1N5711W [DIODES]
SURFACE MOUNT SCHOTTKY BARRIER DIODE; 表面贴装肖特基二极管
| 型号： | 1N5711W |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 文件： | 总3页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5711W
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
·
·
Low Forward Voltage Drop
Guard Ring Construction for Transient
Protection
SOD-123
·
·
Fast Switching Time
Dim
A
Min
3.55
2.55
Max
3.85
2.85
Low Reverse Capacitance
B
H
D
J
C1.40
1.70
Mechanical Data
G
D
E
G
H
J
—
1.35
·
·
Case: SOD-123, Plastic
a
0.55 Typical
0.25
0.11 Typical
A
B
Case material - UL Flammability Rating
Classification 94V-0
—
·
·
Moisture sensitivity: Level 1 per J-STD-020A
E
C
—
0.10
Terminals: Solderable per MIL-STD-202, Method
208
a
0°
8°
·
·
·
·
·
Polarity: Cathode Band
All Dimensions in mm
Marking: Date Code and Type Code, See Page 3
Type Code: SA
Weight: 0.01 grams (approx.)
Ordering Information: See Below
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
1N5711W
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
70
V
VR(RMS)
IFM
RMS Reverse Voltage
49
15
V
mA
mW
°C/W
°C
Maximum Forward Current
Pd
Power Dissipation (Note 1)
333
300
RqJA
Tj
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
-55 to +150
TSTG
°C
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Reverse Leakage Current (Note 2)
Symbol
V(BR)R
IR
Min
70
Typ
¾
Max
¾
Unit
V
Test Condition
I
R = 10mA
VR = 50V
¾
¾
200
nA
IF = 1.0mA
IF = 15mA
0.41
1.00
VF
CT
trr
Forward Voltage Drop (Note 2)
Total Capacitance
¾
¾
¾
¾
¾
¾
V
VR = 0V, f = 1.0MHz
2.0
1.0
pF
ns
IF = IR= 5.0mA
Irr = 0.1 x IR, RL = 100W
Reverse Recovery Time
(Note 3)
Ordering Information
Device
1N5711W-7
Packaging
SOD-123
Shipping
3000/Tape and Reel
Note:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS11015 Rev. 4 - 2
1 of 3
1N5711W
350
300
250
200
150
100
50
10
1.0
0.1
0.01
0
0
25
125
150
50
100
75
0
0.5
1.0
VF, FORWARD VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Fig.1 Power Derating Curve
Fig. 2 Typical Forward Characteristics
100
100
10
Tj = 150°C
Tj = 125°C
80
60
40
20
0
Tj = 100°C
1
Tj = 75°C
Tj = 50°C
0.1
Tj = 25°C
0.01
20
40
50
0
10
30
0
0.5
1
VR, REVERSE VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
Fig. 4 Typical Reverse Characteristics
Fig. 3 Typical Forward Characteristics
2
Tj = 25°C
1
0
0
10
20
30
40
50
VR, REVERSE VOLTAGE (V)
Fig. 5 Typ. Junction Capacitance vs Reverse Voltage
DS11015 Rev. 4 - 2
2 of 3
1N5711W
Marking Information
SA = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
SA
M = Month (ex: 9 = September)
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
Code
J
K
L
M
N
P
R
S
Month
Code
Jan
Feb
March
Apr
MayJun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS11015 Rev. 4 - 2
3 of 3
1N5711W
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