CHT84N1PT [CHENMKO]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | CHT84N1PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总3页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT84N1PT
SURFACE MOUNT
P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 50 Volts CURRENT 0.13 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
FBPT-923
FEATURE
* Small surface mounting type. (FBPT-923)
* High density cell design for low RDS(ON).
* Suitable for high packing density.
* Rugged and reliable.
0.5±0.05
1.0±0.05
0.37(REF.)
0.25(REF.)
* High saturation current capability.
* Voltage controlled small signal switch.
1.0±0.05
CONSTRUCTION
0.05±0.04
* P-Channel Enhancement
0.68±0.05
0.42±0.05
0.3±0.05
D
3
CIRCUIT
0.26±0.05
1
G
Dimensions in millimeters
FBPT-923
2
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
CHT84N1PT
Symbol
Parameter
Units
VDSS
Drain-Source Voltage
-50
V
±20
V
A
VGSS
Gate-Source Voltage - Continuous
Maximum Drain Current - Continuous
ID
-0.13
PD
Maximum
mW
°C
Power Dissipation
100
-55 to 150
TJ,TSTG
Operating and Storage Temperature Range
Thermal characteristics
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
417
2006-07
RATING CHARACTERISTIC CURVES ( CHT84N1PT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA
Zero Gate Voltage Drain Current VDS = -50 V, VGS = 0 V
VDS = -25 V, VGS = 0 V
-50
V
-15
-100
10
µA
nA
nA
nA
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
-10
ON CHARACTERISTICS (Note 1)
VGS(th)
RDS(ON)
gFS
Gate Threshold Voltage
VDS = VGS, ID = 1.0 µA
-0.8
-2.0
V
10
Static Drain-Source On-Resistance VGS = -5.0 V, ID = 0.1 A
Ω
Forward Transconductance
VDS = -25 V, ID = 1000 mA
0.05
S
DYNAMIC CHARACTERISTICS
pF
nS
Ciss
Coss
Crss
ton
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
45
25
12
VDD = -30 V
ID = -270 mA, VGS = -10 V,
10
toff
Turn-Off Time
18
RGEN = 50
Ω
RATING CHARACTERISTIC CURVES ( CHT84N1PT )
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation
with Temperature
600
15
12
500
400
VGS = 5V
4.5V
V GS =-10V
9.0
6.0
ID
= -130mA
300
200
100
0
3.5V
3.0V
3.0
0
2.5V
0
1
2
3
4
5
-50
-25
0
T
25
50
75
100
125
150
,
JUNCTION TEMPERATURE (°C)
J
VDS , DRAIN-SOURCE VOLTAGE (V)
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