2N2904E [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING); 外延平面NPN晶体管（通用，切换）
| 型号： | 2N2904E |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
| 文件： | 总4页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
2N2904E
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
B
SWITCHING APPLICATION.
B1
FEATURES
1
2
3
6
5
DIM MILLIMETERS
_
Low Leakage Current
A
A1
B
1.6+0.05
_
1.0+0.05
: ICEX=50nA(Max.), IBL=50nA(Max.)
@VCE=30V, VEB=3V.
_
1.6+0.05
_
1.2+0.05
B1
C
0.50
_
0.2+0.05
4
Excellent DC Current Gain Linearity.
Low Saturation Voltage
D
H
J
_
0.5+0.05
_
0.12+0.05
P
P
P
5
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
Low Collector Output Capacitance
: Cob=4pF(Max.) @VCB=5V.
1. Q EMITTER
1
2. Q BASE
1
3. Q BASE
2
4. Q COLLECTOR
2
5. Q EMITTER
2
6. Q COLLECTOR
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
)
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
TES6
60
40
V
6
V
EQUIVALENT CIRCUIT (TOP VIEW)
200
mA
mA
mW
6
5
4
IB
Base Current
50
PC *
Tj
Collector Power Dissipation
Junction Temperature
200
150
Q1
Q2
Tstg
Storage Temperature Range
* Total Rating
-55 150
1
2
3
Marking
Type Name
Z C
2002. 9. 17
Revision No : 0
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2N2904E
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICEX
TEST CONDITION
MIN.
-
TYP.
MAX.
50
50
-
UNIT
nA
nA
V
VCE=30V, VEB=3V
VCE=30V, VEB=3V
IC=10 A, IE=0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IBL
Base Cut-off Current
-
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE(1)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
60
40
6.0
40
70
100
60
30
-
IC=1mA, IB=0
-
V
IE=10 A, IC=0
-
V
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
-
hFE(2)
-
hFE(3)
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, IE=0, f=1MHz
VBE=0.5V, IC=0, f=1MHz
DC Current Gain
*
300
-
hFE(4)
hFE(5)
-
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
1
2
1
2
0.2
0.3
0.85
0.95
-
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
*
*
V
V
-
0.65
-
Transition Frequency
300
-
MHz
pF
Cob
Collector Output Capacitance
Input Capacitance
4.0
8.0
10
8.0
400
40
Cib
-
pF
hie
Input Impedance
1.0
0.5
100
1.0
k
Voltage Feedback Ratio
Small-Signal Current Gain
Collector Output Admittance
x10-4
hre
VCE=10V, IC=1mA, f=1kHz
hfe
hoe
VCE=5V, IC=0.1mA Rg=1k
f=10Hz 15.7kHz
,
Noise Figure
NF
td
-
-
5.0
dB
V
out
Delay Time
-
-
35
10kΩ
C
V
in
Total< 4pF
300ns
V
=3.0V
CC
10.9V
-0.5V
tr
tstg
tf
Rise Time
Switching Time
-
-
-
-
-
-
35
200
50
0
t ,t < 1ns, Du=2%
r
f
nS
V
out
Storage Time
10kΩ
V
C
in
Total< 4pF
1N916
or equiv.
20µs
V
=3.0V
CC
Fall Time
10.9V
-9.1V
0
t ,t < 1ns, Du=2%
r
f
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
2002. 9. 17
Revision No : 0
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2N2904E
I C - VCE
hFE - I C
100
80
60
40
20
0
1k
1
COMMON EMITTER
Ta=25 C
COMMON EMITTER
=1V
0.8
V
CE
500
300
0.7
0.6
0.5
Ta=125 C
Ta=25 C
0.4
0.3
Ta=-55 C
100
0.2
50
30
I
=0.1mA
B
10
0.1
0.3
1
3
10
30
100 300
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE V
(V)
COLLECTOR CURRENT I (mA)
C
CE
VCE(sat) - IC
VBE(sat) - I C
10
1
COMMON EMITTER
/I =10
COMMON EMITTER
/I =10
I
I
C
B
C
E
5
3
0.5
0.3
Ta=-55 C
Ta=125 C
1
0.1
0.5
0.3
Ta=25 C
Ta=-55 C
0.05
0.03
Ta=25 C
Ta=125 C
0.1
0.01
0.1
0.3
1
3
10
30
100 300
0.1
0.3
1
3
10
30
C
100
(mA)
300
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I
VCE - IB
I C - VBE
1.0
0.8
0.6
0.4
0.2
0
200
160
120
80
COMMON EMITTER
=1V
V
CE
40
COMMON
EMITTER
Ta=25 C
0
0
0.4
0.8
1.2
1.6
0.001
0.01
0.1
1
10
BASE-EMITTER VOLTAGE V
BE
(V)
BASE CURRENT I (mA)
B
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Revision No : 0
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2N2904E
Pc - Ta
Cob - VCB , Cib - VEB
250
200
150
100
50
50
30
f=1MHz
Ta=25 C
10
C
C
ib
5
3
ob
1
0.5
0
0.1
0.3
1
3
10
30
0
25
50
75
100
125
150
REVERSE VOLTAGE V
V
(V)
(V)
AMBIENT TEMPERATURE Ta ( C)
CB
EB
2002. 9. 17
Revision No : 0
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