2N2904JX [RAYTHEON]
Silicon PNP Transistor; 硅PNP晶体管
| 型号： | 2N2904JX |
| 厂家： | 
RAYTHEON COMPANY |
| 描述： | Silicon PNP Transistor |
| 文件： | 总2页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N2904
Data Sheet
Description
Applications
• General purpose
• Low power
Semicoa Semiconductors offers:
• PNP silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2904J)
• JANTX level (2N2904JX)
• JANTXV level (2N2904JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 0600
• Reference document:
MIL-PRF-19500/290
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
VCEO
VCBO
Rating
40
Unit
Volts
Volts
60
Volts
mA
VEBO
IC
5
Collector Current, Continuous
600
W
Power Dissipation, TA = 25 °C
Derate above 60 °C
0.8
PT
PT
5.7
mW/°C
W
Power Dissipation, TC = 25 °C
3.0
17.2
mW/°C
°C/W
Derate above 25 °C
Thermal Resistance
175
RθJA
TJ
°C
°C
Operating Junction Temperature
Storage Temperature
-65 to +200
-65 to +200
TSTG
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. H
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 1
www.SEMICOA.com
2N2904
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
V(BR)CEO IC = 10 mA
Test Conditions
Min
40
Typ
Max
Units
Volts
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Emitter-Base Cutoff Current
µA
nA
µA
µA
µA
nA
ICBO1
ICBO2
ICBO3
ICES
VCB = 60 Volts
10
20
20
1
VCB = 50 Volts
VCB = 50 Volts, TA = 150OC
VCE = 40 Volts
IEBO1
IEBO2
VEB = 5 Volts
10
50
VEB = 3.5 Volts
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
On Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
TA = -55OC
20
25
35
40
20
15
175
120
DC Current Gain
VBEsat1
VBEsat2
VCEsat1
VCEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
1.3
2.6
0.4
1.6
Base-Emitter Saturation Voltage
Volts
Volts
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Symbol
Test Conditions
Min
Typ
Max
Units
VCE = 20 Volts, IC = 50 mA,
|hFE|
2.0
f = 100 MHz
CE = 10 Volts, IC = 1 mA,
f = 1 kHz
V
hFE
25
V
CB = 10 Volts, IC = 0 mA,
pF
pF
Open Circuit Output Capacitance
COBO
CIBO
8
100 kHZ < f < 1 MHz
VEB = 2.0 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
Open Circuit Input Capacitance
30
Switching Characteristics
Saturated Turn-On Time
Saturated Turn-Off Time
ton
ns
ns
45
300
toff
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. H
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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