1N5711WS-7
更新时间：2024-09-18 13:02:44
品牌：DIODES
描述：Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, PLASTIC PACKAGE-2
概述
规格参数
数据手册
替代型号1N5711WS-7 概述
Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, PLASTIC PACKAGE-2 RF二极管 整流二极管
1N5711WS-7 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Obsolete |
| 包装说明： | R-PDSO-G2 | 针数： | 2 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.70 | 风险等级： | 5.42 |
| 配置： | SINGLE | 二极管元件材料： | SILICON |
| 二极管类型： | RECTIFIER DIODE | 最大正向电压 (VF)： | 0.41 V |
| JESD-30 代码： | R-PDSO-G2 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 2 | 最高工作温度： | 125 °C |
| 最大输出电流： | 0.015 A | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 235 | 最大功率耗散： | 0.15 W |
| 认证状态： | Not Qualified | 最大重复峰值反向电压： | 70 V |
| 最大反向恢复时间： | 0.001 µs | 子类别： | Rectifier Diodes |
| 表面贴装： | YES | 技术： | SCHOTTKY |
| 端子面层： | Matte Tin (Sn) | 端子形式： | GULL WING |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | 10 |
| Base Number Matches： | 1 |
1N5711WS-7 数据手册
通过下载1N5711WS-7数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载SPICE MODEL: 1N5711WS
1N5711WS
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
•
•
•
•
•
•
Low Forward Voltage Drop
Guard Ring Construction for Transient Protection
Fast Switching Speed
Low Capacitance
Surface Mount Package Ideally Suited for Automatic Insertion
Lead Free/RoHS Compliant (Note 3)
SOD-323
Dim
A
Min
2.30
1.60
1.20
Max
2.70
1.80
1.40
B
C
D
1.05 Typical
Mechanical Data
E
0.25
0.20
0.10
0.35
0.40
0.15
•
•
Case: SOD-323
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
G
H
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
J
0.05 Typical
0° 8°
α
All Dimensions in mm
•
•
•
•
Polarity: Cathode Band
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.004 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
70
V
RMS Reverse Voltage
VR(RMS)
IFM
49
15
V
mA
mW
°C/W
°C
Forward Continuous Current
Power Dissipation (Note 1)
PD
150
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
650
RθJA
Tj
-55 to +125
-55 to +150
TSTG
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Symbol
V(BR)R
IR
Min
70
Typ
⎯
Max
⎯
Unit
V
Test Conditions
IR = 10μA
Reverse Leakage Current (Note 2)
200
nA
VR = 50V
⎯
⎯
0.41
1.00
IF = 1.0mA
IF = 15mA
Forward Voltage Drop
VF
CT
trr
V
⎯
⎯
⎯
⎯
⎯
⎯
Total Capacitance
2.0
1.0
pF
ns
VR = 0V, f = 1.0MHz
IF = IR = 5.0mA,
Irr = 0.1 x IR, RL = 100Ω
Reverse Recovery Time
Note:
1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
DS31033 Rev. 10 - 2
1 of 3
1N5711WS
© Diodes Incorporated
www.diodes.com
DS31033 Rev. 10 - 2
2 of 3
1N5711WS
© Diodes Incorporated
www.diodes.com
Ordering Information (Note 4)
Packaging
Shipping
Device
1N5711WS-7-F
SOD-323
3000/Tape & Reel
Notes:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
SA = Product Type Marking Code
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS31033 Rev. 10 - 2
3 of 3
1N5711WS
© Diodes Incorporated
www.diodes.com
1N5711WS-7 CAD模型
引脚图
封装焊盘图
1N5711WS-7 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| 1N5711WS-7-F | DIODES | SURFACE MOUNT SCHOTTKY BARRIER DIODE | 完全替代 |
|
| CMDD6263 | CENTRAL | SUPERminiTM HIGH VOLTAGE SCHOTTKY DIODE | 类似代替 |
|
| CMDD6263TR | CENTRAL | 暂无描述 | 功能相似 |
|
1N5711WS-7 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 1N5711WS-7-F | DIODES | SURFACE MOUNT SCHOTTKY BARRIER DIODE | 获取价格 |
|
| 1N5711WS-TP | MCC | Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2 | 获取价格 |
|
| 1N5711WS_08 | DIODES | SURFACE MOUNT SCHOTTKY BARRIER DIODE | 获取价格 |
|
| 1N5711WS_1 | DIODES | SURFACE MOUNT SCHOTTKY BARRIER DIODE | 获取价格 |
|
| 1N5711W_ | DIODES | SURFACE MOUNT SCHOTTKY BARRIER DIODE | 获取价格 |
|
| 1N5711W_08 | DIODES | SURFACE MOUNT SCHOTTKY BARRIER DIODE | 获取价格 |
|
| 1N5711W_08 | BL Galaxy Electrical | Surface mount schottky barrier diode | 获取价格 |
|
| 1N5711X | MICROSEMI | Rectifier Diode, Schottky, 1 Element, Silicon | 获取价格 |
|
| 1N5711_15 | GOOD-ARK | Small-Signal Diode Schottky Diodes | 获取价格 |
|
| 1N5712 | AGILENT | Schottky Barrier Diodes for General Purpose Applications | 获取价格 |
|
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