MCR718 [ONSEMI]
Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS); 敏感栅硅控整流器（SCR 4.0安培RMS 400 - 600伏）
| 型号： | MCR718 |
| 厂家： | 
ONSEMI |
| 描述： | Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS) |
| 文件： | 总6页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCR716, MCR718
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control, process control, temperature, light
and speed control.
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SCRs
4.0 AMPERES RMS
400 − 600 VOLTS
Features
• Small Size
• Passivated Die for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Surface Mount Lead Form − Case 369C
• Epoxy Meets UL 94, V−0 @ 0.125 in
G
A
K
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
4
YWW
MC
R71x
Peak Repetitive Off−State Voltage
V
V
RRM
V
DRM,
DPAK
CASE 369C
STYLE 4
(Note 1) (T = −40 to 110°C, Sine
J
2
Wave, 50 to 60 Hz, Gate Open)
MCR716
1
3
400
600
MCR718
On−State RMS Current
(180° Conduction Angles; T = 90°C)
I
4.0
2.6
25
A
A
A
T(RMS)
Y
WW
x
= Year
= Work Week
= 6 or 8
C
Average On−State Current
(180° Conduction Angles; T = 90°C)
I
T(AV)
C
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
T = 110°C)
J
I
TSM
PIN ASSIGNMENT
Cathode
1
2
3
4
Anode
2
2
Circuit Fusing Consideration
(t = 8.3 msec)
I t
2.6
0.5
0.1
0.2
A sec
Gate
Anode
Forward Peak Gate Power
(Pulse Width ≤ 1.0 m sec, T = 90°C)
P
W
W
A
GM
C
Forward Average Gate Power
P
G(AV)
ORDERING INFORMATION
(t = 8.3 msec, T = 90°C)
C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Forward Peak Gate Current
I
GM
(Pulse Width ≤ 1.0
smec, T = 90°C)
C
Preferred devices are recommended choices for future use
and best overall value.
Operating Junction Temperature Range
Storage Temperature Range
T
−40 to +110
−40 to +150
°C
°C
J
T
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. V
and V
for all types can be applied on a continuous basis. Ratings
DRM
RRM
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
August, 2004 − Rev. 4
MCR716/D
MCR716, MCR718
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
3.0
80
Unit
°C/W
°C/W
°C
Thermal Resistance, Junction−to−Case
R
q
JC
q
JA
L
Thermal Resistance, Junction−to−Ambient (Note 2)
R
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
260
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current; R = 1 kW (Note 3)
I
I
m A
GK
DRM
RRM
(V = Rated V
or V
)
T
C
T
C
= 25°C
−
−
−
−
10
200
AK
DRM
RRM
= 110°C
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage
V
10
−
12.5
−
18
V
m A
V
RGM
(I = 10 m A)
GR
Peak Reverse Gate Blocking Current
(V = 10 V)
GR
I
1.2
RGM
Peak Forward On−State Voltage (Note 4)
V
TM
(I = 5.0 A Peak)
(I = 8.2 A Peak)
TM
−
−
1.3
1.5
1.5
2.2
TM
Gate Trigger Current (Continuous dc) (Note 5)
I
m
A
GT
(V = 12 Vdc, R = 30 Ohms)
T
C
T
C
= 25°C
= −40°C
1.0
−
25
−
75
300
D
L
Gate Trigger Voltage (Continuous dc) (Note 5)
(V = 12 Vdc, R = 30 Ohms)
V
GT
V
T
C
T
C
T
C
= 25°C
= −40°C
= 110°C
0.3
−
0.2
0.55
−
−
0.8
1.0
−
D
L
Holding Current (Note 3)
(V = 12 Vdc, Initiating Current = 200 mA, Gate Open)
D
I
mA
mA
m s
H
T
C
T
C
= 25°C
= −40°C
0.4
−
1.0
−
5.0
10
Latching Current (Note 3)
I
L
(V = 12 Vdc, I = 2.0 mA, T = 25°C)
−
−
−
−
5.0
10
D
G
C
(V = 12 Vdc, I = 2.0 mA, T = −40°C)
D
G
C
Total Turn-On Time
(Source Voltage = 12 V, R = 6 kW, I = 8 A(pk), R = 1 kW)
t
−
2.0
5.0
gt
S
T
GK
(V = Rated V
, Rise Time = 20 ns, Pulse Width = 10 m s)
D
DRM
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
dv/dt
di/dt
5.0
−
10
−
−
V/m s
A/m s
(V = 0.67 x Rated V
D
, R = 1 kW, Exponential Waveform,
GK
DRM
T = 110°C)
J
Repetitive Critical Rate of Rise of On−State Current
100
(f = 60 Hz, I = 30 A, PW = 100 m s, dIG/dt = 1 A/m s)
PK
2. Case 369C, when surface mounted on minimum recommended pad size.
3. Ratings apply for negative gate voltage or R = 1 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
GK
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
4. Pulse Test: Pulse Width ≤ 2 ms, Duty Cycle ≤ 2%.
5. R current not included in measurements.
GK
ORDERING INFORMATION
Device
†
Package
DPAK
Shipping
MCR716T4
16 mm Tape & Reel (2.5 k / Reel)
16 mm Tape & Reel (2.5 k / Reel)
MCR718T4
DPAK
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MCR716, MCR718
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
Symbol
Parameter
V
Peak Repetitive Off−State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off−State Reverse Voltage
Peak Reverse Blocking Current
Peak On−State Voltage
DRM
DRM
on state
I
I
H
I
at V
RRM
RRM
V
RRM
RRM
I
V
TM
+ Voltage
I
H
Holding Current
I
at V
DRM
Reverse Blocking Region
(off state)
DRM
Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode −
110
105
5.0
4.0
3.0
2.0
30°C
60°C
30°C
60°C
90°C
90°C
120°C
120°C
180°C
180°C
DC
DC
100
95
1.0
0
0
1.0
2.0
3.0
4.0
5.0
0
1.0
2.0
3.0
4.0
5.0
I
, AVERAGE ON−STATE CURRENT (AMPS)
I
T(AV)
, AVERAGE ON−STATE CURRENT (AMPS)
T(AV)
Figure 1. Average Current Derating
Figure 2. On−State Power Dissipation
100
10
1.0
Typical @ T = 25°C
J
Maximum @ T = 110°C
J
Z
= R
•r(t)
JC(t)
q
q
JC(t)
0.1
Maximum @ T = 25°C
J
1.0
0.1
0.01
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.1
1.0
10
100
1000
10,000
V , INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
T
t, TIME (ms)
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
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3
MCR716, MCR718
35
30
25
1.0
0.5
20
15
0
−40
−20
0
20
40
60
80
100 110
−40
−20
0
20
40
60
80
100 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
2.0
1.5
1.0
2.0
1.5
1.0
0.5
0
0.5
0
−40
−20
0
20
40
60
80
100 110
−40
−20
0
20
40
60
80
100 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
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4
MCR716, MCR718
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
NOTES:
SEATING
PLANE
−T−
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING DIMENSION: INCH.
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
G
0.13 (0.005)
T
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
SOLDERING FOOTPRINT
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
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5
MCR716, MCR718
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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MCR716/D
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