CMLM2205TR [CENTRAL]
Small Signal Bipolar Transistor, 0.6A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PICOMINI-6;
| 型号： | CMLM2205TR |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Bipolar Transistor, 0.6A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PICOMINI-6 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：581K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMLM2205
MULTI DISCRETE MODULE
SURFACE MOUNT
™
www.centralsemi.com
SILICON SWITCHING NPN TRANSISTOR
AND
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM2205 is a
Multi Discrete Module™ consisting of a single NPN
Transistor and Schottky Diode packaged in a space
saving PICOmini™ SOT-563 case. This device is
designed for small signal general purpose applications
where size and operational efficiency are prime
requirements.
LOW V SILICON SCHOTTKY DIODE
F
• Combination: Small Signal Switching NPN Transistor
and Low V Schottky Diode.
F
SOT-563 CASE
• Complementary Device: CMLM0705
MARKING CODE: C22
MAXIMUM RATINGS - CASE: (T =25°C)
SYMBOL
UNITS
mW
°C
A
Power Dissipation
P
350
-65 to +150
357
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
J
stg
Θ
°C/W
JA
SYMBOL
MAXIMUM RATINGS - Q1: (T =25°C)
UNITS
V
V
V
mA
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
100
45
6.0
600
CBO
CEO
EBO
Continuous Collector Current
I
C
MAXIMUM RATINGS - D1: (T =25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp ≤1.0ms
Peak Forward Surge Current, tp=8.0ms
SYMBOL
UNITS
A
V
40
500
3.5
10
V
mA
A
RRM
F
I
I
FRM
I
A
FSM
ELECTRICAL CHARACTERISTICS - Q1: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
10
10
10
10
UNITS
nA
μA
nA
nA
V
V
V
V
V
I
I
I
I
V
V
V
V
=60V
=60V, T =125°C
=60V, V =3.0V
EB
=3.0V
CBO
CBO
CEV
EBO
CB
CB
CE
EB
A
BV
BV
BV
I =10μA
100
45
6.0
145
53
CBO
CEO
EBO
C
I =10mA
C
I =10μA
E
V
V
V
V
I =150mA, I =15mA
0.09
0.12
0.15
0.50
1.2
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
B
B
B
I =500mA, I =50mA
C
I =150mA, I =15mA
0.6
V
V
C
I =500mA, I =50mA
2.0
C
h
h
h
h
h
h
V
=10V, I =0.1mA
100
100
100
75
100
60
210
205
205
150
CE
CE
CE
CE
CE
CE
C
V
V
V
V
V
=10V, I =1.0mA
C
FE
FE
FE
FE
=10V, I =10mA
C
=1.0V, I =150mA
C
=10V, I =150mA
300
C
=10V, I =500mA
130
FE
C
R2 (18-January 2010)
CMLM2205
MULTI DISCRETE MODULE
SURFACE MOUNT
™
SILICON SWITCHING NPN TRANSISTOR
AND
LOW V SILICON SCHOTTKY DIODE
F
ELECTRICAL CHARACTERISTICS - Q1 - Continued: (T =25°C)
A
SYMBOL
TEST CONDITIONS
MIN
300
MAX
UNITS
MHz
pF
pF
dB
ns
ns
ns
ns
f
C
C
V
V
V
V
V
V
V
V
=20V, I =20mA, f=100MHz
T
ob
ib
CE
CB
EB
CE
CC
CC
CC
CC
C
=10V, I =0, f=1.0MHz
8.0
25
4.0
10
25
225
60
E
=0.5V, I =0, f=1.0MHz
C
NF
=10V, I =100mA, R =1.0kΩ, f=1.0kHz
=30V, V =0.5, I =150mA, I =15mA
BE B1
=30V, V =0.5, I =150mA, I =15mA
C
S
t
t
t
t
d
r
s
f
C
C
BE B1
=30V, I =150mA, I =I 15mA
C
B1 B2
=30V, I =150mA, I =I =15mA
B1 B2
C
ELECTRICAL CHARACTERISTICS - D1: (T =25°C)
A
I
I
V =10V
20
100
μA
μA
V
V
V
V
V
V
pF
R
R
R
V =30V
R
BV
I =500μA
40
R
R
V
V
V
V
V
I =100μA
0.13
0.21
0.27
0.35
0.47
50
F
F
F
F
F
F
I =1.0mA
F
I =10mA
F
I =100mA
F
I =500mA
F
C
V =1.0V, f=1.0MHz
T
R
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Cathode D1
4) Anode D1
5) Anode D1
6) Collector Q1
MARKING CODE: C22
R2 (18-January 2010)
www.centralsemi.com
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