MCR72 [DIGITRON]
SILICON CONTROLLED RECTIFIERS;型号: | MCR72 |
厂家: | Digitron Semiconductors |
描述: | SILICON CONTROLLED RECTIFIERS |
文件: | 总3页 (文件大小:223K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
D I G I T R O N S E M I C O N D U C T O R S
MCR72 SERIES
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open)
MCR72-1
MCR72-2
MCR72-3
MCR72-4
MCR72-5
MCR72-6
MCR72-7
MCR72-8
25
50
VDRM
VRRM
100
200
300
400
500
600
V
On-state RMS current (180° conduction angles, TC = 83°C)
IT(RMS)
ITSM
8.0
A
A
Peak non-repetitive surge current
(half-cycle, sine wave, 60Hz, TJ = 110°C)
100
40
Circuit fusing consideration (t = 8.3ms)
Forward peak gate voltage (t ≤ 10µs, TC = 83°C)
Forward peak gate current (t ≤ 10µs, TC = 83°C)
Forward peak gate power (pulse width ≤ 10µs, TC = 83°C)
Average gate power (t = 8.3ms, TC = 83°C)
Operating junction temperature range
Storage temperature range
I2t
VGM
IGM
PGM
PG(AV)
TJ
A2s
V
±5.0
1.0
A
5.0
W
0.75
W
-40 to +110
-40 to +150
8.0
°C
Tstg
°C
Mounting torque
-
In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
RӨJC
Maximum
Unit
°C/W
°C/W
Thermal resistance, junction to case
Thermal resistance, junction to ambient
2.2
60
RӨJA
Lead solder temperature
TL
°C
(lead length 1/8” from case, 10s max)
260
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak forward or reverse blocking current(2)
(VAK = Rated VDRM or VRRM, RGK = 1kΩ)
TC = 25°C
IDRM,
IRRM
µA
-
-
-
-
10
TC = 110°C
500
ON CHARACTERISTICS
Peak forward on-state voltage
VTM
V
µA
V
(ITM = 16A, pulse width ≤ 1ms, duty cycle ≤ 2%)
-
-
-
1.7
30
2.0
200
1.5
Gate trigger current (continuous dc)(3)
(VD = 12V, RL = 100Ω)
Gate trigger voltage (continuous dc)(3)
(VD = 12V, RL = 100Ω)
IGT
VGT
0.5
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
144 Market Street
Kenilworth NJ 07033 USA
Rev. 20130115
D I G I T R O N S E M I C O N D U C T O R S
MCR72 SERIES
SILICON CONTROLLED RECTIFIERS
Gate non-trigger voltage
VGD
V
(VD = 12V, RL = 100Ω, TJ = 110°C)
0.1
-
-
-
6.0
-
Holding current
IH
mA
µs
(VD = 12V, gate open, initiating current = 200mA)
-
-
Gate controlled turn-on time
tgt
(VD = Rated VDRM, ITM = 16A, IG = 2mA)
1.0
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
dv/dt
V/µs
(VD = rated VDRM, RGK = 1kΩ, TJ = 110°C, exponential waveform)
-
10
-
Note 2. Ratings apply for negative gate voltage or RGK = 1kΩ. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should
not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.
Note 3: RGK current not included in measurement.
MECHANICAL CHARACTERISTICS
Case
TO-220AB
Marking
Pin out
Alpha-numeric
See below
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
144 Market Street
Kenilworth NJ 07033 USA
Rev. 20130115
D I G I T R O N S E M I C O N D U C T O R S
MCR72 SERIES
SILICON CONTROLLED RECTIFIERS
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
144 Market Street
Kenilworth NJ 07033 USA
Rev. 20130115
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