1N5711WS [TYSEMI]
Low Forward Voltage Drop Guard Ring Construction for Transient Prote; 低正向压降保护环结构瞬态Prote
| 型号： | 1N5711WS |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low Forward Voltage Drop Guard Ring Construction for Transient Prote |
| 文件： | 总1页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
1N5711WS
SOD-323
Unit: mm
+0.1
-0.1
+0.05
0.85
-0.05
1.7
Features
Low Forward Voltage Drop
Guard Ring Construction for Transient Prote
Fast Switching Speed
+0.1
-0.1
2.6
1.0max
Low Capacitance
0.475
0.375
Surface Mount Package ldeally Suited for Automatic Insertion
Absolute Maximum Ratings Ta = 25
Paramater
Peak Repetitive Reverse voltage
Working Peak Reverse Voltage
DC Blocking Volatge
Symbol
Value
70
Unit
V
VRRM
VRWM
VR
RMS Reverse Voltage
VR(RMS)
IFM
49
15
V
Forward Continuous Current
Power Dissipation (Note1)
mA
mW
/W
Pd
150
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Storage Temperature Range
Note:
RèJA
Tj
650
-55 to+125
-55 to+150
TSTG
1. Part mounted on FR-4 PC board with recommended pad layout.
Electrical Characteristics Ta = 25
Characteristic
Symbol
V(BR)R
IR
Test Condition
IR = 10
Min
70
TYP
Max
Unit
Reverse BreakdownVoltage (Note 2)
Reverse Leakage Current (Note 2)
V
A
200
0.41
1.00
2.0
nA
VR = 50 V
IF = 1.0 mA
Forward Voltage Drop (Note 2)
VF
CT
trr
V
pF
ns
IF = 15 mA
Total Capacitance
VR = 0 V, f = 1.0 MHz
IF =IR = 5.0 mA
Irr = 0.1 x IR, RL = 100
Reverse Recovery Time
1.0
Note:
2. Measured with IF =IR = 10 mA,IRR = 0.1 x IR, RL = 100
.
Marking
Marking
SA
4008-318-123
1 of 1
http://www.twtysemi.com
sales@twtysemi.com
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