DMP10H400SEQ-13 [DIODES]
Power Field-Effect Transistor,;
| 型号： | DMP10H400SEQ-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：387K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP10H400SEQ
100V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low Gate Drive
ID
BVDSS
RDS(ON) Max
TA = +25C
Low Input Capacitance
Fast Switching Speed
-2.3A
-2.1A
250m @ VGS = -10V
300m @ VGS = -4.5V
-100V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Lead Frame.
Engine Management Systems
Body Control Electronics
DC-DC Converters
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
D
SOT223
G
S
Top View
Pin Out - Top View
Equivalent Circuit
Ordering Information (Note 5)
Part Number
Case
Packaging
DMP10H400SEQ-13
SOT223
2,500 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
= Manufacturer’s Marking
P400SE = Marking Code
YWW = Date Code Marking
Y or Y= Year (ex: 15 = 2015)
WW = Week (01 to 53)
YWW
P400SE
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December 2015
© Diodes Incorporated
DMP10H400SEQ
Document Number DS38396 Rev. 2 - 2
DMP10H400SEQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-100
±20
Unit
V
Gate-Source Voltage
V
VGSS
Steady
State
TC = +25°C
TA = +25°C
-6.0
-2.3
A
Continuous Drain Current, VGS = -10V (Note 6)
ID
Maximum Body Diode Forward Current (Note 6)
-1.9
-10
A
A
IS
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%)
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
2.0
1.3
62
TA = +25°C
Total Power Dissipation (Note 6)
W
PD
TA = +70°C
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 6)
°C/W
W
RθJA
PD
13.7
TC = +25°C
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
9.1
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-100
V
BVDSS
IDSS
1
VGS = 0V, ID = -250µA
VDS = -80V, VGS = 0V
VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current
Gate-Source Leakage
µA
nA
±100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-1.0
-2.2
203
241
-0.9
-3.0
250
300
-1.2
V
m
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250µA
VGS = -10V, ID = -5A
VGS = -4.5V, ID =-5A
VGS = 0V, IS = -5A
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
1239
42
Ciss
Coss
Crss
Rg
Output Capacitance
pF
VDS = -25V, VGS = 0V, f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
28
13
8.4
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Qg
17.5
2.8
Qg
nC
VDS = -60V, ID = -5A
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
3.2
Turn-On Delay Time
9.1
Turn-On Rise Time
14.9
57.4
34.4
25.2
24.5
ns
VDD = -50V, Rg = 9.1, ID = -5A
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
tRR
VGS = 0V, IS = -5A, di/dt = 100A/μs
VGS = 0V, IS = -5A, di/dt = 100A/μs
nC
QRR
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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December 2015
© Diodes Incorporated
DMP10H400SEQ
Document Number DS38396 Rev. 2 - 2
DMP10H400SEQ
8
6
4
2
0
10.0
8.0
6.0
4.0
2.0
0.0
VGS=-10V
VDS=-5V
VGS=-4.5V
VGS=-5.0V
VGS=-4.0V
125℃
150℃
85℃
VGS=-3.5V
25℃
-55℃
VGS=-3.2V
4
0
1
2
3
5
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.35
0.5
0.45
0.4
0.3
0.25
0.2
VGS=-4.5V
VGS=-10V
0.35
0.3
0.25
0.2
ID=-5.0A
0.15
0.1
0.15
0
4
8
12
16
20
0
2
4
6
8
10
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. Typical Transfer Characteristic
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0.5
0.4
0.3
0.2
0.1
0
VGS=-10V
150℃
VGS=-10V, ID=-5.0A
125℃
85℃
25℃
VGS=-4.5V, ID=-5.0A
-55℃
-50 -25
0
25
50
75 100 125 150
0
2
4
6
8
10
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (℃)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
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December 2015
© Diodes Incorporated
DMP10H400SEQ
Document Number DS38396 Rev. 2 - 2
DMP10H400SEQ
0.5
0.45
0.4
2.6
2.4
2.2
2
ID=-1mA
0.35
0.3
VGS=-4.5V, ID=-5.0A
ID=-250μA
0.25
0.2
1.8
1.6
1.4
VGS=-10V, ID=-5.0A
0.15
0.1
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
10
8
10000
1000
100
f=1MHz
Ciss
VGS=0V, TJ=85℃
VGS=0V, TJ=125℃
6
4
VGS=0V, TJ=150℃
VGS=0V, TJ=25℃
Coss
2
VGS=0V, TJ=-55℃
Crss
30
10
0
0
5
10
15
20
25
35
40
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
8
100
10
RDS(ON) Limited
PW=100μs
PW=1ms
6
1
VDS=-60V, ID=-5A
PW=10ms
PW=100ms
4
0.1
PW=1s
TJ(MAX)=150℃
TC=25℃
PW=10s
2
0.01
0.001
DC
Single Pulse
DUT on 1*MRP board
VGS= -10V
0
0
2
4
6
8
10 12 14 16 18
0.1
1
10
100
1000
Qg, TOTAL GATE CHARGE (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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December 2015
© Diodes Incorporated
DMP10H400SEQ
Document Number DS38396 Rev. 2 - 2
DMP10H400SEQ
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
0.001
D=0.005
RθJA(t)=r(t) * RθJA
RθJA=98℃ /W
Duty Cycle, D=t1 / t2
D=Single Pulse
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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December 2015
© Diodes Incorporated
DMP10H400SEQ
Document Number DS38396 Rev. 2 - 2
DMP10H400SEQ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SOT223
D
Q
b1
C
SOT223
Dim Min Max Typ
1.55 1.65 1.60
A1 0.010 0.15 0.05
A
E
E1
b
b1
C
D
E
E1
e
e1
L
0.60 0.80 0.70
2.90 3.10 3.00
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
6.90 7.10 7.00
Gauge
Plane
0.25
Seating
Plane
L
e1
-
-
-
-
4.60
2.30
b
e
0.85 1.05 0.95
0.84 0.94 0.89
Q
A
A1
7°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT223
X1
Y1
Dimensions Value (in mm)
C
C1
X
X1
Y
2.30
6.40
1.20
3.30
1.60
1.60
8.00
C1 Y2
Y1
Y2
Y
C
X
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© Diodes Incorporated
DMP10H400SEQ
Document Number DS38396 Rev. 2 - 2
DMP10H400SEQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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DMP10H400SEQ
Document Number DS38396 Rev. 2 - 2
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