DMN100 [DIODES]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
| 型号： | DMN100 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总3页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN100
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
Extremely Low On-Resistance:
170mW @ VGS = 4.5V
SC-59
·
·
High Drain Current: 1.1A
Ideal for Notebook Computer, Portable Phone,
PCMCIA Cards, and Battery Powered Circuits
Dim
A
Min
0.30
1.40
2.50
0.85
0.30
1.70
2.70
¾
Max
0.50
1.80
3.00
1.05
0.70
2.10
3.10
0.10
1.40
0.70
0.35
A
D
B
TOP VIEW
C
B
C
Mechanical Data
·
·
D
G
S
E
Case: SC-59, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagrams
Weight: 0.008 grams (approx.)
D
G
E
G
H
H
·
J
M
K
K
1.00
0.55
0.10
·
·
·
J
L
L
M
Ordering Information, See Sheet 2
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Symbol
Maximum Ratings
Characteristic
DMN100
Units
VDSS
VGSS
30
V
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
±20
Continuous
Pulsed
± 1.1
± 4.0
ID
A
Pd
Total Power Dissipation
500
250
mW
K/W
°C
RqJA
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
Notes: 1. Pulse width £ 300ms, duty cycle £ 2%.
DS30049 Rev. 5 - 2
1 of 3
DMN100
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
V
GS = 0V, ID = 250mA
30
¾
¾
¾
¾
¾
¾
V
@ Tj = 25°C
@ Tj = 125°C
1.0
10
VDS = 24V, VGS = 0V
GS = ± 12V, VDS = 0V
µA
nA
IGSS
Gate-Body Leakage
V
± 100
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
VDS = 10V, ID =1.0mA
VGS = 4.5V, ID = 0.5A
VGS(th)
RDS (ON)
gFS
1.0
¾
¾
¾
3.0
V
W
S
0.170
0.240
Static Drain-Source On-Resistance
VGS = 10V, ID = 1.0A
VDS = 10V, ID =0.5A
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
1.3
2.4
¾
Ciss
Coss
Crss
Qg
¾
¾
¾
¾
¾
¾
150
90
¾
¾
¾
¾
¾
¾
pF
pF
pF
nC
nC
nC
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
30
5.5
0.8
1.3
V
V
DS = 24V, ID = 1.0A,
GS = 10V
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
¾
¾
¾
¾
10
25
15
45
¾
¾
¾
¾
ns
ns
ns
ns
tD(OFF)
Turn-Off Delay Time
V
V
DD = 10V, ID = 0.5A,
GS = 5.0V, RGEN = 50W
tr
tf
Turn-On Rise Time
Turn-Off Fall Time
SOURCE- DRAIN RATINGS (BODY DIODE)
Continuous Source Current
Pulse Source Current
IS
ISM
VSD
trr
¾
¾
¾
¾
¾
¾
¾
35
0.54
4.0
1.2
¾
A
A
¾
¾
IF = 1.0A, VGS = 0V
Forward Voltage
V
Reverse Recovery Time
IF = 1.0A, di/dt = 50A/ms
ns
Notes: 1. Pulse width £ 300ms, duty cycle £ 2%.
(Note 2)
Ordering Information
Device
Packaging
Shipping
DMN100-7
SC-59
3000/Tape & Reel
Notes:
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXX = Product Type Marking Code
X = Assembly Lot No.
XXX X
[0-9, A-Z, except G, I, J, O, Q, W]
DS30049 Rev. 5 - 2
2 of 3
DMN100
1.0
4.0
3.5
VGS = 10V
5.0V
4.5V
4.0V
3.5V
3.0
Vgs = 4.5V
2.5
2.0
1.5
3.0V
0.1
Vgs = 10V
1.0
0.5
2.5V
0
0.01
3
0
1
2
4
5
0
4
1
3
2
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
ID, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs Drain Current
4.0
0.30
0.25
0.20
VGS = 10V
TA = 25°C
3.5
3.0
2.5
2.0
VGS = 4.5V, RDS @ 0.5A
0.15
1.5
1.0
0.10
0.05
0
VGS = 10V, RDS @ 1.0A
0.5
0
-50
0
50
100
150
0
1
2
3
4
5
Tj, JUNCTION TEMPERATURE (°C)
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 3 On-Resistance vs Junction Temperature
Fig. 4 On-Resistance vs Gate-Source Voltage
DS30049 Rev. 5 - 2
3 of 3
DMN100
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