CHDTC123YUPT [CHENMKO]
NPN Digital Silicon Transistor; NPN数字硅晶体管![CHDTC123YUPT](http://pdffile.icpdf.com/pdf1/p00123/img/icpdf/CHDTC_682081_icpdf.jpg)
型号: | CHDTC123YUPT |
厂家: | ![]() |
描述: | NPN Digital Silicon Transistor |
文件: | 总3页 (文件大小:88K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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CHENMKO ENTERPRISE CO.,LTD
CHDTC123YUPT
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 50 Volts CURRENT 100 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
* Small surface mounting type. (SC-70/SOT-323)
* High current gain.
SC-70/SOT-323
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* Internal isolated NPN transistors in one package.
* Built in bias resistor(R1=2.2kΩ, Typ. )
0.65
1.3±0.1
2.0±0.2
0.65
0.3±0.1
CONSTRUCTION
1.25±0.1
* One NPN transistors and bias of thin-film resistors in one
package.
MARKING
0.8~1.1
YUA
0.05~0.2
0~0.1
0.1Min.
Gnd
2
In
1
2.0~2.45
CIRCUIT
R2
R1
TR
3
SC-70/SOT-323
Dimensions in millimeters
Out
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
Supply voltage
CONDITIONS
MIN.
MAX.
50
UNIT
VCC
−
V
V
VIN
Input voltage
-5
−
+12
100
100
200
+150
150
140
IO
DC Output current
mA
−
IC(Max.)
PTOT
TSTG
TJ
Tamb ≤ 25 OC, Note 1
−
Total power dissipation
Storage temperature
Junction temperature
Thermal resistance
mW
OC
−55
−
OC
junction - soldering point
OC/W
RθJ-S
−
Note
1. Transistor mounted on an FR4 printed-circuit board.
2005-06
RATING CHARACTERISTIC ( CHDTC123YUPT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
SYMBOL PARAMETER
Input off voltage
T
CONDITIONS
MIN.
0.3
TYP.
MAX.
UNIT
−
−
−
VIoff)
IO=100uA; VCC=5.0V
IO=20mA; VO=0.3V
IO=10mA; II=0.5mA
V
V
V
VI(on)
Input on voltage
−
3.0
0.3
VO(on)
II
Output voltage
Input current
−
0.1
−
−
VI=5V
3.8
0.5
−
mA
uA
IO(off)
hFE
Output current
DC current gain
Input resistor
VI=0V; VCC=50V
IO=10mA; VO=5.0V
−
−
33
1.54
3.6
−
−
R1
2.2
4.5
250
2.86
5.5
−
KΩ
R2/R1
f T
Resistor ratio
Transition frequency
IE=-5mA, VCE=10.0V
MHz
f==100MHz
Note
1.Pulse test: tp≤300uS; δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHDTC123YUPT )
Typical Electrical Characteristics
Fig.1 Input voltage vs. output current
Fig.2 Output current vs. input voltage
(ON characteristics)
(OFF characteristics)
10m
100
VO= 0.3V
=
VCC 5V
5m
50
20
10
2m
1m
O
=
Ta 100 C
25OC
-40OC
5
O
=
Ta 100 C
100u
10u
25OC
2
1
-40OC
500m
200m
100m
1u0
1.0
2.0
3.0
50m
100m
10m
1m
100u
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : VI(off) (V)
Fig.3 DC current gain vs. output
Fig.4 Output voltage vs. output
current
current
1k
1
=
5V
VO
=
lO/lI 20
500m
500
Ta=100OC
25OC
200
100
200m
100m
50m
Ta=100OC
25OC
-40OC
-40OC
50
20
10
20m
10m
5m
5
2
1
2m
1m
1m
10m
100m
100u
1m
10m
100m
100u
OUTPUT CURRENT : I
O
(A)
OUTPUT CURRENT : I (A)
O
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