MCR716LEADFREE [CENTRAL]

Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, PLASITC, DPAK-3;

MCR716LEADFREE


型号：	MCR716LEADFREE
厂家：	CENTRAL SEMICONDUCTOR CORP
描述：	Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, PLASITC, DPAK-3 栅栅极
文件：	总2页 (文件大小：490K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MCR716

MCR718

www.centralsemi.com

SURFACE MOUNT

SILICON CONTROLLED RECTIFIERS

4.0 AMP, 400 THRU 600 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MCR716 and

MCR718 are epoxy molded SCRs designed for sensing

circuit and control system applications.

MARKING: FULL PART NUMBER

DPAK CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

C

SYMBOL

MCR716

MCR718

UNITS

Peak Repetitive Off-State Voltage

V

V

400

600

V

DRM, RRM

RMS On-State Current (T =85°C)

C

I

4.0

A

T(RMS)

Peak non-Repetitive Surge Current

(1/2 cycle Sine wave, 50Hz/60Hz)

I

15

A

A²s

W

TSM

I²t

2

I t Value for Fusing, t=10ms

1.1

Peak Gate Power, tp=1.0μs

Average Gate Power Dissipation

Peak Gate Current, tp=1.0μs

Critical Rate of Rise of On-State Current

Storage Temperature

P

0.5

0.1

0.2

50

GM

P

W

G(AV)

I

A

GM

di/dt

A/μs

°C

°C

T

-40 to +150

-40 to +125

stg

Junction Temperature

T

J

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

C

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

I

I

I

I

I

Rated V

V R =1.0KΩ

10

μA

DRM, RRM

DRM, RRM, GK

I

Rated V

V

R

=1.0KΩ, T =125°C

200

75

μA

μA

mA

V

DRM, RRM

DRM, RRM, GK

C

V =12V, R =10Ω

1.0

38

GT

H

D

L

I =50mA, R =1.0KΩ

0.25

0.55

1.6

2.0

0.8

1.8

T

GK

V

V =12V, R =10Ω

GT

TM

D

L

V

I

=8.0A, tp=380μs

2

V

TM

dv/dt

V = / V

R

=1.0KΩ, T =125°C

10

V/μs

3

D

DRM, GK

C

R2 (21-January 2013)

MCR716

MCR718

SURFACE MOUNT

SILICON CONTROLLED RECTIFIERS

4.0 AMP, 400 THRU 600 VOLT

DPAK CASE - MECHANICAL OUTLINE

LEAD CODE:

1) Cathode

2) Anode

3) Gate

4) Anode

MARKING:

FULL PART NUMBER

R2 (21-January 2013)

www.centralsemi.com

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