CHDTC123EEPT [CHENMKO]
NPN Digital Silicon Transistor; NPN数字硅晶体管![CHDTC123EEPT](http://pdffile.icpdf.com/pdf1/p00147/img/icpdf/CHDTC_814180_icpdf.jpg)
型号: | CHDTC123EEPT |
厂家: | ![]() |
描述: | NPN Digital Silicon Transistor |
文件: | 总3页 (文件大小:111K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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CHENMKO ENTERPRISE CO.,LTD
CHDTC123EEPT
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 50 Volts CURRENT 100 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
* Small surface mounting type. (SC-75/SOT-416)
* High current gain.
SC-75/SOT-416
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* Internal isolated NPN transistors in one package.
* Built in bias resistor(R1=2.2kΩ, Typ. )
0.1
0.2±
0.05
0.5
0.5
1.6±0.2
1.0±0.1
0.3±
0.1
0.05
0.1
0.2±
0.05
CONSTRUCTION
0.8±0.1
* One NPN transistors and bias of thin-film resistors in one
package.
MARKING
EEA
0.6~0.9
0~0.1
0.15±0.05
0.1Min.
Gnd
2
In
1
1.6±0.2
CIRCUIT
R2
R1
TR
3
SC-75/SOT-416
Dimensions in millimeters
Out
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
Supply voltage
MIN.
MAX.
50
UNIT
VCC
−
V
V
VIN
Input voltage
-10
−
+12
100
100
150
+150
150
150
IO
DC Output current
mA
−
IC(Max.)
PTOT
TSTG
TJ
Tamb ≤ 25 OC, Note 1
−
Total power dissipation
Storage temperature
Junction temperature
Thermal resistance
mW
OC
−55
−
OC
junction - soldering point
OC/W
RθJ-S
−
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003-12
RATING CHARACTERISTIC ( CHDTC123EEPT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
SYMBOL PARAMETER
Input off voltage
T
CONDITIONS
MIN.
0.5
TYP.
MAX.
UNIT
−
−
−
VIoff)
IO=100uA; VCC=5.0V
IO=20mA; VO=0.3V
IO=10mA; II=0.5mA
V
V
V
3.0
VI(on)
Input on voltage
−
0.3
VO(on)
II
Output voltage
Input current
−
0.1
−
−
VI=5V
3.8
0.5
−
mA
uA
IO(off)
hFE
Output current
DC current gain
Input resistor
VI=0V; VCC=50V
IO=20mA; VO=5.0V
−
−
20
1.54
0.8
−
−
R1
2.2
1.0
250
2.86
1.2
−
KΩ
R2/R1
f T
Resistor ratio
Transition frequency
IC=5mA, VCE=10.0V
MHz
f==100MHz
Note
1.Pulse test: tp≤300uS; δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHDTC123EEPT )
Typical Electrical Characteristics
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
100
50
10m
VO=0.3V
V
CC=5V
5m
2m
Ta=100°C
25°C
−40°C
20
10
1m
500µ
Ta=−40°C
25°C
100°C
5
2
200µ
100µ
50µ
1
20µ
500m
10µ
5µ
200m
100m
2µ
1µ
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
0
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT : I (A)
O
INPUT VOLTAGE : VI(off) (V)
Fig.3 DC current gain vs. output
current
Fig.4 Output voltage vs. output
current
1k
1
V
O
=5V
lO
/lI
=20
500
500m
200m
100m
50m
200
100
Ta=100°C
25°C
−40°C
50
Ta=100°C
25°C
−40°C
20
10
5
20m
10m
5m
2m
1m
2
1
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : I (A)
O
OUTPUT CURRENT : I (A)
O
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