CHDTC124GKPTGP [CHENMKO]
Transistor,;
| 型号： | CHDTC124GKPTGP |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHDTC124GKPT
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 50 Volts CURRENT 100 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
* Small surface mounting type. (SOT-23)
* High current gain.
SOT-23
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* Internal isolated NPN transistors in one package.
* Built in bias resistor(R1=22kΩ, Typ. )
(1)
(2)
(3)
CONSTRUCTION
* One NPN transistors and bias of thin-film resistors in one
package.
(
)
(
)
.055 1.40
.028 0.70
(
)
(
)
.047 1.20
.020 0.50
(
)
.103 2.64
.086 (2.20)
Emitter
Base
(
)
.045 1.15
2
1
CIRCUIT
(
)
.033 0.85
R1
TR
3
Collector
SOT-23
Dimensions in inches and (millimeters)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System .
VALUE
SYMBOL
PARAMETER
CONDITIONS
UNIT
VCBO
Collector-Base voltage
50
50
5
V
V
V
VCEO
VEBO
Collector-Emitter voltage
Emitter-Base voltage
IC(Max.)
PD
Collector current
100
200
mA
mW
OC
Tamb ≤ 25 OC, Note 1
Power dissipation
Storage temperature
Junction temperature
-55 ~ +150
-55 ~ +150
TSTG
TJ
OC
OC/W
RθJ-S
, Note 1
Thermal resistance
junction - soldering point 140
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003-12
RATING CHARACTERISTIC ( CHDTC124GKPT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
T
SYMBOL
PARAMETER
CONDITIONS
IC=50uA
MIN.
50.0
TYP.
MAX.
UNIT
−
−
−
−
−
−
−
−
BVCBO
BVCEO
BVEBO
Collector-Base breakdown voltage
V
V
V
V
Collector-Emitter breakdown voltage IC=1mA
50.0
5.0
−
IE=330uA
Emitter-Base breakdown voltage
IC=10mA; IB=0.5mA
VCE(sat)
ICBO
Collector-Emitter Saturation voltage
Collector-Base current
Emitter-Base current
DC current gain
0.3
0.5
260
−
−
uA
uA
VCB=50V
IEBO
VEB=4V
140
56
−
−
hFE
IC=5mA; VCE=5.0V
R1
Input resistor
15.4
22
28.6
KΩ
f T
Transition frequency
IE=-5mA, VCE=10.0V
−
250
−
MHz
f==100MHz
Note
1.Pulse test: tp≤300uS; δ ≤0.02.
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