CHT848BWPT [CHENMKO]
NPN General Purpose Transistor; NPN通用晶体管
| 型号： | CHT848BWPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | NPN General Purpose Transistor |
| 文件： | 总3页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT848BWPT
SURFACE MOUNT
NPN General Purpose Transistor
VOLTAGE 30 Volts CURRENT 0.1 Ampere
APPLICATION
* AF input stages and driver applicationon equipment.
* Other general purpose applications.
FEATURE
* Surface mount package. (SC-70/SOT-323)
SC-70/SOT-323
* High current gain.
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
0.65
1.3±0.1
2.0±0.2
0.65
0.3±0.1
MARKING
1.25±0.1
* HFE(P):RN
* HFE(Q):RO
* HFE(Y):RP
0.8~1.1
0.05~0.2
0~0.1
0.1Min.
3
2.0~2.45
CIRCUIT
1
2
SC-70/SOT-323
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
30
UNIT
−
−
V
V
VCEO
collector-emitter voltage
open base
30
−
−
5
VEBO
IC
emitter-base voltage
collector current (DC)
open collector
V
A
0.1
0.2
0.3
−
−
PC
Collector power dissipation
W
Note2
Tstg
Tj
storage temperature
junction temperature
°C
°C
−65
+150
150
−
Note
1. Transistor mounted on an FR4 printed-circuit board.
2. When mounted on a 7X5X0.6mm ceramic board.
2004-10
RATING CHARACTERISTIC ( CHT848BWPT)
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
collector cut-off current
CONDITIONS
0; VCB = 30 V
UNIT
nA
MIN. Typ. MAX.
−
−
−
=
15
ICBO
IE
V
CE/IC =5V/2 mA
FE
h
DC current transfer ratio
110
800
=
=
700
900
90
IC 10 mA ; IB = 0.5 mA
−
−
−
−
−
collector-base saturation
voltage
mV
mV
mV
VBEsat
VCEsat
IC
100 mA ; IB= 5 mA
250
collector-emitter saturation
voltage
=
IC 10 mA ; IB = 0.5 mA
=
mV
V
IC
−
600
0.70
0.72
200
100 mA ; IB= 5 mA
IC = 2 mA;V
CE= 5.0 V
IC = 10mA;V
CE= 5.0 V
0.58
−
0.66
−
VBE(on)
base-emitter saturation voltage
V
I
pF
=0.5V
Cib
C = 0; VCB
; f = 1 MH
9
emitter input capacitance
collector output capacitance
transition frequency
noise figure
z
z
−
−
−
−
−
6
−
IE = 0; V
pF
; f = 1 MH
3.5
300
Cob
CB =10V
f = 100 MHz
IE = 10 mA; VCE = 5 V;
MHz
dB
fT
NF
VCE=5V , IC=200uA , F=1KHz , RG=2K
10
2
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2. hFE Classification P:110 to 220 Q: 200 to 450, Y: 420 to 800
RATING CHARACTERISTIC CURVES ( CHT848BWPT)
fig1.Static Characteristic
fig2.DC current Gain
100
80
60
40
20
0
10000
1000
100
IB = 400µA
IB = 350µA
VCE = 5V
IB = 300µA
IB = 250µA
IB = 200µA
IB = 150µA
IB = 100µA
IB = 50µA
10
1
10
100
1000
0
4
8
12
16
20
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
RATING CHARACTERISTIC CURVES ( CHT848BWPT)
fig3.Base-Emitter Stauration Voltage
fig4.Base-Emitter On Voltage
Collector-Emitter Stauration Voltage
10000
1000
100
100
IC = 10 IB
VCE = 2V
VBE(sat)
10
1
VCE(sat)
10
0.1
0.0
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
fig6.Current Gain Bandwidth Product
fig5.Collector Output Capacitance
1000
100
10
100
10
1
f=1MHz
VCE=5V
0.1
1
1
10
100
1000
0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
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