CHT84SPT [CHENMKO]
Dual P-Channel Enhancement Mode Field Effect Transistor; 双P沟道增强型场效应晶体管
| 型号： | CHT84SPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总3页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT84SPT
SURFACE MOUNT
Dual P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 50 Volts CURRENT 0.13 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SC-88/SOT-363
FEATURE
* Small surface mounting type. (SC-88/SOT-363)
* High density cell design for low RDS(ON).
* Suitable for high packing density.
(6)
(1)
* Rugged and reliable.
0.65
2.0~2.2
0.65
* High saturation current capability.
1.2~1.4
* Voltage controlled small signal switch.
* Internal isolated two P-Channel FET in one package.
(3)
(4)
0.15~0.35
CONSTRUCTION
1.15~1.35
* P-Channel Enhancement
MARKING
* VS
0.08~0.15
0.8~1.1
0~0.1
0.1 Min.
6
1
4
3
2.15~2.45
CIRCUIT
SC-88/SOT-363
Dimensions in millimeters
Absolute Maximum Ratings TA = 25°C unless otherwise noted
CHT84SPT
Symbol
Parameter
Units
VDSS
Drain-Source Voltage
-50
V
±20
V
A
VGSS
Gate-Source Voltage - Continuous
Maximum Drain Current - Continuous
ID
-0.13
PD
Maximum
mW
°C
Power Dissipation
300
-55 to 150
TJ,TSTG
Operating and Storage Temperature Range
Thermal characteristics
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
417
2004-03
RATING CHARACTERISTIC CURVES ( CHT84SPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA
Zero Gate Voltage Drain Current VDS = -50 V, VGS = 0 V
VDS = -25 V, VGS = 0 V
-50
-75
V
-15
-100
10
µA
nA
nA
nA
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
-10
ON CHARACTERISTICS (Note 1)
VGS(th)
RDS(ON)
gFS
Gate Threshold Voltage
VDS = VGS, ID = 1.0 mA
-0.8
-1.6
-2.0
V
6
10
Static Drain-Source On-Resistance VGS = -5.0 V, ID = 0.1 A
Ω
Forward Transconductance
VDS = -25 V, ID = 100 mA
0.05
S
DYNAMIC CHARACTERISTICS
pF
nS
Ciss
Coss
Crss
ton
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
45
25
12
VDD = -30 V
ID = -270 mA, VGS = -10 V,
10
toff
Turn-Off Time
18
RGEN = 50
Ω
RATING CHARACTERISTIC CURVES ( CHT84SPT )
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation
with Temperature
600
15
12
500
400
VGS = 5V
4.5V
V GS =-10V
9.0
6.0
ID = -130mA
300
200
100
0
3.5V
3.0V
3.0
0
2.5V
0
1
2
3
4
5
-50
-25
0
T
25
50
75
100
125
150
,
JUNCTION TEMPERATURE (°C)
J
VDS , DRAIN-SOURCE VOLTAGE (V)
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