MCR718 [TRSYS]
Silicon Controlled Rectifier; 可控硅整流器
| 型号： | MCR718 |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | Silicon Controlled Rectifier |
| 文件： | 总1页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCR716, MCR718 SERIES
Silicon Controlled Rectifier
VRRM = 400- 600V, IF(RMS) = 4.0A
G
K
A
Case D-PAK Plastic
Symbol
O
MAXIMUM RATINGS (Tj = 25 C unless stated otherwise)
Symbol
MCR716
400
MCR718
Unit
Parameter
VRRM
IT(RMS)
ITSM
Repetitive Peak Off-State Voltage
600
Volt
Amp
Amp
O
4.0 at tc = 90 C
On-State RMS Current
Peak Non-Repetitive Surge Current
25
2.6
2
2
2
A /S
I T for Fusing 8.3ms
I T
VGRM
IGM
18
Volt
Peak Reverse Gate Voltage
Peak Gate Current
0.2
0.1
Amp
Watt
Watt
PG(AV)
Forward Average Gate Power
Forward Peak Gate Power
0.5
PGM
T(STG)
Tj
-40 to +150
O
Maximum Storage Temperature Range
Maximum Junction Temperature Range
C
O
-40 to +110
C
ELECTRICAL CHARACTERISICS at
Tj = 25 C Maximum. Unless stated Otherwise
Value
Typ
Condition
Symbol
Unit
Max
Min
Parameter
ITM = 8.2 Amps
VTM
Peak Forward On-State Voltage
Repetitive Peak Reverse Current
Gate Trigger Voltage
2.2
200
0.80
75
1.5
Volt
µA
O
VR = VRRM. tJ=110 C
IRRM
VGT
IGT
IL
Volt
0.30
1.0
0.55
25
µA
Gate Trigger Current
Latch Current
mA
mA
5.0
5.0
3.0
Holding Current
IH
1.0
10
0.4
5.0
O
RTH
C/W
Thermal Resistance (Junction to Case)
(J-c)
dV/dt
dA/dt
V/µS
A/µS
Rate of Rise of Off-State Voltage
Rate of Rise of Off-State Current
100
Mechanical
Dimensions
f
DIMENSIONS
a
Millimetres
Inches
Min Max
0.250 0.265
g
h
Dim
a
b
c
d
Min
6.35
2.60
Max
6.73
c
d
e
2.89 0.102 0.114
4
0.77
5.97
0.51
2.19
0.84
3.51
0.51
0.46
1.27
6.35
1.27
2.38
1.01
0..030 0.050
0.235 0.25
0.020 0.050
0.086 0.094
0.033 0.040
0.138
1 - Cathode
2 & 4 - Anode
3 - Gate
e
b
1
2
3
f
g
j
h
j
k
m
n
p
0.020
m
0.580 0.018 0.023
n
2.29 Pitch
0.94 1.19
0.69
0.09 Pitch
k
0.037 0.047
p
0.88 0.027
0.035
Case D-PAK Plastic
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