DMN100 [TYSEMI]
N-CHANNEL ENHANCEMENT MODE MOSFET ESD Protected Gate; N沟道增强型MOSFET ESD保护门
| 型号： | DMN100 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET ESD Protected Gate |
| 文件： | 总2页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
DMN100
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
•
•
Case: SC59
•
•
•
Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V
High Drain Current: 1.1A
Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
ESD Protected Gate
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.014 grams (approximate)
•
•
•
•
•
•
•
•
Drain
SC59
D
Gate
Gate
Protection
Diode
Source
G
S
Top View
Equivalent Circuit
Top View
ESD PROTECTED
Ordering Information (Note 3)
Part Number
DMN100-7-F
Case
SC59
Packaging
3000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
Marking Information
M11 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M11
M = Month (ex: 9 = September)
Date Code Key
Year
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
Code
T
U
V
W
X
Y
Z
A
B
C
D
E
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
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Product specification
DMN100
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
Value
30
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Continuous
Pulsed
VGSS
±20
1.1
4.0
A
ID
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
PD
Rθ
Value
500
Units
mW
K/W
°C
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
250
JA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
30
—
—
—
—
—
—
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
@ TJ = 25°C
1.0
10
μA
nA
VDS = 24V, VGS = 0V
@ TJ = 125°C
Gate-Body Leakage
IGSS
± 100
VGS = ± 12V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
1.0
—
—
—
3.0
V
Ω
S
VGS(th)
RDS (ON)
gFS
VDS = 10V, ID = 1.0mA
V
GS = 4.5V, ID = 0.5A
0.170
0.150
Static Drain-Source On-Resistance
VGS = 10V, ID = 1.0A
VDS = 10V, ID = 0.5A
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
1.3
2.4
⎯
—
—
—
—
—
—
150
90
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
Ciss
Coss
Crss
Qg
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
30
5.5
0.8
1.3
V
DS = 24V, ID = 1.0A,
Gate-to-Source Charge
Gate-to-Drain Charge
Qgs
Qgd
VGS = 10V
SWITCHING CHARACTERISTICS
Turn-On Delay Time
—
—
—
—
10
25
15
45
—
—
—
—
ns
ns
ns
ns
tD(ON)
Turn-Off Delay Time
tD(OFF)
VDD = 10V, ID = 0.5A,
Turn-On Rise Time
V
GS = 5.0V, RGEN = 50Ω
tr
tf
Turn-Off Fall Time
SOURCE-DRAIN RATINGS (BODY DIODE)
Continuous Source Current
Pulse Source Current
—
—
—
—
—
—
—
35
0.54
4.0
1.2
—
A
A
—
—
IS
ISM
VSD
trr
Forward Voltage
V
IF = 1.0A, VGS = 0V
Reverse Recovery Time
ns
IF = 1.0A, di/dt = 50A/μs
Notes:
2. Pulse width ≤ 300μs, duty cycle ≤ 2%.
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