2N2904ALEADFREE [CENTRAL]
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN;
| 型号： | 2N2904ALEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN 开关 晶体管 |
| 文件： | 总2页 (文件大小：502K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N2904 2N2904A
2N2905 2N2905A
www.centralsemi.com
DESCRIPTION:
PNP SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR 2N2904, 2N2905
series types are PNP silicon transistors manufactured
by the epitaxial planar process, designed for small
signal, general purpose and switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
2N2904
2N2905
60
2N2904A
2N2905A
60
A
SYMBOL
UNITS
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
V
CBO
CEO
EBO
V
V
40
60
V
V
5.0
0.6
0.6
3.0
I
A
C
P
W
W
°C
D
D
Power Dissipation (T =25°C)
P
C
Operating and Storage Junction Temperature
T , T
-65 to +200
J
stg
2N2904
2N2905
ELECTRICAL CHARACTERISTICS: (T =25°C)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
V
=50V
-
20
-
10
nA
CBO
CEV
CB
CE
I
V
=30V, VEB=0.5V
-
-
-
-
50
-
nA
V
BV
BV
BV
I =10μA
60
40
5.0
-
60
60
5.0
-
CBO
C
I =10mA
-
-
V
CEO
C
I =10μA
-
-
V
EBO
E
V
V
V
V
I =150mA, I =15mA
0.4
1.6
1.3
2.6
0.4
1.6
1.3
2.6
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
C
B
I =500mA, I =50mA
-
-
V
C
B
I =150mA, I =15mA
-
-
V
C
B
I =500mA, I =50mA
-
-
V
C
B
2N2904
2N2904A
2N2905
2N2905A
MIN MAX
MIN
20
=10V, I =100μA (2N2904A, 2N2905A) 40
MAX
-
h
h
h
h
h
h
h
h
h
V
=10V, I =100μA (2N2904, 2N2905)
35
-
FE
FE
FE
FE
FE
FE
FE
FE
FE
CE
CE
CE
CE
CE
CE
CE
CE
CE
C
V
V
V
V
V
V
V
V
-
75
-
C
=10V, I =1.0mA (2N2904, 2N2905)
25
-
50
-
C
=10V, I =1.0mA (2N2904A, 2N2905A) 40
-
100
75
-
C
=10V, I =10mA (2N2904, 2N2905)
35
-
-
C
=10V, I =10mA (2N2904A, 2N2905A) 40
-
100
100
30
-
C
=10V, I =150mA
40
20
120
300
C
=10V, I =500mA (2N2904, 2N2905)
-
-
-
-
C
=10V, I =500mA (2N2904A, 2N2905A) 40
50
C
R1 (11-June 2012)
2N2904 2N2904A
2N2905 2N2905A
PNP SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
f
V
V
V
V
=20V, I =50mA, f=100MHz
200
MHz
T
CE
CB
CC
CC
C
C
=10V, f=100kHz
8.0
45
pF
ns
ns
ob
t
t
=30V, I =150mA, I =15mA
C B
on
off
=6.0V, I =150mA, I =I =15mA
180
C
B1 B2
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R1 (11-June 2012)
www.centralsemi.com
相关型号：
2N2904E3
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, ROHS COMPLIANT, HERMETIC SEALED, TO-39, 3 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明