1N5711WS [DIODES]
SURFACE MOUNT SCHOTTKY BARRIER DIODE; 表面贴装肖特基二极管
| 型号： | 1N5711WS |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 文件： | 总3页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5711WS
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
·
·
Low Forward Voltage Drop
Guard Ring Construction for Transient
Protection
SOD-323
Dim
A
Min
2.30
1.60
1.20
Max
2.70
1.80
1.40
·
·
·
Fast Switching Speed
Low Capacitance
Surface Mount Package Ideally Suited for
Automatic Insertion
B
D
H
J
C
G
Mechanical Data
·
D
1.05 Typical
a
A
B
E
0.25
0.20
0.10
0.35
0.40
0.15
Case: SOD-323, Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: SA
Weight: 0.004 grams (approx.)
·
G
H
C
E
·
·
J
0.05 Typical
0° 8°
a
All Dimensions in mm
·
·
·
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
1N5711WS
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
70
V
VR(RMS)
IFM
RMS Reverse Voltage
49
15
V
mA
mW
°C/W
°C
Forward Continuous Current
Pd
Power Dissipation (Note 1)
150
RqJA
Tj
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
650
-55 to +125
-55 to +150
TSTG
°C
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Reverse Leakage Current (Note 2)
Symbol
V(BR)R
IR
Min
70
Typ
¾
Max
¾
Unit
V
Test Condition
I
R = 10mA
VR = 50V
¾
¾
200
nA
IF = 1.0mA
IF = 15mA
0.41
1.00
VF
CT
trr
Forward Voltage Drop (Note 2)
Total Capacitance
¾
¾
¾
¾
¾
¾
V
VR = 0V, f = 1.0MHz
2.0
1.0
pF
ns
IF = IR= 5.0mA
Irr = 0.1 x IR, RL = 100W
Reverse Recovery Time
Ordering Information(Note 3)
Device
Packaging
Shipping
1N5711WS-7
3000/Tape and Reel
SOD-323
Note:
1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS31033 Rev. 4 - 2
1 of 3
1N5711WS
200
10
1.0
RθJA = 625ºC/W
150
100
0.1
50
0
0.01
50
0
75
100
150
0
1.0
0.5
25
125
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve
VF, FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
80
60
40
20
0
100
10
Tj = 150°C
Tj = 125°C
Tj = 100°C
1
Tj = 75°C
Tj = 50°C
Tj = 25°C
0.1
0.01
0
0.5
1
20
40
50
0
10
30
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Reverse Characteristics
Fig. 3 Typical Forward Characteristics
2
1
0
f = 1MHz
0
10
20
30
40
50
VR, REVERSE VOLTAGE (V)
Fig. 5 Total Capacitance vs Reverse Voltage
DS31033 Rev. 4 - 2
2 of 3
1N5711WS
Marking Information
SA = Product Type Marking Code
SA
Cathode Band
DS31033 Rev. 4 - 2
3 of 3
1N5711WS
相关型号：
1N5711WS-7
Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, PLASTIC PACKAGE-2
DIODES
1N5711WS-TP
Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
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