DMMT5551_1 [DIODES]
MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR; MATCHED NPN小信号表面贴装晶体管
| 型号： | DMMT5551_1 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总4页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODEL: DMMT5551
DMMT5551/DMMT5551S
Lead-free Green
MATCHED NPN SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
Features
·
·
·
·
·
·
·
Epitaxial Planar Die Construction
Complementary PNP Type Available (DMMT5401)
A
Ideal for Low Power Amplification and Switching
Intrinsically Matched NPN Pair (Note 1)
2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)
Lead Free/RoHS Compliant (Note 4)
"Green" Device (Note 5 and 6)
SOT-26
C
B
Dim Min Max Typ
A
B
C
D
F
0.35 0.50 0.38
1.50 1.70 1.60
2.70 3.00 2.80
H
¾
¾
¾
¾
0.95
0.55
K
J
M
Mechanical Data
H
J
2.90 3.10 3.00
0.013 0.10 0.05
1.00 1.30 1.10
0.35 0.55 0.40
0.10 0.20 0.15
F
L
D
·
·
Case: SOT-26
Case Material: Molded Plastic, "Green" Molding
Compound, Note 7. UL Flammability Classification
Rating 94V-0
K
L
M
a
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
E2
C2
E1
E1
C2
C1
0°
8°
¾
Terminals: Solderable per MIL-STD-202, Method 208
All Dimensions in mm
Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
B1
E2
B2
C1
B1
B2
·
·
·
Marking (See Page 2): K4R & K4T
DMMT5551S
(K4T Marking Code)
DMMT5551
(K4R Marking Code)
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
@ TA = 25°C unless otherwise specified
Characteristic
Maximum Ratings
Symbol
VCBO
VCEO
VEBO
IC
Value
180
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
160
V
Emitter-Base Voltage
6.0
V
Collector Current - Continuous (Note 2)
Power Dissipation (Note 2, 3)
200
mA
mW
°C/W
°C
Pd
300
RqJA
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage and Temperature Range
417
Tj, TSTG
-55 to +150
Notes: 1. Built with adjacent die from a single wafer.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Maximum combined dissipation.
4. No purposefully added lead.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php..
6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30436 Rev. 7 - 2
1 of 4
DMMT5551/DMMT5551S
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
Min
Max
Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC = 100mA, IE = 0
180
160
6.0
¾
¾
¾
V
V
V
IC = 1.0mA, IB = 0
IE = 10mA, IC = 0
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100°C
nA
ICBO
IEBO
Collector Cutoff Current
¾
¾
50
50
mA
VEB = 4.0V, IC = 0
Emitter Cutoff Current
nA
ON CHARACTERISTICS (Note 7)
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
80
80
30
¾
250
¾
hFE
DC Current Gain (Note 8)
¾
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
0.15
0.20
VCE(SAT)
VBE(SAT)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
¾
¾
V
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
1.0
SMALL SIGNAL CHARACTERISTICS
VCB = 10V, f = 1.0MHz, IE = 0
Cobo
hFE
Output Capacitance
¾
6.0
pF
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
50
250
¾
VCE = 10V, IC = 10mA,
f = 100MHz
fT
100
300
8.0
MHz
dB
VCE = 5.0V, IC = 200mA,
RS = 1.0kW, f = 1.0kHz
NF
¾
(Note 6 & 9)
Ordering Information
Device
Packaging
SOT-26
Shipping
DMMT5551-7-F
DMMT5551S-7-F
3000/Tape & Reel
3000/Tape & Reel
SOT-26
Notes:
6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
7. Short duration pulse test used to minimize self-heating effect.
8. The DC Current Gain, h , (matched at I = 10mA and V = 5V) Collector Emitter Saturation Voltage, V , and Base
CE(SAT)
FE
C
CE
Emitter Saturation Voltage, V
are matched with typical matched tolerances of 1% and maximum of 2%.
BE(SAT)
9. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
E2
C2
E1
E1
C1
C2
K4T = DMMT5551S Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
K4R = DMMT5551 Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
K4R
K4T
M = Month ex: 9 = September
M = Month ex: 9 = September
C1
B1
B2
E2
B2
B1
Date Code Key
2006
2007
2008
2009
Year
2003
2004
2005
2010
2011
2012
T
U
V
W
Code
Q
R
S
X
Y
Z
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30436 Rev. 7 - 2
2 of 4
www.diodes.com
DMMT5551/DMMT5551S
400
350
300
250
0.15
0.14
0.13
0.12
0.11
0.10
Note 2
I
C = 10
IB
TA = 150°C
200
150
0.09
0.08
0.07
0.06
TA = 25°C
100
50
0
0.05
0.04
TA = -50°C
200
0
175
25
50
150
100 125
75
1
100
10
1000
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
IC, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
1.0
1000
VCE = 5V
VCE = 5V
0.9
TA = -50°C
0.8
0.7
TA = 150°C
100
TA = 25°C
0.6
TA = 25°C
TA = -50°C
0.5
0.4
10
TA = 150°C
0.3
0.2
1
0.1
10
1
100
100
10
1
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs
Collector Current
Fig. 4, Base Emitter Voltage
vs. Collector Current
1000
VCE = 5V
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs.
Collector Current
DS30436 Rev. 7 - 2
3 of 4
www.diodes.com
DMMT5551/DMMT5551S
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agreetoholdDiodesIncorporatedandallthecompanieswhoseproductsarerepresentedonour website, harmlessagainstalldamages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
PresidentofDiodes Incorporated.
DS30436 Rev. 7 - 2
4 of 4
DMMT5551/DMMT5551S
www.diodes.com
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