CMLM0705_10 [CENTRAL]
SURFACE MOUNT SILICON SWITCHING PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE; 表面贴装型硅开关PNP晶体管和低VF硅肖特基二极管
| 型号： | CMLM0705_10 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SURFACE MOUNT SILICON SWITCHING PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE |
| 文件： | 总2页 (文件大小：580K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMLM0705
MULTI DISCRETE MODULE
SURFACE MOUNT
™
www.centralsemi.com
SILICON SWITCHING PNP TRANSISTOR
AND
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM0705 is a
Multi Discrete Module™ consisting of a single PNP
Transistor and a Schottky Diode packaged in a space
saving PICOmini™ SOT-563 case. This device is
designed for small signal general purpose applications
where size and operational efficiency are prime
requirements.
LOW V SILICON SCHOTTKY DIODE
F
• Combination: Small Signal Switching PNP Transistor
and Low V Schottky Diode.
F
SOT-563 CASE
• Complementary Device: CMLM2205
MARKING CODE: C75
SYMBOL
MAXIMUM RATINGS - CASE: (T =25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
UNITS
mW
°C
A
P
T , T
350
-65 to +150
357
D
stg
J
Θ
°C/W
JA
SYMBOL
MAXIMUM RATINGS - Q1: (T =25°C)
UNITS
V
V
V
mA
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
90
60
6.0
600
CBO
CEO
EBO
Continuous Collector Current
I
C
MAXIMUM RATINGS - D1: (T =25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp≤1.0ms
Peak Forward Surge Current, tp=8.0ms
SYMBOL
UNITS
A
V
40
500
3.5
10
V
mA
A
RRM
F
I
I
FRM
I
A
FSM
ELECTRICAL CHARACTERISTICS - Q1: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
10
UNITS
nA
µA
nA
V
I
I
I
V
V
V
=50V
CBO
CBO
CEV
CB
CB
CE
=50V, T =125°C
10
A
=30V, V =0.5V
50
BE
BV
BV
BV
I =10µA
90
60
115
CBO
CEO
C
I =10mA
V
C
I =10µA
5.0
V
EBO
E
V
V
V
V
I =150mA, I =15mA
0.113
0.280
0.2
0.7
1.3
2.6
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
I =500mA, I =50mA
V
C
B
I =150mA, I =15mA
V
C
B
I =500mA, I =50mA
V
C
B
h
h
h
h
h
V
=10V, I =0.1mA
100
100
100
100
75
205
110
CE
CE
CE
CE
CE
C
V
V
V
V
=10V, I =1.0mA
C
FE
=10V, I =10mA
FE
C
=10V, I =150mA
300
FE
C
=10V, I =500mA
FE
C
R1 (18-January 2010)
CMLM0705
MULTI DISCRETE MODULE
SURFACE MOUNT
™
SILICON SWITCHING PNP TRANSISTOR
AND
LOW V SILICON SCHOTTKY DIODE
F
ELECTRICAL CHARACTERISTICS - Q1 - Continued:
SYMBOL TEST CONDITIONS
MIN
MAX
UNITS
MHz
pF
f
V
V
V
V
V
V
V
V
V
=20V, I =50mA, f=100MHz
200
T
CE
CB
BE
CC
CC
CC
CC
CC
CC
C
C
=10V, I =0, f=1.0MHz
8.0
30
ob
ib
E
C
=2.0V, I =0, f=1.0MHz
pF
C
t
t
t
t
t
t
=30V, V =0.5V, I =150mA, I =15mA
BE B1
45
ns
on
C
=30V, V =0.5V, I =150mA, I =15mA
10
ns
d
r
BE B1
C
=30V, V =0.5V, I =150mA, I =15mA
40
ns
BE B1
C
=6.0V, I =150mA, I =I =15mA
100
80
ns
off
s
C
B1 B2
=6.0V, I =150mA, I =I =15mA
ns
C
B1 B2
=6.0V, I =150mA, I =I =15mA
30
ns
f
C
B1 B2
ELECTRICAL CHARACTERISTICS - D1: (T =25°C)
A
I
I
V =10V
20
100
µA
µA
V
V
V
V
V
V
pF
R
R
R
V =30V
R
BV
I =500µA
40
R
R
V
V
V
V
V
I =100µA
0.13
0.21
0.27
0.35
0.47
50
F
F
F
F
F
F
I =1.0mA
F
I =10mA
F
I =100mA
F
I =500mA
F
C
V =1.0V, f=1.0MHz
T
R
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Cathode D1
4) Anode D1
5) Anode D1
6) Collector Q1
MARKING CODE: C75
R1 (18-January 2010)
www.centralsemi.com
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