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BDX63C [COMSET]

NPN SILICON DARLINGTONS; NPN硅DARLINGTONS
BDX63C
型号： BDX63C
厂家： COMSET SEMICONDUCTOR    COMSET SEMICONDUCTOR
描述：

NPN SILICON DARLINGTONS
NPN硅DARLINGTONS

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NPN SILICON DARLINGTONS  
General purpose darlingtons designed for power amplifier and switching  
applications.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
BDX63  
60  
80  
100  
120  
80  
BDX63A  
BDX63B  
BDX63C  
BDX63  
Collector-Emitter Voltage  
VCEO  
V
BDX63A  
BDX63B  
BDX63C  
100  
120  
140  
Collector-EmitterVoltage  
Emitter-Base Voltage  
VBE=-1.5 V  
VCEV  
V
V
BDX63  
BDX63A  
BDX63B  
BDX63C  
BDX63  
BDX63A  
BDX63B  
BDX63C  
BDX63  
VEBO  
5.0  
8
IC(RMS)  
Collector Current  
IC  
A
BDX63A  
BDX63B  
BDX63C  
12  
ICM  
BDX63  
BDX63A  
BDX63B  
BDX63C  
BDX63  
BDX63A  
BDX63B  
BDX63C  
Base Current  
0.15  
90  
IB  
A
Watts  
W/°C  
Power Dissipation  
@ TC = 25°  
PT  
BDX63  
Junction Temperature  
Storage Temperature  
TJ  
TS  
BDX63A  
BDX63B  
BDX63C  
-55 to +200  
°C  
Page 1 of 4  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
BDX63  
BDX63A  
BDX63B  
BDX63C  
Thermal Resistance, Junction to Case  
RthJ-C  
1.94  
°C/W  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Test Condition(s)  
Symbol  
Ratings  
Min Typ Mx Unit  
BDX63  
BDX63A  
60  
80  
-
-
-
-
-
-
-
-
Collector-Emitter  
Breakdown Voltage (*)  
IC=0.1 A, IB=0, L=25mH  
V
VCEO(SUS)  
BDX63B 100  
BDX63C 120  
VCE=30 V  
VCE=40 V  
VCE=50 V  
VCE=60 V  
BDX63  
-
-
-
-
-
-
-
-
Collector Cutoff Current  
Emitter Cutoff Current  
BDX63A  
BDX63B  
BDX63C  
BDX63  
BDX63A  
BDX63B  
BDX63C  
0.5  
mA  
mA  
ICEO  
VBE=5 V  
-
-
5.0  
IEBO  
VCBO=60 V  
VCBO=400 V  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2  
2
BDX63  
T
CASE=200°C  
VCBO=80 V  
VCBO=50 V  
0.2  
2
BDX63A  
Collector-Base Cutoff  
Current  
T
CASE=200°C  
-
ICBO  
VCBO=100 V  
VCBO=60 V  
TCASE=200°C  
0.2  
2
BDX63B  
BDX63C  
VCBO=120 V  
0.2  
2
VCBO=70 V  
TCASE=200°  
-
BDX63  
Collector-Emitter saturation  
Voltage (*)  
BDX63A  
BDX63B  
BDX63C  
BDX63  
IC=3.0 A, IB=12 mA  
-
-
-
2
-
V
V
VCE(SAT)  
Forward Voltage (pulse  
method)  
BDX63A  
BDX63B  
BDX63C  
IF=3 A  
1.2  
VF  
Page 2 of 4  
BDX63  
Base-Emitter Voltage (*)  
BDX63A  
BDX63B  
BDX63C  
BDX63  
BDX63A  
BDX63B  
BDX63C  
BDX63  
BDX63A  
BDX63B  
BDX63C  
BDX63  
BDX63A  
BDX63B  
BDX63C  
BDX63  
BDX63A  
BDX63B  
BDX63C  
BDX63  
BDX63A  
BDX63B  
BDX63C  
IC=3.0 A, VCE=3V  
VCE=3 V, IC=3 A  
-
-
2.5  
V
VBE  
Fhfe  
fT  
-
Cut-off frequency  
100  
7
-
-
-
-
-
kHz  
MHz  
VCE=3 V, IC=3 A, f=1 MHz  
VCE=3 V, IC=0.5 A  
VCE=3 V, IC=3 A  
-
Transition Frequency  
-
1000  
-
2500  
-
D.C. current gain (*)  
-
hFE  
VCE=3 V, IC=8 A  
2600  
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%  
(1) collector-Emitter voltage limited et VCEci = V  
rated by  
an auxiliary circuit  
MECHANICAL DATA CASE TO-3  
DIMENSIONS  
mm  
inches  
1,004  
1,53  
1,18  
0,68  
0,43  
0,46  
0,34  
0,6  
A
B
C
D
E
G
H
L
25,51  
38,93  
30,12  
17,25  
10,89  
11,62  
8,54  
1,55  
19,47  
1
M
N
P
0,77  
0,04  
0,16  
4,06  
Pin 1 :  
Pin 2 :  
Case :  
Base  
Emitter  
Collector  
Page 3 of 4  
Page 4 of 4  

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