CHDTC123EKPT [CHENMKO]

NPN Digital Silicon Transistor; NPN数字硅晶体管
CHDTC123EKPT
型号: CHDTC123EKPT
厂家: CHENMKO ENTERPRISE CO. LTD.    CHENMKO ENTERPRISE CO. LTD.
描述:

NPN Digital Silicon Transistor
NPN数字硅晶体管

晶体 晶体管
文件: 总3页 (文件大小:101K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CHENMKO ENTERPRISE CO.,LTD  
CHDTC123EKPT  
SURFACE MOUNT  
NPN Digital Silicon Transistor  
VOLTAGE 50 Volts CURRENT 100 mAmpere  
APPLICATION  
* Switching circuit, Inverter, Interface circuit, Driver circuit.  
FEATURE  
* Small surface mounting type. (SC-59/SOT-346)  
* High current gain.  
SC-59/SOT-346  
* Suitable for high packing density.  
* Low colloector-emitter saturation.  
* High saturation current capability.  
* Internal isolated NPN transistors in one package.  
* Built in bias resistor(R1=2.2kΩ, Typ. )  
(2)  
(3)  
0.95  
2.7~3.1  
0.95  
(1)  
1.7~2.1  
CONSTRUCTION  
0.3~0.51  
* One NPN transistors and bias of thin-film resistors in one  
package.  
1.2~1.9  
MARKING  
0.89~1.3  
EKA  
0.085~0.2  
0~0.1  
0.3~0.6  
Gnd  
2
In  
1
CIRCUIT  
2.1~2.95  
R2  
R1  
TR  
3
Dimensions in millimeters  
SC-59/SOT-346  
Out  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
Supply voltage  
CONDITIONS  
MIN.  
MAX.  
50  
UNIT  
VCC  
V
V
VIN  
Input voltage  
-10  
+12  
100  
100  
200  
+150  
150  
150  
IO  
DC Output current  
mA  
IC(Max.)  
PTOT  
TSTG  
TJ  
Tamb 25 OC, Note 1  
Total power dissipation  
Storage temperature  
Junction temperature  
Thermal resistance  
mW  
OC  
55  
OC  
junction - soldering point  
OC/W  
RθJ-S  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
2003-12  
RATING CHARACTERISTIC ( CHDTC123EKPT )  
CHARACTERISTICS  
amb = 25 °C unless otherwise speciÞed.  
SYMBOL PARAMETER  
Input off voltage  
T
CONDITIONS  
MIN.  
0.5  
TYP.  
MAX.  
UNIT  
VIoff)  
IO=100uA; VCC=5.0V  
IO=20mA; VO=0.3V  
IO=10mA; II=0.5mA  
V
V
V
3.0  
VI(on)  
Input on voltage  
0.3  
VO(on)  
II  
Output voltage  
Input current  
0.1  
VI=5V  
3.8  
0.5  
mA  
uA  
IO(off)  
hFE  
Output current  
DC current gain  
Input resistor  
VI=0V; VCC=50V  
IO=20mA; VO=5.0V  
20  
1.54  
0.8  
R1  
2.2  
1.0  
250  
2.86  
1.2  
KΩ  
R2/R1  
f T  
Resistor ratio  
Transition frequency  
IC=5mA, VCE=10.0V  
MHz  
f==100MHz  
Note  
1.Pulse test: tp300uS; δ≤0.02.  
RATING CHARACTERISTIC CURVES ( CHDTC123EKPT )  
Typical Electrical Characteristics  
Fig.1 Input voltage vs. output current  
(ON characteristics)  
Fig.2 Output current vs. input voltage  
(OFF characteristics)  
100  
50  
10m  
VO=0.3V  
V
CC=5V  
5m  
2m  
Ta=100°C  
25°C  
40°C  
20  
10  
1m  
500µ  
Ta=−40°C  
25°C  
100°C  
5
2
200µ  
100µ  
50µ  
1
20µ  
500m  
10µ  
5µ  
200m  
100m  
2µ  
1µ  
100µ 200µ  
500µ 1m  
2m  
5m 10m 20m 50m 100m  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
OUTPUT CURRENT : I (A)  
O
INPUT VOLTAGE : VI(off) (V)  
Fig.3 DC current gain vs. output  
current  
Fig.4 Output voltage vs. output  
current  
1k  
1
V
O
=5V  
lO  
/lI  
=20  
500  
500m  
200m  
100m  
50m  
200  
100  
Ta=100°C  
25°C  
40°C  
50  
Ta=100°C  
25°C  
40°C  
20  
10  
5
20m  
10m  
5m  
2m  
1m  
2
1
100µ 200µ  
500µ 1m  
2m  
5m 10m 20m  
50m 100m  
100µ 200µ  
500µ 1m  
2m  
5m 10m 20m  
50m 100m  
OUTPUT CURRENT : I (A)  
O
OUTPUT CURRENT : I (A)  
O

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