2N2904A_09 [SEME-LAB]
SILICON PLANAR EPITAXIAL PNP TRANSISTOR; 硅平面外延PNP晶体管
| 型号： | 2N2904A_09 |
| 厂家： | 
SEME LAB |
| 描述： | SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
| 文件： | 总3页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N2904A
•
•
•
Low Power
Hermetic TO-39 Metal package.
Ideally suited for High Speed Switching
and General Purpose Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
A
V
V
V
I
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
-60V
CBO
CEO
EBO
-60V
-5V
Continuous Collector Current
Total Power Dissipation at
-600mA
C
P
T = 25°C
A
600mW
D
Derate Above 25°C
3.43mW/°C
3W
P
T = 25°C
C
Total Power Dissipation at
D
Derate Above 25°C
17.2mW/°C
-65 to +200°C
-65 to +200°C
T
T
Junction Temperature Range
Storage Temperature Range
J
stg
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ. Max. Units
R
Thermal Resistance, Junction To Ambient
Thermal Resistance, Junction To Case
291.7
58.3
°C/W
°C/W
θJA
R
θJC
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8076
Issue 1
Page 1 of 3
Website: http://www.semelab-tt.com
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N2904A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Symbols
Parameters
Test Conditions
Min. Typ
Max. Units
(1)
Collector-Emitter
Breakdown Voltage
Collector-Base
V
I
I
= -10mA
= -10µA
I = 0
B
-60
(BR)CEO
C
C
V
I = 0
E
V
-60
-5
(BR)CBO
Breakdown Voltage
Emitter-Base Breakdown
Voltage
V
I = -10µA
I = 0
C
(BR)EBO
E
I
V
V
= -30V
= -50V
V
= -0.5V
Collector Cut-Off Current
-50
-0.01
-10
nA
µA
CEX
CE
CB
BE
I = 0
E
I
Collector Cut-Off Current
CBO
T
= 150°C
A
I
= -150mA
= -500mA
= -150mA
= -500mA
= -0.1mA
= -1.0mA
= -10mA
I = -15mA
B
-0.4
-1.6
-1.3
-2.6
C
(1)
Collector-Emitter Saturation
Voltage
V
CE(sat)
I
I
I
I
I
I
I
I
I = -50mA
B
C
C
C
C
C
C
C
C
V
I = -15mA
B
(1)
Base-Emitter Saturation
Voltage
V
BE(sat)
I = -50mA
B
V
V
V
V
V
= -10V
= -10V
= -10V
= -10V
= -10V
40
40
40
40
40
CE
CE
CE
CE
CE
(1)
Forward-current transfer
ratio
h
FE
= -150mA
= -500mA
120
DYNAMIC CHARACTERISTICS
I
= -50mA
V
= -20V
C
CE
f
Transition Frequency
Output Capacitance
Input Capacitance
Turn-On Time
170
MHz
pF
T
f = 100MHz
= -10V
V
I = 0
E
CB
f = 1.0MHz
= -2V
C
C
t
8
obo
ibo
V
I = 0
C
EB
f = 1.0MHz
30
I
I
I
I
= -150mA
= -15mA
V
= -30V
C
CC
CC
45
on
B1
ns
= -150mA
V
= -30V
C
t
Turn-Off Time
300
off
= - I = -15mA
B2
B1
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
Document Number 8076
Issue 1
Page 2 of 3
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N2904A
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
0.89
max.
(0.035)
12.70
(0.500)
0.41 (0.016)
0.53 (0.021)
dia.
min.
5.08 (0.200)
typ.
2.54
(0.100)
2
1
3
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
45°
TO-39 (TO-205AD) METAL PACKAGE
Underside View
Pin 1 - Emitter
Pin 2 - Base
Pin 3 - Collector
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8076
Issue 1
Page 3 of 3
Website: http://www.semelab-tt.com
相关型号：
2N2904E3
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, ROHS COMPLIANT, HERMETIC SEALED, TO-39, 3 PIN
MICROSEMI
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