CMLM0708ABK [CENTRAL]
Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6;
| 型号： | CMLM0708ABK |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：584K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMLM0708A
™
MULTI DISCRETE MODULE
www.centralsemi.com
SURFACE MOUNT
N-CHANNEL AND P-CHANNEL
COMPLEMENTARY MOSFETS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM0708A is a
Multi Discrete Module™ consisting of complementary
N-Channel and P-Channel Enhancement-mode
MOSFETS packaged in a space saving PICOmini™
SOT-563 case. This device is designed for small
signal general purpose applications where size and
operational efficiency are prime requirements.
MARKING CODE: C78
SOT-563 CASE
APPLICATIONS:
• Switching Circuits
• DC/DC Converters
• Battery Powered Portable Equipment including Cell
Phones, Digital Cameras, Pagers, PDAs, Notebook PCs, etc.
FEATURES:
• Dual Complementary MOSFETS
• Low r (3Ω MAX @ V =5.0V)
DS(ON)
GS
• Small SOT-563 Surface Mount Package
MAXIMUM RATINGS - CASE: (T =25°C)
SYMBOL
UNITS
mW
mW
mW
°C
A
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
P
P
P
T , T
Θ
350
300
150
D
D
D
-65 to +150
357
J
stg
°C/W
JA
MAXIMUM RATINGS: (T =25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
SYMBOL
N-Ch (Q1)
60
P-Ch (Q2)
50
UNITS
V
V
A
V
V
V
I
I
DS
DG
GS
D
S
60
40
280
280
1.5
50
20
280
280
1.5
V
mA
mA
A
I
I
DM
1.5
1.5
A
SM
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
N-Ch (Q1)
P-Ch (Q2)
SYMBOL
TEST CONDITIONS
MIN
-
-
-
-
MAX
100
1.0
-
MIN
-
-
-
-
MAX
100
-
1.0
-
500
-
-
-
UNITS
nA
μA
μA
μA
I
I
I
I
I
I
I
, I
V
V
V
V
V
V
V
V
=20V, V =0
GSSF GSSR
GS
DS
DS
DS
DS
GS
GS
GS
DS
(N-Ch)
(P-Ch)
(N-Ch)
(P-Ch)
=60V, V =0
DSS
DSS
DSS
DSS
GS
=50V, V =0
GS
=60V, V =0, T =125°C
500
GS
J
J
=50V, V =0, T =125°C
-
-
-
-
-
-
-
μA
GS
(N-Ch)
(P-Ch)
=10V, V =10V
500
-
60
mA
mA
V
D(ON)
D(ON)
DS
=10V, V =10V
DS
500
50
BV
=0, I =10μA
DSS
D
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
R1 (18-January 2010)
CMLM0708A
™
MULTI DISCRETE MODULE
SURFACE MOUNT
N-CHANNEL AND P-CHANNEL
COMPLEMENTARY MOSFETS
ELECTRICAL CHARACTERISTICS - Continued:
N-Ch (Q1)
P-Ch (Q2)
MIN MAX
1.0 2.5
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=V , I =250μA
1.0
2.5
GS(th)
DS GS
D
=10V, I =500mA
-
-
1.0
0.15
1.2
-
-
1.5
0.15
-
V
V
DS(ON)
DS(ON)
GS
GS
GS
GS
GS
GS
GS
GS
DS
D
=5.0V, I =50mA
-
D
(N-Ch)
=0, I =400mA
-
-
V
SD
SD
S
(P-Ch)
=0, I =115mA
-
-
1.3
2.5
4.0
3.0
5.0
-
V
S
r
r
r
r
=10V, I =500mA
-
2.0
3.5
3.0
5.0
-
-
ꢀ
DS(ON)
DS(ON)
DS(ON)
DS(ON)
D
=10V, I =500mA, T =125°C
-
-
ꢀ
D
J
=5.0V, I =50mA
-
-
ꢀ
D
=5.0V, I =50mA, T =125°C
-
-
ꢀ
D
J
,
g
g
(N-Ch)
=10V I =200mA
80
-
-
mS
mS
pF
pF
pF
FS
D
(P-Ch)
=10V, I =200mA
-
200
-
FS
DS
DS
DS
DS
DD
D
C
C
C
=25V, V =0, f=1.0MHz
GS
-
5.0
50
25
-
-
-
7.0
70
15
rss
iss
=25V, V =0, f=1.0MHz
-
GS
=25V, V =0, f=1.0MHz
GS
-
oss
/ t
t
=30V, V =10V, I =200mA
on off
GS
D
R =25Ω, R =150Ω
-
20
-
20
ns
G
L
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Drain Q2
4) Gate Q2
5) Source Q2
6) Drain Q1
MARKING CODE: C78
R1 (18-January 2010)
www.centralsemi.com
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