DMMT5551S-7 [DIODES]
MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR; MATCHED NPN小信号表面贴装晶体管
| 型号： | DMMT5551S-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总3页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODEL: DMMT5551
DMMT5551/DMMT5551S
MATCHED NPN SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
Features
·
·
·
·
·
·
·
Epitaxial Planar Die Construction
A
Complementary PNP Type Available (DMMT5401)
Ideal for Medium Power Amplification and Switching
Intrinsically Matched NPN Pair (Note 1)
SOT-26
C
B
Dim Min Max Typ
2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)
1% Matched Tolerance, Available (Note 2)
A
B
C
D
F
0.35 0.50 0.38
1.50 1.70 1.60
2.70 3.00 2.80
Available in Lead Free/RoHS Compliant Version (Note 5)
H
¾
¾
¾
¾
0.95
0.55
K
J
M
Mechanical Data
H
J
2.90 3.10 3.00
0.013 0.10 0.05
1.00 1.30 1.10
0.35 0.55 0.40
0.10 0.20 0.15
·
·
Case: SOT-26
F
L
D
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
K
L
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
M
a
E2
C2
E1
E1
C2
C1
Terminals: Solderable per MIL-STD-202, Method 208
0°
8°
¾
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Copper leadframe). Please see Ordering
Information, Note 9, on Page 2
All Dimensions in mm
B1
E2
B2
C1
B1
B2
·
·
·
Marking (See Page 2): K4R & K4T
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
DMMT5551S
(K4T Marking Code)
DMMT5551
(K4R Marking Code)
@ TA = 25°C unless otherwise specified
Characteristic
Maximum Ratings
Symbol
VCBO
VCEO
VEBO
IC
Value
180
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
160
V
Emitter-Base Voltage
6.0
V
Collector Current - Continuous (Note 3)
Power Dissipation (Note 3, 4)
200
mA
mW
K/W
°C
Pd
300
RqJA
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage and Temperature Range
417
Tj, TSTG
-55 to +150
Notes: 1. Built with adjacent die from a single wafer.
2. Contact the Diodes, Inc. Sales department.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Maximum combined dissipation.
5. No purposefully added lead.
DS30436 Rev. 4 - 2
1 of 3
DMMT5551/DMMT5551S
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
Min
Max
Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC = 100mA, IE = 0
180
160
6.0
¾
¾
¾
V
V
V
IC = 1.0mA, IB = 0
IE = 10mA, IC = 0
V
CB = 120V, IE = 0
nA
ICBO
IEBO
Collector Cutoff Current
¾
¾
50
50
VCB = 120V, IE = 0, TA = 100°C
mA
VEB = 4.0V, IC = 0
Emitter Cutoff Current
nA
ON CHARACTERISTICS (Note 6)
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
80
80
30
¾
250
¾
hFE
DC Current Gain (Note 7)
¾
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
0.15
0.20
VCE(SAT)
VBE(SAT)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
¾
¾
V
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
1.0
SMALL SIGNAL CHARACTERISTICS
VCB = 10V, f = 1.0MHz, IE = 0
Cobo
hFE
Output Capacitance
¾
6.0
pF
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
50
250
¾
VCE = 10V, IC = 10mA,
f = 100MHz
fT
100
300
8.0
MHz
dB
VCE = 5.0V, IC = 200mA,
RS = 1.0kW, f = 1.0kHz
NF
¾
(Note 8)
Ordering Information
Device
Packaging
SOT-26
Shipping
DMMT5551-7
DMMT5551S-7
3000/Tape & Reel
3000/Tape & Reel
SOT-26
Notes: 6. Short duration test pulse used to minimize self-heating effect.
7. The DC Current Gain, h , (matched at I = 10mA and V = 5V) Collector Emitter Saturation Voltage, V , and Base
CE(SAT)
FE
C
CE
Emitter Saturation Voltage, V
are matched with typical matched tolerances of 1% and maximum of 2%.
BE(SAT)
8. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
9. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: DMMT5551-7-F.
Marking Information
E2
C2
E1
E1
C1
C2
K4T = DMMT5551S Product Type Marking Code
YM = Date Code Marking
Y = Year ex: P = 2003
K4R = DMMT5551 Product Type Marking Code
YM = Date Code Marking
Y = Year ex: P = 2003
K4R
K4T
M = Month ex: 9 = September
M = Month ex: 9 = September
C1
B1
B2
E2
B2
B1
Date Code Key
Year
2003
2004
2005
2006
2007
2008
2009
Code
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30436 Rev. 4 - 2
2 of 3
www.diodes.com
DMMT5551/DMMT5551S
0.15
0.14
0.13
0.12
0.11
0.10
I
C = 10
IB
350
300
250
TA = 150°C
200
150
0.09
0.08
0.07
0.06
TA = 25°C
100
50
0
0.05
0.04
TA = -50°C
200
0
175
25
50
150
100 125
75
1
100
10
1000
TA, AMBIENT TEMPERATURE (°C)
IC, COLLECTOR CURRENT (mA)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
1.0
1000
VCE = 5V
VCE = 5V
0.9
TA = -50°C
0.8
0.7
TA = 150°C
100
TA = 25°C
0.6
TA = 25°C
TA = -50°C
0.5
0.4
10
TA = 150°C
0.3
0.2
1
0.1
10
1
100
100
10
1
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs
Collector Current
Fig. 4, Base Emitter Voltage
vs. Collector Current
1000
VCE = 5V
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs.
Collector Current
DS30436 Rev. 4 - 2
3 of 3
www.diodes.com
DMMT5551/DMMT5551S
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