CMLM3405 [CENTRAL]
MULTI DISCRETE MODULE⑩ SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE; 多离散MODULE⑩表面安装高电流低VCE （ SAT）型硅NPN晶体管和低VF硅肖特基二极管
| 型号： | CMLM3405 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | MULTI DISCRETE MODULE⑩ SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE |
| 文件： | 总2页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMLM3405
™
Central
MULTI DISCRETE MODULE
SURFACE MOUNT
Semiconductor Corp.
HIGH CURRENT
DESCRIPTION:
LOW V
SILICON NPN TRANSISTOR
AND
LOW V SILICON SCHOTTKY DIODE
CE (SAT)
The Central Semiconductor CMLM3405 is a single
NPN Transistor and Schottky Diode packaged in a
space saving SOT-563 case and designed for small
signal general purpose applications where size and
operational efficiency are prime requirements.
F
TM
• Complementary Device: CMLM7405
• Combination High Current Low V
CE (SAT)
Transistor and Low V Schottky Diode.
F
MARKING CODE: C53
SOT-563 CASE
MAXIMUM RATINGS (SOT-563 Package): (T =25°C)
Power Dissipation
Operating and Storage
Junction Temperature
SYMBOL
UNITS
mW
A
P
350
D
T , T
stg
-65 to +150
357
°C
J
Thermal Resistance
Θ
°C/W
JA
MAXIMUM RATINGS Q1: (T =25°C)
SYMBOL
UNITS
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
40
25
6.0
1.0
1.5
V
V
V
A
A
CBO
CEO
EBO
I
C
Collector Current (Peak)
I
CM
MAXIMUM RATINGS D1: (T =25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp ≤ 1ms
Forward Surge Current, tp=8ms
SYMBOL
UNITS
A
V
40
500
3.5
10
V
mA
A
RRM
F
I
I
FRM
I
A
FSM
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
nA
nA
V
I
V
V
=40V
100
100
CBO
CB
EB
I
=6.0V
EBO
BV
I =100µA
40
25
CBO
C
BV
I =10mA
C
V
CEO
BV
I =100µA
6.0
V
EBO
E
V
I =50mA, I =5.0mA
20
35
50
75
mV
mV
mV
mV
mV
mV
V
CE(SAT)
C
B
V
I =100mA, I =10mA
CE(SAT)
C B
V
I =200mA, I =20mA
75
150
250
400
450
1.1
0.9
CE(SAT)
C
B
V
I =500mA, I =50mA
130
200
250
CE(SAT)
C
B
V
I =800mA, I =80mA
CE(SAT)
C B
V
I =1.0A, I =100mA
C B
CE(SAT)
V
I =800mA, I =80mA
BE(SAT)
C
B
V
V
=1.0V, I =10mA
C
V
BE(ON)
CE
R0 (23-March 2005)
CMLM3405
TM
™
MULTI DISCRETE MODULE
SURFACE MOUNT
Central
HIGH CURRENT
Semiconductor Corp.
LOW V
SILICON NPN TRANSISTOR
AND
CE (SAT)
LOW V SILICON SCHOTTKY DIODE
F
ELECTRICAL CHARACTERISTICS Q1 (continued)
SYMBOL
TEST CONDITIONS
MIN
100
100
100
50
MAX
UNITS
h
V
V
V
V
V
V
=1.0V, I =10mA
FE
CE
CE
CE
CE
CE
CB
C
h
=1.0V, I =100mA
C
300
FE
h
=1.0V, I =500mA
FE
C
h
=1.0V, I =1.0A
C
FE
f
=10V, I =50mA, f=100MHz
100
MHz
pF
T
C
C
=10V, I =0, f=1.0MHz
E
10
ob
ELECTRICAL CHARACTERISTICS D1 (T =25°C)
A
I
I
V = 10V
20
µA
µA
V
R
R
R
V = 30V
R
100
BV
I = 500µA
40
R
R
V
I = 100µA
F
0.13
0.21
0.27
0.35
0.47
50
V
F
V
F
V
I = 1.0mA
V
F
I = 10mA
F
V
F
V
F
V
I = 100mA
V
F
I = 500mA
F
V
F
C
T
V = 1.0V, f=1.0 MHz
pF
R
SOT-563 - MECHANICAL OUTLINE
D
E
E
A
6
5
4
B
G
F
1
2
3
C
H
R0
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) CATHODE D1
4) ANODE D1
5) ANODE D1
6) COLLECTOR Q1
MARKING CODE: C53
R0 (23-March 2005)
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