CMLM0705TRLEADFREE [CENTRAL]
Transistor;
| 型号： | CMLM0705TRLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor 晶体 肖特基二极管 开关 小信号双极晶体管 光电二极管 |
| 文件： | 总2页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMLM0705
MULTI DISCRETE MODULE
SURFACE MOUNT
Central
™
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMLM0705 is
SILICON SWITCHING PNP TRANSISTOR
AND
a
™
Multi Discrete Module consisting of a single PNP
Transistor and a Schottky Diode packaged in a space
saving PICOmini™ SOT-563 case. This device is
designed for small signal general purpose applications
where size and operational efficiency are prime
requirements.
LOW V SILICON SCHOTTKY DIODE
F
TM
• Combination: Small Signal Switching PNP Transistor
and Low V Schottky Diode.
F
• Complementary Device: CMLM2205
SOT-563 CASE
MARKING CODE: C75
MAXIMUM RATINGS (SOT-563 Package): (T =25°C)
SYMBOL
UNITS
A
Power Dissipation
P
350
mW
D
Operating and Storage
Junction Temperature
T , T
stg
JA
SYMBOL
-65 to +150
357
°C
°C/W
J
Thermal Resistance
Θ
MAXIMUM RATINGS Q1: (T =25°C)
UNITS
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
90
60
6.0
600
V
V
CBO
CEO
EBO
V
I
mA
C
MAXIMUM RATINGS D1: (T =25°C)
SYMBOL
UNITS
A
Peak Repetitive Reverse Voltage
Continuous Forward Current
V
40
500
3.5
10
V
mA
A
RRM
I
F
Peak Repetitive Forward Current, tp ≤ 1ms
Forward Surge Current, tp=8ms
I
FRM
I
A
FSM
ELECTRICAL CHARACTERISTICS Q1: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
I
I
V
V
V
=50V
=50V, T =125°C
=30V, V =0.5V
BE
10
10
50
nA
µA
nA
V
V
V
V
V
V
V
CBO
CBO
CEV
CBO
CEO
CB
CB
CE
A
BV
BV
BV
I =10µA
90
60
5.0
115
C
I =10mA
C
I =10µA
EBO
E
V
V
V
V
I =150mA, I =15mA
0.113
0.280
0.2
0.7
1.3
2.6
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
B
B
B
I =500mA, I =50mA
C
I =150mA, I =15mA
C
I =500mA, I =50mA
C
h
h
h
h
h
V
=10V, I =0.1mA
100
100
100
100
75
205
110
CE
CE
CE
CE
CE
C
V
V
V
V
=10V, I =1.0mA
C
FE
FE
FE
FE
=10V, I =10mA
C
=10V, I =150mA
300
C
=10V, I =500mA
C
R0 (06-October 2004)
CMLM0705
MULTI DISCRETE MODULE
SURFACE MOUNT
TM
™
Central
Semiconductor Corp.
SILICON SWITCHING PNP TRANSISTOR AND
LOW V SILICON SCHOTTKY DIODE
F
ELECTRICAL CHARACTERISTICS Q1 (continued)
SYMBOL
TEST CONDITIONS
MIN
200
MAX
UNITS
MHz
pF
pF
ns
ns
ns
ns
ns
f
V
V
V
V
V
V
V
V
V
=20V, I =50mA, f=100MHz
T
CE
CB
BE
CC
CC
CC
CC
CC
CC
C
C
C
=10V, I =0, f=1.0MHz
8.0
30
45
10
40
100
80
30
ob
ib
E
=2.0V, I =0, f=1.0MHz
C
t
=30V, V =0.5V, I =150mA, I =15mA
BE B1
on
C
C
t
=30V, V =0.5V, I =150mA, I =15mA
BE B1
d
t
=30V, V =0.5V, I =150mA, I =15mA
r
BE B1
C
t
=6.0V, I =150mA, I =I =15mA
off
C
C
C
B1 B2
B1 B2
B1 B2
t
=6.0V, I =150mA, I =I =15mA
s
t
=6.0V, I =150mA, I =I =15mA
ns
f
ELECTRICAL CHARACTERISTICS D1 (T =25°C)
A
I
I
V = 10V
20
µA
µA
V
R
R
R
V = 30V
100
R
BV
I = 500µA
40
R
R
V
V
V
V
V
I = 100µA
0.13
0.21
0.27
0.35
0.47
50
V
F
F
F
F
F
F
I = 1.0mA
V
F
I = 10mA
V
F
I = 100mA
V
F
I = 500mA
R
V
F
C
V = 1.0V, f=1.0 MHz
pF
T
SOT-563 - MECHANICAL OUTLINE
D
E
E
A
6
5
4
B
G
F
1
2
3
C
H
R0
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
MARKING CODE: C75
3) CATHODE D1
4) ANODE D1
5) ANODE D1
6) COLLECTOR Q1
R0 (06-October 2004)
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