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BFS17TA [DIODES]

RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN;
BFS17TA
型号： BFS17TA
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

晶体 晶体管 光电二极管 放大器 局域网
文件： 总2页 (文件大小：50K)
中文：  中文翻译
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BFS17L  
BFS17H  
SOT23 NPN SILICON PLANAR  
RF TRANSISTORS  
ISSUE 4 – MARCH 2001  
E
C
PARTMARKING DETAILS —  
BFS17L - E1L  
BFS17H - E1H  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
25  
Collector-Emitter Voltage  
Emitter-Base Voltage  
15  
V
2.5  
50  
V
Peak Pulse Current  
mA  
mA  
mW  
°C  
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
25  
Ptot  
330  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT CONDITIONS.  
Collector Cut-Off  
Current  
ICBO  
10  
10  
nA  
µA  
VCB=10V, IE=0  
CB=10V, IE=0,  
Tamb = 100°C  
V
Static Forward Current hFE  
Transfer Ratio  
BFS17L  
BFS17H  
25  
70  
20  
100  
200  
125  
IC=2.0mA, VCE=1.0V  
IC=2.0mA, VCE=1.0V  
IC=25mA, VCE=1.0V  
Transition  
Frequency  
fT  
1.0  
1.3  
GHz  
GHz  
IC=2.0mA, VCE=5.0V  
f=500MHz  
IC=25mA, VCE=5.0V  
f=500MHz  
Feedback Capacitance  
Output Capacitance  
Input Capacitance  
Noise Figure  
-Cre  
Cobo  
Cibo  
N
0.85  
pF  
pF  
pF  
dB  
IC=2.0mA, VCE=5V, f=1MHz  
VCB=10V, f=1MHz  
1.5  
2.0  
VEB=0.5V, f=1MHz  
4.5  
-45  
IC=2.0mA, VCE=5.0V  
RS=50Ω, f=500MHz  
Intermodulation  
Distortion  
dim  
dB  
IC=10mA, VCE=6.0V  
RL=37.5Ω,Tamb=25°C  
Vo=100mV at fp=183MHz  
Vo=100mV at fq=200MHz  
measured at f(2q-p)=217MHz  
Spice parameter data is available upon request for this device  
TBA  
BFS17L  
BFS17H  
TYPICAL CHARACTERISTICS  
80  
60  
3
f=400MHz  
VCE=10V  
2
1
0
40  
20  
V
CE=10V  
CE=5V  
V
100m  
10m  
0.1  
1
10  
100  
1000  
1µ  
10µ  
1m  
100µ  
I - Collector Current (mA)  
C
IC  
- Collector Current (A)  
FE v I  
h
C
v I  
fT C  
f=1MHz  
2.0  
1.5  
1.0  
0.5  
0
10  
20  
30  
VCE - (V)  
C
RE v VCE  

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