CHDTC123TMPT [CHENMKO]
NPN Digital Silicon Transistor; NPN数字硅晶体管
| 型号： | CHDTC123TMPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | NPN Digital Silicon Transistor |
| 文件： | 总3页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHDTC123TMPT
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 50 Volts CURRENT 100 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
SOT-723
* Small surface mounting type. (SOT-723)
* High current gain.
* Suitable for high packing density.
* Low colloector-emitter saturation.
0.17~0.27
* High saturation current capability.
(2)
(3)
* Internal isolated NPN transistors in one package.
* Built in single resistor(R1=2.2kΩ, Typ. )
0.4
0.4
1.15~1.25
0.75~0.85
(10) .17~0.27
0.27~0.37
0.75~0.85
CONSTRUCTION
* One NPN transistors and bias of thin-film resistors in one
package.
0.45~0.55
0.11~0.14
Emitter
2
Base
1
1.15~1.25
CIRCUIT
TR
R1
3
Collector
SOT-723
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
VALUE
SYMBOL
PARAMETER
CONDITIONS
UNIT
VCBO
Collector-Base voltage
50
50
5
V
V
V
VCEO
VEBO
Collector-Emitter voltage
Emitter-Base voltage
IC(Max.)
PD
Collector current
100
150
mA
mW
OC
Tamb ≤ 25 OC, Note 1
Power dissipation
Storage temperature
Junction temperature
-55 ~ +150
-55 ~ +150
TSTG
TJ
OC
OC/W
RθJ-S
, Note 1
Thermal resistance
junction - soldering point 140
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-06
RATING CHARACTERISTIC ( CHDTC123TMPT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
T
SYMBOL
PARAMETER
CONDITIONS
IC=50uA
MIN.
50
TYP.
MAX.
UNIT
−
−
BVCBO
BVCEO
Collector-base breakdown voltage
−
−
−
V
V
V
50
Collector-emitter breakdown voltage IC=1.0mA
IE=50uA
BVEBO
ICBO
Emitter-base breakdown voltage
5.0
−
−
−
−
−
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
VCB=50V
0.5
0.5
0.3
600
2.86
−
uA
uA
V
IEBO
VEB=4V
−
VCE(sat)
IC/IB=5mA/0.25mA
IC=1mA; VCE=5.0V
−
hFE
R1
f T
100
1.54
−
250
2.2
KΩ
Input resistor
Transition frequency
IC=5mA, VCE=10.0V
250
MHz
f=100MHz
Note
1.Pulse test: tp≤300uS; δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHDTC123TMPT )
Typical Electrical Characteristics
Fig.1 DC current gain vs. collector
Fig.2 Collector-emitter voltage vs.
current
collector current
1k
1
V
CE =5V
lO/lI=20
500m
500
200
Ta=100OC
25OC
200m
-40OC
100m
50m
100
50
Ta=100OC
25OC
-40OC
20
20m
10m
5m
10
5
2
1
2m
1m
100 200 500 1m 2m 5m 10m 20m 50m100m
100
200
500 1m
2m
5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (uA)
相关型号：
©2020 ICPDF网 联系我们和版权申明