CP323-BST52-CG [CENTRAL]
Transistor;![CP323-BST52-CG](http://pdffile.icpdf.com/pdf2/p00224/img/icpdf/CP323-BSS52-_1308242_icpdf.jpg)
型号: | CP323-BST52-CG |
厂家: | ![]() |
描述: | Transistor |
文件: | 总2页 (文件大小:212K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TM
PROCESS CP323
Small Signal Transistor
NPN - Darlington Transistor Chip
Central
Semiconductor Corp.
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
Die Thickness
26.8 x 26.8 MILS
9.0 MILS
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
4.2 x 4.2 MILS
4.3 x 4.3 MILS
Al -
Au - 18,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
15,900
PRINCIPAL DEVICE TYPES
BSS52
BST52
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R1 (1-August 2002)
TM
PROCESS CP323
Central
Typical Electrical Characteristics
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R1 (1-August 2002)
www.centralsemi.com
相关型号:
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