2N6251 [COMSET]
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS; 高压硅NPN功率晶体管
| 型号： | 2N6251 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | HIGH VOLTAGE NPN SILICON POWER TRANSISTORS |
| 文件： | 总3页 (文件大小：371K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N6249 – 2N6250 – 2N6251
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
The 2N6249 – 2N6250 – 2N6251 are NPN silicon transistors in Jedec TO-3.
They are designed for high voltage inverters, switching regulators and line operated amplifier
applications. Especially well suited for switching power supply applications.
•
•
•
•
High Voltage Breakdown Rating
Low Saturation Voltages
Fast Switching Capability
High Es/b Energy Handling Capability
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
2N6249
200
275
350
225
300
375
300
375
450
#Collector-Emitter Voltage (1)
2N6250
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
VCEO
V
#Collector-Emitter Voltage (1)
VCER
V
RBE=50Ω
Collector-Base Voltage (1)
Emitter-Base Voltage
VCB
VEB
Vdc
Vdc
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
6.0
15
30
10
20
25
50
Continuous
(1)
Collector Current
Base Current
IC
IB
IE
Adc
Adc
Adc
1/3
Peak
Continuous
(1)
Peak
Continuous
Peak
Emitter Current
COMSET SEMICONDUCTORS
2N6249 – 2N6250 – 2N6251
2N6249
2N6250
2N6251
2N6249
@ TC = 25°
175
100
Watts
Total Power Dissipation
@ TC = 100° 2N6250
Pt
2N6251
2N6249
25° 2N6250
2N6251
Derate
above
(1)
1.0
W/°C
°C
2N6249
Junction Temperature (1)
Storage Temperature (1)
2N6250
TJ
-65 to +200
-65 to +200
2N6251
2N6249
2N6250
Tstg
°C
2N6251
(1) This data guaranteed in addition to JEDEC registered data.
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
Thermal Resistance, Junction to Case
RthJC
1
°C/W
Maximum Lead Temperature for Soldering
Purposes : 1/8’’ from Case for 5 Secondes
TL
275
°C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
VCEO(SUS)
Ratings
Min Typ Mx Unit
2N6249 200
2N6250 275
2N6251 350
2N6249 225
2N6250 300
2N6251 375
-
-
-
-
-
-
-
Collector-Emitter
IC=200 mAdc, IB=0
Vdc
Sustaining Voltage
-
Collector-Emitter
V
-
-
VCER(SUS)
IC=0.2 Adc, RBE=50Ω
Sustaining Voltage
-
-
-
-
-
-
VCE=150 Vdc, IB=0
VCE=225 Vdc, IB=0
VCE=300 Vdc, IB=0
VCE=225 Vdc, VEB(off)=1.5 Vdc
2N6249
2N6250
2N6251
-
-
-
-
5.0
5.0 mAdc
5.0
5.0
Collector-Emitter Current
Collector Cutoff Current
ICEO
2N6249
2N6250
2N6251
VCE=225 Vdc, VEB(off)=1.5 Vdc,
-
-
-
-
-
-
-
-
-
-
10
TC = 150°C
VCE=300 Vdc, VEB(off)=1.5 Vdc
5.0
mAdc
ICEX
VCE=300 Vdc, VEB(off)=1.5 Vdc,
10
TC = 150°C
VCE=375 Vdc, VEB(off)=1.5 Vdc
5.0
10
VCE=375 Vdc, VEB(off)=1.5 Vdc,
TC = 150°C
COMSET SEMICONDUCTORS
2/3
2N6249 – 2N6250 – 2N6251
2N6249
2N6250
2N6251
2N6249 5.8
2N6250 5.8
2N6251 5.8
2N6249 2.5
2N6250 2.5
2N6251 2.5
VBE=6.0 Vdc, IC=0
Emitter Cutoff Current
-
-
1.0 mAdc
-
IEBO
Ssecond Breakdown
Collector Current with
base forward biased
t=1.0S non-repetitive
Ssecond Breakdown
Energy with base reverse
biased t=1.0S non-
repetitive
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VCE=30 Vdc
-
-
-
-
-
Vdc
Is/b
IC= 10 A, VBE(off) = 4.0Vdc,
L = 50 µH
mJ
Es/b
2N6249 10
2N6250 8.0
2N6251 6.0
50
IC=10 Adc, VCE=3.0 Vdc
DC Current Gain
50
-
hFE
50
IC=10 Adc, IB=1 Adc
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
-
-
-
-
-
-
1.5
1.5
1.5
2.5
2.5
2.5
Collector-Emitter
IC=10 Adc, IB=1.25 Adc
IC=10 Adc, IB=1.67 Adc
IC=10 Adc, IB=1 Adc
Vdc
Vdc
VCE(SAT)
VBE(SAT)
saturation Voltage (1)
Base-Emitter saturation
Voltage (1)
IC=10 Adc, IB=1.25 Adc
IC=10 Adc, IB=1.67 Adc
(1) Mesured on a curve tracer (60 Hz full-wave rectified sine wave ).
Test Condition(s)
Symbol
Ratings
Min Typ Mx Unit
Current Gain – Bandwith
Product
VCE=10 Vdc, IC=1.0 Adc,
2.5
-
-
MHz
fT
ftest = 1.0 Mhz
VCC= 200 Vdc, IC= 10 A, Duty Cycle <= 2.0% tp= 100 µs
Rise Time
Storage Time
Fall Time
IB1 = IB2=1.0 Adc
2N6259
2N6250
2N6251
-
-
-
-
-
-
2.0
3.5
1.0
tr
ts
tf
IB1 = I =1.25 Adc
µs
IB1 = IB2=1.67 Adc
B2
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
A
B
C
D
E
G
H
L
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
M
N
P
0,77
0,04
0,16
4,06
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequeDncaetsaoafruesseuobfjesuccthtoincfohramnagtieonwnitohrofourtenrorotrisceth.at could appear.
COMSET SEMICONDUCTORS
3/3
相关型号：
2N6253LEADFREE
Power Bipolar Transistor, 15A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
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