CZT5401ETR [CENTRAL]
Power Bipolar Transistor, 0.6A I(C), 220V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, ROHS COMPLIANT PACKAGE-4;型号: | CZT5401ETR |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | Power Bipolar Transistor, 0.6A I(C), 220V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, ROHS COMPLIANT PACKAGE-4 开关 光电二极管 晶体管 |
文件: | 总2页 (文件大小:534K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CZT5401E
www.centralsemi.com
ENHANCED SPECIFICATION
SURFACE MOUNT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5401E is a
PNP Silicon Transistor, packaged in an SOT-223 case,
designed for general purpose amplifier applications
requiring high breakdown voltage.
MARKING: FULL PART NUMBER
FEATURES:
• High Collector Breakdown Voltage 250V
• Low Leakage Current 50nA MAX
• Low Saturation Voltage 150mV MAX @ 50mA
• Complementary Device: CZT5551E
• SOT-223 Surface Mount Package
SOT-223 CASE
APPLICATIONS:
• General purpose switching and amplification
• Telephone applications
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
♦ Collector-Base Voltage
V
250
220
CBO
♦
♦
Collector-Emitter Voltage
V
V
CEO
EBO
Emitter-Base Voltage
V
7.0
V
Continuous Collector Current
Power Dissipation
I
600
mA
W
C
P
2.0
D
Operating and Storage Junction Temperature
Thermal Resistance
T
T
-65 to +150
62.5
°C
J, stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
50
UNITS
nA
μA
nA
V
I
I
I
V
V
V
=120V
CBO
CBO
EBO
CB
CB
EB
=120V, T =100°C
A
=3.0V
50
50
♦ BV
I =100µA
250
220
7.0
CBO
C
♦
BV
I =1.0mA
V
CEO
C
♦
BV
I =10µA
V
EBO
E
♦
♦
V
V
V
V
I =10mA, I =1.0mA
100
150
mV
mV
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
C
B
I =50mA, I =5.0mA
C
B
I =10mA, I =1.0mA
1.00
1.00
C
B
I =50mA, I =5.0mA
V
C
B
♦ Enhanced specification
R1 (1-March 2010)
CZT5401E
ENHANCED SPECIFICATION
SURFACE MOUNT
PNP SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
100
100
75
MAX
300
UNITS
h
V
V
V
V
V
V
V
V
=5.0V, I =1.0mA
C
♦
FE
CE
CE
CE
CE
CE
CB
CE
CE
♦ h
♦ h
♦ h
=5.0V, I =10mA
FE
FE
FE
C
=5.0V, I =50mA
C
=10V, I =150mA
25
C
f
=10V, I =10mA, f=100MHz
100
300
6.0
MHz
pF
T
C
C
=10V, I =0, f=1.0MHz
ob
E
h
=10V, I =1.0mA, f=1.0kHz
40
200
fe
C
NF
=5.0V, I =200μA, R =10Ω,
C S
f=10Hz to 15.7kHz
8.0
dB
♦ Enhanced specification
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R1 (1-March 2010)
www.centralsemi.com
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