MCR718RL [ONSEMI]
MCR718RL;型号: | MCR718RL |
厂家: | ONSEMI |
描述: | MCR718RL 栅极 触发装置 可控硅整流器 |
文件: | 总5页 (文件大小:61K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MCR716, MCR718
Preferred Device
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control, process control, temperature, light
and speed control.
http://onsemi.com
SCRs
4.0 AMPERES RMS
400 − 600 VOLTS
Features
• Small Size
• Passivated Die for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Surface Mount Lead Form − Case 369C
G
A
K
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
4
• Pb−Free Packages are Available
2
1
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
DPAK
CASE 369C
STYLE 4
Peak Repetitive Off−State Voltage
V
V
V
DRM,
(Note 1) (T = −40 to 110°C, Sine Wave,
J
RRM
50 to 60 Hz, Gate Open)
MCR716
MCR718
400
600
MARKING DIAGRAM
On−State RMS Current
(180° Conduction Angles; T = 90°C)
I
4.0
2.6
25
A
A
A
T(RMS)
C
Average On−State Current
(180° Conduction Angles; T = 90°C)
I
T(AV)
YWW
MCR
71xG
C
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T = 110°C)
I
TSM
J
2
2
Circuit Fusing Consideration (t = 8.3 msec)
I t
2.6
0.5
A sec
Y
= Year
Forward Peak Gate Power
P
W
W
A
GM
WW
= Work Week
(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)
C
MCR71x = Device Code
x= M or N
Forward Average Gate Power
P
0.1
0.2
G(AV)
(t = 8.3 msec, T = 90°C)
C
G
= Pb−Free Package
Forward Peak Gate Current
I
GM
(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)
C
PIN ASSIGNMENT
Cathode
Operating Junction Temperature Range
Storage Temperature Range
T
−40 to +110
−40 to +150
°C
°C
J
1
2
3
4
T
stg
Anode
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Gate
Anode
1. V
and V
for all types can be applied on a continuous basis. Ratings
DRM
RRM
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
November, 2005 − Rev. 5
MCR716/D
MCR716, MCR718
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
3.0
80
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Case
R
ꢁ
JC
JA
L
Thermal Resistance, Junction−to−Ambient (Note 2)
R
ꢁ
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
260
°C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current; R = 1 kꢂ (Note 3)
I
I
ꢀ A
GK
DRM
RRM
(V = Rated V
or V
)
T
T
= 25°C
−
−
−
−
10
200
AK
DRM
RRM
C
C
= 110°C
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage (I = 10 ꢀ A)
V
10
−
12.5
−
18
V
ꢀ A
V
GR
RGM
Peak Reverse Gate Blocking Current (V
= 10 V)
I
1.2
GR
RGM
Peak Forward On−State Voltage (Note 4)
(I = 5.0 A Peak)
V
TM
−
−
1.3
1.5
1.5
2.2
TM
(I = 8.2 A Peak)
TM
Gate Trigger Current (Continuous dc) (Note 5)
(V = 12 Vdc, R = 30 Ohms)
I
ꢀ
A
GT
T
T
= 25°C
= −40°C
1.0
−
25
−
75
300
D
L
C
C
Gate Trigger Voltage (Continuous dc) (Note 5)
(V = 12 Vdc, R = 30 Ohms)
V
V
GT
T
T
T
= 25°C
= −40°C
= 110°C
0.3
−
0.2
0.55
−
−
0.8
1.0
−
D
L
C
C
C
Holding Current (Note 3)
(V = 12 Vdc, Initiating Current = 200 mA, Gate Open)
D
I
mA
mA
ꢀ s
H
T
T
= 25°C
= −40°C
0.4
−
1.0
−
5.0
10
C
C
Latching Current (Note 3)
I
L
(V = 12 Vdc, I = 2.0 mA, T = 25°C)
−
−
−
−
5.0
10
D
G
C
(V = 12 Vdc, I = 2.0 mA, T = −40°C)
D
G
C
Total Turn-On Time
(Source Voltage = 12 V, R = 6 kꢂ, I = 8 A(pk), R = 1 kꢂ)
t
−
2.0
5.0
gt
S
T
GK
(V = Rated V
, Rise Time = 20 ns, Pulse Width = 10 ꢀ s)
DRM
D
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
dv/dt
di/dt
5.0
−
10
−
−
V/ꢀ s
A/ꢀ s
(V = 0.67 x Rated V
D
, R = 1 kꢂ, Exponential Waveform, T = 110°C)
DRM GK J
Repetitive Critical Rate of Rise of On−State Current
(f = 60 Hz, I = 30 A, PW = 100 ꢀ s, dIG/dt = 1 A/ꢀ s)
100
PK
2. Case 369C, when surface mounted on minimum recommended pad size.
3. Ratings apply for negative gate voltage or R = 1 kꢂ. Devices shall not have a positive gate voltage concurrently with a negative voltage
GK
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
4. Pulse Test: Pulse Width ≤ 2 ms, Duty Cycle ≤ 2%.
5. R current not included in measurements.
GK
ORDERING INFORMATION
Device
†
Package
Shipping
MCR716T4
DPAK
MCR716T4G
DPAK
(Pb−Free)
2500 / Tape and Reel
MCR718T4
DPAK
DPAK
MCR718T4G
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MCR716, MCR718
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
Symbol
Parameter
V
Peak Repetitive Off−State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off−State Reverse Voltage
Peak Reverse Blocking Current
Peak On−State Voltage
DRM
DRM
on state
I
I
H
I
at V
RRM
RRM
V
RRM
I
RRM
V
I
+ Voltage
TM
Holding Current
I
at V
DRM
H
Reverse Blocking Region
(off state)
DRM
Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode −
110
105
5.0
4.0
3.0
2.0
30°C
60°C
30°C
60°C
90°C
120°C
180°C
90°C
120°C
180°C
DC
DC
100
95
1.0
0
0
1.0
2.0
3.0
4.0
5.0
0
1.0
I , AVERAGE ON−STATE CURRENT (AMPS)
T(AV)
2.0
3.0
4.0
5.0
I
, AVERAGE ON−STATE CURRENT (AMPS)
T(AV)
Figure 1. Average Current Derating
Figure 2. On−State Power Dissipation
100
10
1.0
Typical @ T = 25°C
J
Maximum @ T = 110°C
J
Z
= R
•r(t)
ꢁ
JC(t)
ꢁ
JC(t)
0.1
Maximum @ T = 25°C
J
1.0
0.1
0.01
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.1
1.0
10
100
1000
10,000
V , INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
T
t, TIME (ms)
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
http://onsemi.com
3
MCR716, MCR718
35
30
25
1.0
0.5
20
15
0
−40
−20
0
20
40
60
80
100 110
−40
−20
0
20
40
60
80
100 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
2.0
1.5
1.0
2.0
1.5
1.0
0.5
0
0.5
0
−40
−20
0
20
40
60
80
100 110
−40
−20
0
20
40
60
80
100 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
http://onsemi.com
4
MCR716, MCR718
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
NOTES:
SEATING
PLANE
−T−
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING DIMENSION: INCH.
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
G
0.13 (0.005)
T
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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For additional information, please contact your
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MCR716/D
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