Qg, TOTAL GATE CHARGE (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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© Diodes Incorporated
DMP10H400SE
Document Number DS37841 Rev. 3 - 2
DMP10H400SE
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
D=0.005
RθJA(t)=r(t) * RθJA
RθJA=98℃ /W
D=Single Pulse
Duty Cycle, D=t1 / t2
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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© Diodes Incorporated
DMP10H400SE
Document Number DS37841 Rev. 3 - 2
DMP10H400SE
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SOT223
D
Q
b1
C
SOT223
Dim Min Max Typ
1.55 1.65 1.60
A1 0.010 0.15 0.05
A
E
E1
b
b1
C
D
E
E1
e
e1
L
0.60 0.80 0.70
2.90 3.10 3.00
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
6.90 7.10 7.00
Gauge
Plane
0.25
Seating
Plane
L
e1
b
-
-
-
-
4.60
2.30
e
0.85 1.05 0.95
0.84 0.94 0.89
A
A1
Q
7°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT223
X1
Y1
Dimensions Value (in mm)
C
C1
X
X1
Y
2.30
6.40
1.20
3.30
1.60
1.60
8.00
C1 Y2
Y1
Y2
Y
C
X
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© Diodes Incorporated
DMP10H400SE
Document Number DS37841 Rev. 3 - 2
DMP10H400SE
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
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labeling can be reasonably expected to result in significant injury to the user.
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Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMP10H400SE
Document Number DS37841 Rev. 3 - 2
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