CHT846BWPT [CHENMKO]
NPN General Purpose Transistor; NPN通用晶体管
| 型号： | CHT846BWPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | NPN General Purpose Transistor |
| 文件： | 总4页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT846BWPT
SURFACE MOUNT
NPN General Purpose Transistor
VOLTAGE 65 Volts CURRENT 0.1 Ampere
APPLICATION
* AF input stages and driver applicationon equipment.
* Other general purpose applications.
FEATURE
* Surface mount package. (SC-70/SOT-323)
* High current gain.
SC-70/SOT-323
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
0.65
1.3±0.1
2.0±0.2
0.65
0.3±0.1
MARKING
1.25±0.1
* HFE(Q):RH
* HFE(R):RI
* HFE(S):RJ
0.8~1.1
0.05~0.2
0~0.1
0.1Min.
3
2.0~2.45
CIRCUIT
1
2
SC-70/SOT-323
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
80
UNIT
−
−
V
V
VCEO
collector-emitter voltage
open base
65
−
−
6
VEBO
IC
emitter-base voltage
collector current (DC)
open collector
V
A
0.1
0.3
0.4
−
−
PC
Collector power dissipation
W
Note2
Tstg
Tj
storage temperature
junction temperature
°C
°C
−55
+150
150
−
Note
1. Transistor mounted on an FR4 printed-circuit board.
2. When mounted on a 7X5X0.6mm ceramic board.
2004-10
RATING CHARACTERISTIC ( CHT846BWPT)
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
UNIT
nA
MIN. Typ. MAX.
=
IE 0; VCB = 30 V
IC = 0; VCB = 30 V; TA = 150 O
15
−
−
80
65
6
−
−
−
−
ICBO
collector cut-off current
5
−
−
−
uA
V
V
C
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
=10uA
IC
IC =10mA
=1uA
BVCBO
BVCEO
BVEBO
hFE
V
IE
V
−
−
CE/IC =5V/2 mA
IC 10 mA ; IB = 0.5 mA
110
−
800
250
current transfer ratio
DC
=
=
mV
−
−
collector-emitter saturation
voltage
VCEsat
IC
100 mA ; IB= 5 mA
−
600 mV
IC = 10 mA;V
V
VBE(on)
Cib
CE= 5.0 V
=0.5V
0.58
−
−
0.77
base-emitter saturation voltage
emitter input capacitance
collector output capacitance
transition frequency
I
pF
C = 0; VCB
; f = 1 MH
8
z
z
−
I
=-10V
pF
E = 0; VCB
; f = 1 MH
Cob
fT
−
−
−
3
f = 100 MHz
IE = 20 mA; VCE = 5 V;
200
−
MHz
Note
1. Pulse test: t p ≤ 300 µs; δ ≤ 0.02.
2. hFE: Classification Q: 110 to 220, R: 200 to 450, S: 420 to 800
RATING CHARACTERISTIC CURVES ( CHT846BWPT)
llector-Emitter Saturation
fig2.Co
Voltage vs Collector Current
fig1.Griunded emitter output characteristics
100
Ta=25OC
IC/IB=10
600
500
400
0.3
0.2
300
200
50
0.1
0
100
Ta=25OC
10
IB=0uA
0
5
0
10
100
1000
1.0
COLLECTOR-EMITTERVOLTAGE : VCE(V)
IC - COLLECTOR CURRENT (mA)
RATING CHARACTERISTIC CURVES ( CHT846BWPT)
fig3.DC current gain VS. collector
fig4.DC current gain VS. collector
current ( 1 )
current ( 2 )
Ta=25OC
1000
Ta=25OC
1000
Ta=125OC
25OC
-55OC
VCE=10V
100
10
100
10
1V
1
10
100
1
10
100
1000
1000
0.1
0.1
IC - COLLECTO CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
fig6.Base-emitter saturation voltage
VS. collector current
fig5.AC current gain VS. collector current
1.8
1.6
Ta=25OC
Ta=25OC
1000
IC/IB=10
VCE=10V
f=1KHZ
1.2
0.8
100
10
0.4
0
10
100
1000
1
10
100
1.0
1000
0.1
IC - COLLECTO CURRENT (mA)
IC - COLLECTO CURRENT (mA)
fig7.Grounded emitter propagation
characteristics
fig8.Turn-on time VS. collector current
1.8
Ta=25OC
Ta=25OC
1000
1.6
VCE=10V
IC/IB=10
1.2
10 0
10
0.8
0.4
0
VCC=30V
10V
1000
1
10
100
1000
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
RATING CHARACTERISTIC CURVES ( CHT846BWPT)
fig9.Rise time VS. collector current
fig10.Fall time VS. collector current
500
100
Ta=25OC
Vcc=30V
IC/IB=10
Ta=25OC
Vcc=30V
500
100
10
5
10
100
IC - COLLECTO CURRENT (mA)
1000
1.0
10
1.0
100
IC - COLLECTO CURRENT (mA)
1000
10
fig11.Input / output capacitance VS. voltage
Ta=25OC
f=1MHZ
100
Cib
10
Cob
1
1.0
10
0.1
100
REVERSE BIAS VOLTAGE(V)
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